JP2021027324A5 - - Google Patents

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Publication number
JP2021027324A5
JP2021027324A5 JP2020079137A JP2020079137A JP2021027324A5 JP 2021027324 A5 JP2021027324 A5 JP 2021027324A5 JP 2020079137 A JP2020079137 A JP 2020079137A JP 2020079137 A JP2020079137 A JP 2020079137A JP 2021027324 A5 JP2021027324 A5 JP 2021027324A5
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Japan
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layer
composition ratio
electron block
light emitting
emitting device
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JP2020079137A
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Japanese (ja)
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JP7141425B2 (ja
JP2021027324A (ja
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JP2020079137A 2020-04-28 2020-04-28 窒化物半導体発光素子 Active JP7141425B2 (ja)

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JP2020079137A JP7141425B2 (ja) 2020-04-28 2020-04-28 窒化物半導体発光素子

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JP2020079137A JP7141425B2 (ja) 2020-04-28 2020-04-28 窒化物半導体発光素子

Related Parent Applications (1)

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JP2019144676A Division JP6698925B1 (ja) 2019-08-06 2019-08-06 窒化物半導体発光素子

Publications (3)

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JP2021027324A JP2021027324A (ja) 2021-02-22
JP2021027324A5 true JP2021027324A5 (https=) 2021-12-23
JP7141425B2 JP7141425B2 (ja) 2022-09-22

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Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
WO2021090849A1 (ja) * 2019-11-08 2021-05-14 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子、及び半導体発光素子の製造方法
JP7714412B2 (ja) 2021-09-08 2025-07-29 日亜化学工業株式会社 発光素子
JP7291357B1 (ja) * 2022-02-24 2023-06-15 国立研究開発法人理化学研究所 紫外発光素子およびそれを備える電気機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187591A (ja) * 2010-03-08 2011-09-22 Uv Craftory Co Ltd 窒化物半導体紫外線発光素子
US9252329B2 (en) * 2011-10-04 2016-02-02 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
CN103915534B (zh) * 2012-12-31 2017-08-22 比亚迪股份有限公司 一种led外延片及其形成方法
KR20160033815A (ko) * 2014-09-18 2016-03-29 삼성전자주식회사 반도체 발광소자
JP6084196B2 (ja) * 2014-12-08 2017-02-22 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子
JP5953447B1 (ja) * 2015-02-05 2016-07-20 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2016171127A (ja) * 2015-03-11 2016-09-23 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
EP3293774B1 (en) * 2015-07-21 2020-03-18 Soko Kagaku Co., Ltd. Nitride semiconductor ultraviolet light-emitting element
JP6896708B2 (ja) * 2015-09-17 2021-06-30 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. ２次元正孔ガスを組み込んだ紫外線発光デバイス
WO2017057149A1 (ja) * 2015-09-28 2017-04-06 日亜化学工業株式会社 窒化物半導体発光素子
JP6431013B2 (ja) * 2016-09-21 2018-11-28 シャープ株式会社 窒化アルミニウム系半導体深紫外発光素子
JP6456414B2 (ja) * 2017-02-01 2019-01-23 日機装株式会社 半導体発光素子
WO2018181044A1 (ja) * 2017-03-27 2018-10-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US20190103509A1 (en) * 2017-09-30 2019-04-04 Sensor Electronic Technology, Inc. Semiconductor Heterostructure with P-type Superlattice
EP3879583B1 (en) * 2018-11-05 2025-08-13 DOWA Electronics Materials Co., Ltd. Iii-nitride semiconductor light-emitting device and method of producing the same

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