JP2021064723A5 - - Google Patents

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JP2021064723A5
JP2021064723A5 JP2019189278A JP2019189278A JP2021064723A5 JP 2021064723 A5 JP2021064723 A5 JP 2021064723A5 JP 2019189278 A JP2019189278 A JP 2019189278A JP 2019189278 A JP2019189278 A JP 2019189278A JP 2021064723 A5 JP2021064723 A5 JP 2021064723A5
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JP2021064723A (ja
JP7292175B2 (ja
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Priority to US17/014,032 priority patent/US11563090B2/en
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JP2019189278A 2019-10-16 2019-10-16 半導体装置 Active JP7292175B2 (ja)

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Application Number Priority Date Filing Date Title
JP2019189278A JP7292175B2 (ja) 2019-10-16 2019-10-16 半導体装置
US17/014,032 US11563090B2 (en) 2019-10-16 2020-09-08 Semiconductor device

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Application Number Priority Date Filing Date Title
JP2019189278A JP7292175B2 (ja) 2019-10-16 2019-10-16 半導体装置

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JP2021064723A JP2021064723A (ja) 2021-04-22
JP2021064723A5 true JP2021064723A5 (https=) 2022-04-13
JP7292175B2 JP7292175B2 (ja) 2023-06-16

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12464791B2 (en) 2022-03-07 2025-11-04 Denso Corporation Semiconductor device
WO2026079220A1 (ja) * 2024-10-11 2026-04-16 住友電気工業株式会社 炭化珪素半導体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036213A (ja) 2005-06-20 2007-02-08 Toshiba Corp 半導体素子
US7462909B2 (en) 2005-06-20 2008-12-09 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
DE102005046707B3 (de) 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
JP4857697B2 (ja) 2005-10-05 2012-01-18 トヨタ自動車株式会社 炭化珪素半導体装置
JP2008177328A (ja) * 2007-01-18 2008-07-31 Denso Corp 半導体装置およびその製造方法
EP2610912A4 (en) * 2010-08-27 2014-10-22 Nat Univ Corp Nara Inst SIC SEMICONDUCTOR ELEMENT
JP2012186353A (ja) * 2011-03-07 2012-09-27 Fuji Electric Co Ltd 複合半導体装置
JP2013165197A (ja) * 2012-02-13 2013-08-22 Sumitomo Electric Ind Ltd 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP5867134B2 (ja) * 2012-02-13 2016-02-24 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9722018B2 (en) * 2012-03-30 2017-08-01 Fuji Electric Co., Ltd. Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
JP2013232574A (ja) 2012-05-01 2013-11-14 Mitsubishi Electric Corp 炭化珪素半導体装置
JP2014146748A (ja) 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
JP6177812B2 (ja) * 2013-02-05 2017-08-09 三菱電機株式会社 絶縁ゲート型炭化珪素半導体装置及びその製造方法
CN105190852B (zh) * 2013-03-15 2018-09-11 美国联合碳化硅公司 改进的vjfet器件
JP2015002277A (ja) * 2013-06-17 2015-01-05 三菱電機株式会社 炭化珪素半導体装置
JP6241958B2 (ja) * 2013-08-08 2017-12-13 富士電機株式会社 高耐圧半導体装置およびその製造方法
JP6244826B2 (ja) 2013-11-01 2017-12-13 住友金属鉱山株式会社 炭化珪素基板、炭化珪素基板製造方法、半導体素子
JP2016166112A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体基板及び半導体装置
JP6441190B2 (ja) * 2015-09-11 2018-12-19 株式会社東芝 半導体装置の製造方法
JP2017168720A (ja) 2016-03-17 2017-09-21 富士電機株式会社 炭化珪素半導体装置の製造方法
US11075264B2 (en) * 2016-05-31 2021-07-27 Cree, Inc. Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods
JP6833742B2 (ja) 2018-02-07 2021-02-24 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法
JP7023882B2 (ja) 2019-02-04 2022-02-22 株式会社東芝 半導体装置の製造方法、基板の製造方法、半導体装置、基板、及び、基板の製造装置

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