JP2021065098A - 高電圧電力モジュール - Google Patents
高電圧電力モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 135
- 238000007639 printing Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- RIBGNAJQTOXRDK-UHFFFAOYSA-N 1,3-dichloro-5-(3-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C=C(Cl)C=C(Cl)C=2)=C1 RIBGNAJQTOXRDK-UHFFFAOYSA-N 0.000 abstract description 13
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- 230000006872 improvement Effects 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- 239000004593 Epoxy Substances 0.000 description 1
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- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
Description
[0001]本発明は、海軍研究事務所によって授与された契約番号N00014−15−C−0051の下で政府資金を用いて行われた。米国政府は本発明に一定の権利を有する。
パが、第1の電力半導体ダイの少なくとも1つの接点と、第2の電力半導体ダイの少なくとも1つの接点との間に結合され、したがって、取外し可能なジャンパを設けたとき、電力モジュールは、第1の機能を提供するように構成され、取外し可能なジャンパを取り外したとき、電力モジュールは、第2の機能を提供するように構成される。取外し可能なジャンパを介して第1の電力半導体ダイと第2の電力半導体ダイとを接続することにより、電力モジュールを再構成することが可能になり、したがって、電力モジュールは、電力変換システムにおいて様々な機能を果たすことができる。さらに、取外し可能なジャンパを介して第1の電力半導体ダイと第2の電力半導体ダイとを接続することにより、第1のサブモジュールと第2のサブモジュールとを独立して試験することが可能になる。
電経路は、ゲート制御ループを画定する。ゲート制御ループのインダクタンスは、いくつかの実施形態においては約15nH未満でよいが、わずか約1nHまででよい。次いで、ゲート制御ループのインダクタンスを低減することにより、電力モジュールにおける干渉および損失が低減し、それによって、その性能が改善される。
[0018]本明細書に組み込まれており、本明細書の一部を形成する添付の図面の図は、本開示のいくつかの態様を示し、説明とともに、本開示の原理を明らかにする働きをする。
over)」に延びると称されるとき、介在要素は何も存在しない。要素が別の要素に「接続される(connected)」、または別の要素に「結合される(coupled)」と称されるとき、それは他の要素に直接接続し、または結合することができ、または介在要素が存在してよいことも理解されよう。対照的に、要素が別の要素に「直接接続される(directly connected)」、または「直接結合される(directly coupled)」と称されるとき、介在要素は何も存在しない。
を限定することが意図されていない。本明細書では、「1つの(a)」、「1つの(an)」、および「その(the)」という単数形は、文脈が明確に他を指示していない限り、複数形も含むことが意図されている。「備える(comprises)」、「備える(comprising)」、「含む(includes)」、および/または「含む(including)」という用語は、本明細書に使用されたとき、記載された特徴、整数、ステップ、動作、要素、および/または構成部品の存在を明記するが、1つまたは複数の他の特徴、整数、ステップ、動作、要素、構成部品、および/またはそれらの群の存在または追加を除外しないことがさらに理解されよう。
8の電力半導体ダイ34の代わりに、本開示の原理から逸脱することなく、32、24、9つ、6つ、または3つの電力半導体ダイ34など、任意の数の電力半導体ダイ34を使用することができる。
0から取り外された特定のサブモジュール48を示す。図示するように、ボルト締めされたコネクタ28Aは、電源基板40に結合され、筐体12に設けたいくつかの開口部を貫通して延びる。次いで、電源基板40は、基板50の上に配置される。ガスケット52が、サブモジュール48を囲み、それを筐体12に対して密封し、したがって、シリコンなどの絶縁ポッティング材、または誘電性流体が筐体12の内側に密封される。これにより、ポッティングの前に硬化を必要とする従来のエポキシ工程と比較したとき、サブモジュール48を密封する際の時間が節約され得る。いくつかの相互接続PCBコネクタ54は、図示するように、相互接続PCB36を所定位置に保持する。電源基板40と、基板50と、各サブモジュール48の特定のレイアウトにより、モジュールをハーフブリッジ構成で使用したとき、スイッチ位置ごとに約0.026°C/W未満の熱抵抗(RjC)が可能になる。
請求の範囲内で検討される。
Claims (20)
- 第1の電力半導体ダイを備える第1のサブモジュールと、
第2の電力半導体ダイを備える第2のサブモジュールと、
