JPWO2020022116A5 - - Google Patents
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- Publication number
- JPWO2020022116A5 JPWO2020022116A5 JP2020532304A JP2020532304A JPWO2020022116A5 JP WO2020022116 A5 JPWO2020022116 A5 JP WO2020022116A5 JP 2020532304 A JP2020532304 A JP 2020532304A JP 2020532304 A JP2020532304 A JP 2020532304A JP WO2020022116 A5 JPWO2020022116 A5 JP WO2020022116A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- laser device
- semiconductor laser
- type cladding
- cladding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000005253 cladding Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 9
- 230000000903 blocking effect Effects 0.000 claims 6
- 230000003287 optical effect Effects 0.000 claims 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018141109 | 2018-07-27 | ||
| JP2018141109 | 2018-07-27 | ||
| PCT/JP2019/027857 WO2020022116A1 (ja) | 2018-07-27 | 2019-07-16 | 半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020022116A1 JPWO2020022116A1 (ja) | 2021-08-02 |
| JPWO2020022116A5 true JPWO2020022116A5 (https=) | 2022-08-10 |
| JP7406487B2 JP7406487B2 (ja) | 2023-12-27 |
Family
ID=69180281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020532304A Active JP7406487B2 (ja) | 2018-07-27 | 2019-07-16 | 半導体レーザ素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11710941B2 (https=) |
| JP (1) | JP7406487B2 (https=) |
| WO (1) | WO2020022116A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021206012A1 (ja) * | 2020-04-06 | 2021-10-14 | ヌヴォトンテクノロジージャパン株式会社 | 半導体レーザ装置及び半導体レーザ装置の製造方法 |
| US12272929B2 (en) * | 2020-09-14 | 2025-04-08 | Lumentum Japan, Inc. | Optical semiconductor device |
| JP7622562B2 (ja) * | 2021-06-16 | 2025-01-28 | ウシオ電機株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JPWO2023238655A1 (https=) * | 2022-06-07 | 2023-12-14 | ||
| CN121175891A (zh) * | 2023-05-18 | 2025-12-19 | 新唐科技日本株式会社 | 半导体发光元件 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5717707A (en) * | 1995-01-03 | 1998-02-10 | Xerox Corporation | Index guided semiconductor laser diode with reduced shunt leakage currents |
| CN1204665C (zh) * | 2000-09-08 | 2005-06-01 | 三井化学株式会社 | 半导体激光器装置 |
| US6906352B2 (en) * | 2001-01-16 | 2005-06-14 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
| JP2006186250A (ja) * | 2004-12-28 | 2006-07-13 | Anritsu Corp | 半導体発光素子および外部共振器型レーザ光源 |
| JP2014212186A (ja) * | 2013-04-18 | 2014-11-13 | シャープ株式会社 | 半導体レーザ素子 |
| WO2019026953A1 (ja) | 2017-08-04 | 2019-02-07 | パナソニックＩｐマネジメント株式会社 | 半導体発光素子の製造方法及び半導体発光素子 |
-
2019
- 2019-07-16 WO PCT/JP2019/027857 patent/WO2020022116A1/ja not_active Ceased
- 2019-07-16 JP JP2020532304A patent/JP7406487B2/ja active Active
-
2021
- 2021-01-25 US US17/157,660 patent/US11710941B2/en active Active
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