JPWO2023238655A1 - - Google Patents
Info
- Publication number
- JPWO2023238655A1 JPWO2023238655A1 JP2024526343A JP2024526343A JPWO2023238655A1 JP WO2023238655 A1 JPWO2023238655 A1 JP WO2023238655A1 JP 2024526343 A JP2024526343 A JP 2024526343A JP 2024526343 A JP2024526343 A JP 2024526343A JP WO2023238655 A1 JPWO2023238655 A1 JP WO2023238655A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022092401 | 2022-06-07 | ||
| PCT/JP2023/019160 WO2023238655A1 (ja) | 2022-06-07 | 2023-05-23 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023238655A1 true JPWO2023238655A1 (https=) | 2023-12-14 |
| JPWO2023238655A5 JPWO2023238655A5 (https=) | 2025-04-28 |
Family
ID=89118199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024526343A Pending JPWO2023238655A1 (https=) | 2022-06-07 | 2023-05-23 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023238655A1 (https=) |
| CN (1) | CN119452537A (https=) |
| WO (1) | WO2023238655A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4075324B2 (ja) * | 2001-05-10 | 2008-04-16 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP2017224866A (ja) * | 2017-09-27 | 2017-12-21 | シャープ株式会社 | 窒化物半導体レーザ素子 |
| WO2020022116A1 (ja) * | 2018-07-27 | 2020-01-30 | パナソニックＩｐマネジメント株式会社 | 半導体レーザ素子 |
-
2023
- 2023-05-23 JP JP2024526343A patent/JPWO2023238655A1/ja active Pending
- 2023-05-23 CN CN202380044691.2A patent/CN119452537A/zh active Pending
- 2023-05-23 WO PCT/JP2023/019160 patent/WO2023238655A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023238655A1 (ja) | 2023-12-14 |
| CN119452537A (zh) | 2025-02-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241202 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250418 |