JP2021141154A - ウエハ剥離装置及びウエハ剥離方法 - Google Patents
ウエハ剥離装置及びウエハ剥離方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims abstract description 203
- 230000007246 mechanism Effects 0.000 claims description 39
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- 230000002093 peripheral effect Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000009423 ventilation Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
- B65G47/74—Feeding, transfer, or discharging devices of particular kinds or types
- B65G47/90—Devices for picking-up and depositing articles or materials
- B65G47/91—Devices for picking-up and depositing articles or materials incorporating pneumatic, e.g. suction, grippers
- B65G47/918—Devices for picking-up and depositing articles or materials incorporating pneumatic, e.g. suction, grippers with at least two picking-up heads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
(付記1)
2つのウエハが貼り合わされて構成される貼合ウエハを支持可能な上面を有するウエハ支持部と、
前記ウエハ支持部の外側に配置され、前記ウエハ支持部に支持される前記貼合ウエハの貼合部に対して進退可能なアーム部と、
前記アーム部の先端に設けられ、前記上面と交差する方向に膨出可能な膨出部と
を備える、ウエハ剥離装置。
(付記2)
前記膨出部の内部に流体を供給し、当該流体により前記膨出部を膨出させる流体制御機構を更に備える、付記1に記載のウエハ剥離装置。
(付記3)
前記アーム部が前記膨出部を膨出可能に保持する保持部を更に備える、付記1又は2に記載のウエハ剥離装置。
(付記4)
前記ウエハ支持部に支持される前記貼合ウエハの上面に吸着可能な吸着ピンを更に備える、付記1から3のいずれか一項に記載のウエハ剥離装置。
(付記5)
前記吸着ピンを上方に移動可能な吸着ピン駆動部を更に備える、付記4に記載のウエハ剥離装置。
(付記6)
前記アーム部の上下位置を調整可能なアーム部駆動部を更に備える、付記1から5のいずれか一項に記載のウエハ剥離装置。
(付記7)
2つのウエハが貼り合わされて構成される貼合ウエハを支持可能な上面を有するウエハ支持部で当該貼合ウエハを支持し、
前記ウエハ支持部に支持される前記貼合ウエハの貼合部に、所定のアーム部の先端部を挿入し、
前記先端部に設けられる膨出部を、前記上面と交差する方向に膨出させることを含む、ウエハ剥離方法。
(付記8)
前記膨出部が、流体の供給により膨出する、付記7に記載のウエハ剥離方法。
(付記9)
前記膨出部の膨出によって分離する、前記貼合ウエハを構成する2つのウエハのうちの一方を吸着することを更に含む、付記7又は8に記載のウエハ剥離方法。
(付記10)
前記先端部の前記貼合部への挿入に先立って、前記先端部と前記貼合部との位置合わせが行われる、付記7から9のいずれか一項に記載のウエハ剥離方法。
Claims (5)
- 2つのウエハが貼り合わされて構成される貼合ウエハを支持可能な上面を有するウエハ支持部と、
前記ウエハ支持部の外側に配置され、前記ウエハ支持部に支持される前記貼合ウエハの貼合部に対して進退可能なアーム部と、
前記アーム部の先端に設けられ、前記上面と交差する方向に膨出可能な膨出部と
を備える、ウエハ剥離装置。 - 前記膨出部の内部に流体を供給し、当該流体により前記膨出部を膨出させる流体制御機構を更に備える、請求項1に記載のウエハ剥離装置。
- 前記アーム部が前記膨出部を膨出可能に保持する保持部を更に備える、請求項1又は2に記載のウエハ剥離装置。
- 2つのウエハが貼り合わされて構成される貼合ウエハを支持可能な上面を有するウエハ支持部で当該貼合ウエハを支持し、
前記ウエハ支持部に支持される前記貼合ウエハの貼合部に、所定のアーム部の先端部を挿入し、
前記先端部に設けられる膨出部を、前記上面と交差する方向に膨出させることを含む、ウエハ剥離方法。 - 前記膨出部が、流体の供給により膨出する、請求項4に記載のウエハ剥離方法。
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JP2020036678A JP7362515B2 (ja) | 2020-03-04 | 2020-03-04 | ウエハ剥離装置及びウエハ剥離方法 |
US16/931,625 US11551934B2 (en) | 2020-03-04 | 2020-07-17 | Wafer separating method |
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JP2020036678A JP7362515B2 (ja) | 2020-03-04 | 2020-03-04 | ウエハ剥離装置及びウエハ剥離方法 |
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JP7362515B2 JP7362515B2 (ja) | 2023-10-17 |
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JP (1) | JP7362515B2 (ja) |
Families Citing this family (1)
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CN117446494B (zh) * | 2023-12-25 | 2024-04-12 | 常州铭赛机器人科技股份有限公司 | 双工位上料装置及上料方法 |
Family Cites Families (14)
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JPH09263500A (ja) * | 1996-01-22 | 1997-10-07 | Komatsu Electron Metals Co Ltd | 貼り合わせsoiウェーハの剥がし治具 |
FR2752332B1 (fr) * | 1996-08-12 | 1998-09-11 | Commissariat Energie Atomique | Dispositif de decollement de plaquettes et procede de mise en oeuvre de ce dispositif |
JP2000077286A (ja) | 1998-09-02 | 2000-03-14 | Canon Inc | 試料の分離装置及び分理方法並びに基板の製造方法 |
JP2002075917A (ja) * | 2000-08-25 | 2002-03-15 | Canon Inc | 試料の分離装置及び分離方法 |
JP5080200B2 (ja) | 2007-10-22 | 2012-11-21 | リンテック株式会社 | 脆質部材の処理方法および該方法に用いられる粘着シート |
JP2009214485A (ja) | 2008-03-12 | 2009-09-24 | Fujifilm Corp | 基板剥離装置及び基板剥離方法 |
JP2012204709A (ja) | 2011-03-28 | 2012-10-22 | Okamoto Machine Tool Works Ltd | 半導体基板保持用のパッドおよびそれを用いて半導体基板を搬送する方法 |
FR2995441B1 (fr) | 2012-09-07 | 2015-11-06 | Soitec Silicon On Insulator | Dispositif de separation de deux substrats |
JP5875962B2 (ja) | 2012-09-19 | 2016-03-02 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
JP6076856B2 (ja) | 2013-08-09 | 2017-02-08 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
JP6518405B2 (ja) | 2014-03-28 | 2019-05-22 | 株式会社東京精密 | 半導体製造装置及び半導体の製造方法 |
JP6283573B2 (ja) | 2014-06-03 | 2018-02-21 | 東京エレクトロン株式会社 | 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体 |
CN104979262B (zh) | 2015-05-14 | 2020-09-22 | 浙江中纳晶微电子科技有限公司 | 一种晶圆分离的方法 |
JP6695227B2 (ja) | 2016-07-19 | 2020-05-20 | 東京応化工業株式会社 | 支持体分離装置および支持体分離方法 |
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- 2020-03-04 JP JP2020036678A patent/JP7362515B2/ja active Active
- 2020-07-17 US US16/931,625 patent/US11551934B2/en active Active
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JP7362515B2 (ja) | 2023-10-17 |
US20210276815A1 (en) | 2021-09-09 |
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