JP7292175B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7292175B2
JP7292175B2 JP2019189278A JP2019189278A JP7292175B2 JP 7292175 B2 JP7292175 B2 JP 7292175B2 JP 2019189278 A JP2019189278 A JP 2019189278A JP 2019189278 A JP2019189278 A JP 2019189278A JP 7292175 B2 JP7292175 B2 JP 7292175B2
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region
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semiconductor
semiconductor device
length
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JP2019189278A
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Japanese (ja)
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JP2021064723A (ja
JP2021064723A5 (https=
Inventor
譲司 西尾
達雄 清水
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Toshiba Corp
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Toshiba Corp
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Priority to JP2019189278A priority Critical patent/JP7292175B2/ja
Priority to US17/014,032 priority patent/US11563090B2/en
Publication of JP2021064723A publication Critical patent/JP2021064723A/ja
Publication of JP2021064723A5 publication Critical patent/JP2021064723A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
JP2019189278A 2019-10-16 2019-10-16 半導体装置 Active JP7292175B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019189278A JP7292175B2 (ja) 2019-10-16 2019-10-16 半導体装置
US17/014,032 US11563090B2 (en) 2019-10-16 2020-09-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019189278A JP7292175B2 (ja) 2019-10-16 2019-10-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2021064723A JP2021064723A (ja) 2021-04-22
JP2021064723A5 JP2021064723A5 (https=) 2022-04-13
JP7292175B2 true JP7292175B2 (ja) 2023-06-16

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Family Applications (1)

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JP2019189278A Active JP7292175B2 (ja) 2019-10-16 2019-10-16 半導体装置

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US (1) US11563090B2 (https=)
JP (1) JP7292175B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12464791B2 (en) 2022-03-07 2025-11-04 Denso Corporation Semiconductor device
WO2026079220A1 (ja) * 2024-10-11 2026-04-16 住友電気工業株式会社 炭化珪素半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015002277A (ja) 2013-06-17 2015-01-05 三菱電機株式会社 炭化珪素半導体装置
JP2019520703A (ja) 2016-05-31 2019-07-18 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． イオン注入チャネリング技術により形成される超接合パワーシリコンカーバイド半導体デバイス及び関連方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036213A (ja) 2005-06-20 2007-02-08 Toshiba Corp 半導体素子
US7462909B2 (en) 2005-06-20 2008-12-09 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
DE102005046707B3 (de) 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
JP4857697B2 (ja) 2005-10-05 2012-01-18 トヨタ自動車株式会社 炭化珪素半導体装置
JP2008177328A (ja) * 2007-01-18 2008-07-31 Denso Corp 半導体装置およびその製造方法
EP2610912A4 (en) * 2010-08-27 2014-10-22 Nat Univ Corp Nara Inst SIC SEMICONDUCTOR ELEMENT
JP2012186353A (ja) * 2011-03-07 2012-09-27 Fuji Electric Co Ltd 複合半導体装置
JP2013165197A (ja) * 2012-02-13 2013-08-22 Sumitomo Electric Ind Ltd 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP5867134B2 (ja) * 2012-02-13 2016-02-24 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9722018B2 (en) * 2012-03-30 2017-08-01 Fuji Electric Co., Ltd. Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
JP2013232574A (ja) 2012-05-01 2013-11-14 Mitsubishi Electric Corp 炭化珪素半導体装置
JP2014146748A (ja) 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
JP6177812B2 (ja) * 2013-02-05 2017-08-09 三菱電機株式会社 絶縁ゲート型炭化珪素半導体装置及びその製造方法
CN105190852B (zh) * 2013-03-15 2018-09-11 美国联合碳化硅公司 改进的vjfet器件
JP6241958B2 (ja) * 2013-08-08 2017-12-13 富士電機株式会社 高耐圧半導体装置およびその製造方法
JP6244826B2 (ja) 2013-11-01 2017-12-13 住友金属鉱山株式会社 炭化珪素基板、炭化珪素基板製造方法、半導体素子
JP2016166112A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体基板及び半導体装置
JP6441190B2 (ja) * 2015-09-11 2018-12-19 株式会社東芝 半導体装置の製造方法
JP2017168720A (ja) 2016-03-17 2017-09-21 富士電機株式会社 炭化珪素半導体装置の製造方法
JP6833742B2 (ja) 2018-02-07 2021-02-24 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法
JP7023882B2 (ja) 2019-02-04 2022-02-22 株式会社東芝 半導体装置の製造方法、基板の製造方法、半導体装置、基板、及び、基板の製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015002277A (ja) 2013-06-17 2015-01-05 三菱電機株式会社 炭化珪素半導体装置
JP2019520703A (ja) 2016-05-31 2019-07-18 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． イオン注入チャネリング技術により形成される超接合パワーシリコンカーバイド半導体デバイス及び関連方法

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US20210118999A1 (en) 2021-04-22
US11563090B2 (en) 2023-01-24

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