CN119452537A - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN119452537A
CN119452537A CN202380044691.2A CN202380044691A CN119452537A CN 119452537 A CN119452537 A CN 119452537A CN 202380044691 A CN202380044691 A CN 202380044691A CN 119452537 A CN119452537 A CN 119452537A
Authority
CN
China
Prior art keywords
layer
semiconductor light
emitting element
light guide
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380044691.2A
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English (en)
Chinese (zh)
Inventor
林茂生
吉田真治
川口靖利
冈口贵大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN119452537A publication Critical patent/CN119452537A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202380044691.2A 2022-06-07 2023-05-23 半导体发光元件 Pending CN119452537A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022092401 2022-06-07
JP2022-092401 2022-06-07
PCT/JP2023/019160 WO2023238655A1 (ja) 2022-06-07 2023-05-23 半導体発光素子

Publications (1)

Publication Number Publication Date
CN119452537A true CN119452537A (zh) 2025-02-14

Family

ID=89118199

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380044691.2A Pending CN119452537A (zh) 2022-06-07 2023-05-23 半导体发光元件

Country Status (3)

Country Link
JP (1) JPWO2023238655A1 (https=)
CN (1) CN119452537A (https=)
WO (1) WO2023238655A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
JP2017224866A (ja) * 2017-09-27 2017-12-21 シャープ株式会社 窒化物半導体レーザ素子
WO2020022116A1 (ja) * 2018-07-27 2020-01-30 パナソニックＩｐマネジメント株式会社 半導体レーザ素子

Also Published As

Publication number Publication date
WO2023238655A1 (ja) 2023-12-14
JPWO2023238655A1 (https=) 2023-12-14

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