前記第1の電力半導体ダイの少なくとも1つの接点と前記第2の電力半導体ダイの少なくとも1つの接点との間に結合された取外し可能なジャンパとを備える、電力モジュール。 - 前記電力モジュールが、少なくとも3kVを遮断するように構成される、請求項1に記載の電力モジュール。
- 前記第1のサブモジュールと前記第2のサブモジュールとが、電力モジュールから独立して取外し可能である、請求項1に記載の電力モジュール。
- 前記第1の電力半導体ダイと前記第2の電力半導体ダイとが、金属酸化膜半導体電界効果トランジスタ(MOSFET)である、請求項1に記載の電力モジュール。
- 前記第1の電力半導体ダイの前記少なくとも1つの接点と前記第2の電力半導体ダイの前記少なくとも1つの接点とが、ゲート接点である、請求項4に記載の電力モジュール。
- 前記第1の電力半導体ダイと前記第2の電力半導体ダイとが、炭化ケイ素デバイスである、請求項4に記載の電力モジュール。
- 第3の電力半導体ダイを備える第3のサブモジュールと、
前記第3の電力半導体ダイの少なくとも1つの接点と前記第2の電力半導体ダイの前記少なくとも1つの接点との間に結合された追加の取外し可能なジャンパとをさらに備える、請求項1に記載の電力モジュール。 - 前記取外し可能なジャンパと前記追加の取外し可能なジャンパとを設けたとき、前記電力モジュールが、単相動作モードで動作するように構成され、
前記取外し可能なジャンパと前記追加の取外し可能なジャンパとを設けなかったとき、前記電力モジュールが、三相動作モードで動作するように構成される、請求項7に記載の電力モジュール。 - 前記第1のサブモジュールと、前記第2のサブモジュールと、前記第3のサブモジュールとが、前記電力モジュールから独立して取外し可能である、請求項7に記載の電力モジュール。
- 第1の接点と第2の接点とを備える第1の電力半導体ダイと、
第1の接点と第2の接点とを備える第2の電力半導体ダイと、
前記第1の電力半導体ダイと前記第2の電力半導体ダイとの間に結合された多層印刷回路板(PCB)とを備え、したがって、
前記多層PCBの第1の導電層が、前記第1の電力半導体ダイの前記第1の接点と前記第2の電力半導体ダイの前記第1の接点との間に結合され、
前記多層PCBの第2の導電層が、前記第1の電力半導体ダイの前記第2の接点と前記第2の電力半導体ダイの前記第2の接点との間に結合され、
前記第1の導電層と前記第2の導電層とが、絶縁層によって分離される、電力モジュール。 - 前記電力モジュールが、少なくとも3kVを遮断するように構成される、請求項10に
記載の電力モジュール。 - 前記第1の電力半導体ダイと前記第2の電力半導体ダイとが、金属酸化膜半導体電界効果トランジスタ(MOSFET)である、請求項10に記載の電力モジュール。
- 前記第1の電力半導体ダイと前記第2の電力半導体ダイとが、炭化ケイ素デバイスである、請求項12に記載の電力モジュール。
- 前記第1の電力半導体ダイの前記第1の接点と前記第2の電力半導体ダイの前記第1の接点が、ゲート接点であり、
前記第1の電力半導体ダイの前記第2の接点と前記第2の電力半導体ダイの前記第2の接点とが、ソース接点である、請求項12に記載の電力モジュール。 - 前記第1の導電層に結合された第1の電気コネクタと、
前記第2の導電層に結合された第2の電気コネクタとをさらに備える、請求項10に記載の電力モジュール。 - 前記第1の電気コネクタと前記第2の電気コネクタとの間のインダクタンスが、約15nH未満である、請求項15に記載の電力モジュール。
- 前記第1の電気コネクタと前記第2の電気コネクタとが、マイクロ同軸(MCX)コネクタに設けられる、請求項15に記載の電力モジュール。
- 前記第1の電力半導体ダイと前記第2の電力半導体ダイとが、第3の電気コネクタと第4の電気コネクタとの間に直列に結合された複数の半導体ダイの一部である、請求項10に記載の電力モジュール。
- 前記第3の電気コネクタと前記第4の電気コネクタとが、約30mmより大きい幅を有する、ボルト締めされたコネクタである、請求項18に記載の電力モジュール。
- 前記第3の電気コネクタと前記第4の電気コネクタとの間のインダクタンスが、約20nH未満である、請求項19に記載の電力モジュール。
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US9839146B2 (en) | 2017-12-05 |
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US20180070462A1 (en) | 2018-03-08 |
EP4170711A3 (en) | 2023-07-19 |
US10448524B2 (en) | 2019-10-15 |
CN112802829A (zh) | 2021-05-14 |
US20200053890A1 (en) | 2020-02-13 |
JP2023011745A (ja) | 2023-01-24 |
CN108370220A (zh) | 2018-08-03 |
US20170112005A1 (en) | 2017-04-20 |
EP3365968A2 (en) | 2018-08-29 |
EP4170711A2 (en) | 2023-04-26 |
WO2017078818A2 (en) | 2017-05-11 |
JP2018531576A (ja) | 2018-10-25 |
WO2017078818A3 (en) | 2017-07-13 |
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