JP2006228941A - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
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- JP2006228941A JP2006228941A JP2005040462A JP2005040462A JP2006228941A JP 2006228941 A JP2006228941 A JP 2006228941A JP 2005040462 A JP2005040462 A JP 2005040462A JP 2005040462 A JP2005040462 A JP 2005040462A JP 2006228941 A JP2006228941 A JP 2006228941A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000010521 absorption reaction Methods 0.000 claims abstract description 30
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 9
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 9
- 230000010355 oscillation Effects 0.000 claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 21
- 230000031700 light absorption Effects 0.000 claims description 21
- 238000005253 cladding Methods 0.000 claims description 18
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 129
- 239000010408 film Substances 0.000 description 36
- 239000000203 mixture Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
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- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】下部クラッド層2、活性層4、上部クラッド層6、およびコンタクト層7がこの順に積層され、コンタクト層7および上部クラッド層6の上層が凸条のストライプリッジ構造に成形されたリッジ部aを備えている。そして、リッジ部a脇の上部クラッド層6の上面からリッジ部aの側壁までが、埋め込み膜b1によって覆われている。この埋め込み膜b1は、第1低屈折率層11,発振波長のレーザ光を吸収する光吸収層12,第2低屈折率層13、光吸収層を兼ねる酸化防止層14をこの順に積層させた積層構造となっている。
【選択図】図1
Description
1)リッジ幅(W)を狭くする。
2)実効屈折率差(n1−n2)を小さくする。これを実現する構成として、図2で示した構造における低屈折率層(AlInP)106を、屈折率が3.4〜3.55の半導体層(例えばAlGaAs)に変更する構成が提案されている。これにより、実効屈折率差(n1−n2)が0.001〜0.005となり、基本モードが得られ易くなるとしている(下記特許文献1参照)。
3)埋め込み膜における高次モードの吸収係数を大きくすることにより、レーザ横モードが0次モードから高次モードに移動することを防止する手段も考えられる。そして、これを実現する手段としては、図2で示した構造における低屈折率層(AlInP)106を薄くして、レーザ光の吸収層ともなる酸化防止層(GaAs)107を活性層103に近づける構成が考えられる。
1)のリッジ幅(W)を狭くする解決手段では、半導体レーザにおけるリッジ部の熱抵抗が増大し、レーザ光発振時の発熱によりリッジ部の屈折率n1が増大するため、カットオフ条件から逸脱しやすくなる、という問題が発生する。
い。
からなる。この材料は、組成を調整することにより、レーザ光を吸収しない非吸収層となり、例えばその組成はAl0.5In0.5Pである。
Claims (5)
- 下部クラッド層、活性層、上部クラッド層がこの順に積層され、当該上部クラッド層の上層が凸条のストライプリッジ構造に成形された実屈折率型の半導体レーザにおいて、
発振波長のレーザ光を吸収する光吸収層を介して当該レーザ光の吸収を防止するための低屈折率層を2層以上積層させた積層構造の埋め込み膜によって、前記ストライプリッジ構造脇における前記上部クラッド層の上面から当該ストライプリッジ構造の側壁までが覆われている
ことを特徴とする半導体レーザ。 - 請求項1記載の半導体レーザにおいて、
前記上部クラッド層は、AlGaInPからなり、
前記光吸収層は、GaAsまたはAlGaAsからなり、
前記低屈折率層は、AlInP、AlGaInP、またはAlGaAsからなる
ことを特徴とする半導体レーザ。 - 請求項1記載の半導体レーザにおいて、
前記上部クラッド層は、AlGaAsからなり、
前記光吸収層は、GaAsまたはAlGaAsからなり、
前記低屈折率層は、AlInP、AlGaInP、またはAlGaAsからなる
ことを特徴とする半導体レーザ。 - 請求項1記載の半導体レーザにおいて、
前記埋め込み膜の最上層には、酸化防止層を兼ねた前記光吸収層が設けられている
ことを特徴とする半導体レーザ。 - 請求項1記載の半導体レーザにおいて、
前記埋め込み膜の最下層には、結晶性の向上を図るための層を兼ねた前記光吸収層が設けられていることを特徴とする半導体レーザ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005040462A JP2006228941A (ja) | 2005-02-17 | 2005-02-17 | 半導体レーザ |
US11/276,040 US7369594B2 (en) | 2005-02-17 | 2006-02-10 | Semiconductor laser |
CNB2006100085842A CN100470973C (zh) | 2005-02-17 | 2006-02-17 | 半导体激光器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005040462A JP2006228941A (ja) | 2005-02-17 | 2005-02-17 | 半導体レーザ |
Publications (1)
Publication Number | Publication Date |
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JP2006228941A true JP2006228941A (ja) | 2006-08-31 |
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ID=36815567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005040462A Pending JP2006228941A (ja) | 2005-02-17 | 2005-02-17 | 半導体レーザ |
Country Status (3)
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US (1) | US7369594B2 (ja) |
JP (1) | JP2006228941A (ja) |
CN (1) | CN100470973C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014078567A (ja) * | 2012-10-09 | 2014-05-01 | Mitsubishi Electric Corp | 半導体レーザ装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010027935A (ja) * | 2008-07-23 | 2010-02-04 | Sony Corp | 半導体レーザ、光ディスク装置および光ピックアップ |
CN108336641A (zh) * | 2017-01-20 | 2018-07-27 | 山东华光光电子股份有限公司 | 一种图形衬底半导体激光器及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001230493A (ja) * | 2000-02-21 | 2001-08-24 | Sony Corp | 半導体レーザ発光装置 |
JP2002198614A (ja) * | 2000-12-25 | 2002-07-12 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2005019953A (ja) * | 2003-06-25 | 2005-01-20 | Samsung Electro Mech Co Ltd | 高次モード吸収層を有する半導体レーザーダイオード |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004165481A (ja) * | 2002-11-14 | 2004-06-10 | Sharp Corp | 自励発振型半導体レーザ |
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2005
- 2005-02-17 JP JP2005040462A patent/JP2006228941A/ja active Pending
-
2006
- 2006-02-10 US US11/276,040 patent/US7369594B2/en not_active Expired - Fee Related
- 2006-02-17 CN CNB2006100085842A patent/CN100470973C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001230493A (ja) * | 2000-02-21 | 2001-08-24 | Sony Corp | 半導体レーザ発光装置 |
JP2002198614A (ja) * | 2000-12-25 | 2002-07-12 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2005019953A (ja) * | 2003-06-25 | 2005-01-20 | Samsung Electro Mech Co Ltd | 高次モード吸収層を有する半導体レーザーダイオード |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014078567A (ja) * | 2012-10-09 | 2014-05-01 | Mitsubishi Electric Corp | 半導体レーザ装置 |
Also Published As
Publication number | Publication date |
---|---|
US20060182161A1 (en) | 2006-08-17 |
CN100470973C (zh) | 2009-03-18 |
CN1822458A (zh) | 2006-08-23 |
US7369594B2 (en) | 2008-05-06 |
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