JP2023031164A5 - - Google Patents

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Publication number
JP2023031164A5
JP2023031164A5 JP2021136709A JP2021136709A JP2023031164A5 JP 2023031164 A5 JP2023031164 A5 JP 2023031164A5 JP 2021136709 A JP2021136709 A JP 2021136709A JP 2021136709 A JP2021136709 A JP 2021136709A JP 2023031164 A5 JP2023031164 A5 JP 2023031164A5
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JP
Japan
Prior art keywords
layer
side guide
guide layer
nitride
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021136709A
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English (en)
Japanese (ja)
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JP2023031164A (ja
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Publication date
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Priority to JP2021136709A priority Critical patent/JP2023031164A/ja
Priority claimed from JP2021136709A external-priority patent/JP2023031164A/ja
Priority to PCT/JP2022/030468 priority patent/WO2023026858A1/ja
Publication of JP2023031164A publication Critical patent/JP2023031164A/ja
Priority to US18/583,558 priority patent/US20240250505A1/en
Publication of JP2023031164A5 publication Critical patent/JP2023031164A5/ja
Pending legal-status Critical Current

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JP2021136709A 2021-08-24 2021-08-24 窒化物系半導体発光素子 Pending JP2023031164A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021136709A JP2023031164A (ja) 2021-08-24 2021-08-24 窒化物系半導体発光素子
PCT/JP2022/030468 WO2023026858A1 (ja) 2021-08-24 2022-08-09 窒化物系半導体発光素子
US18/583,558 US20240250505A1 (en) 2021-08-24 2024-02-21 Nitride semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021136709A JP2023031164A (ja) 2021-08-24 2021-08-24 窒化物系半導体発光素子

Publications (2)

Publication Number Publication Date
JP2023031164A JP2023031164A (ja) 2023-03-08
JP2023031164A5 true JP2023031164A5 (https=) 2024-10-22

Family

ID=85323180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021136709A Pending JP2023031164A (ja) 2021-08-24 2021-08-24 窒化物系半導体発光素子

Country Status (3)

Country Link
US (1) US20240250505A1 (https=)
JP (1) JP2023031164A (https=)
WO (1) WO2023026858A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033469A1 (ja) * 2023-08-10 2025-02-13 ヌヴォトンテクノロジージャパン株式会社 窒化物系半導体発光素子
WO2025258310A1 (ja) * 2024-06-10 2025-12-18 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09222619A (ja) * 1996-02-20 1997-08-26 Toshiba Corp 導波型光半導体装置
JP3420028B2 (ja) * 1997-07-29 2003-06-23 株式会社東芝 ＧａＮ系化合物半導体素子の製造方法
US6555403B1 (en) * 1997-07-30 2003-04-29 Fujitsu Limited Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same
JPH11340580A (ja) * 1997-07-30 1999-12-10 Fujitsu Ltd 半導体レーザ、半導体発光素子、及び、その製造方法
JP2000138419A (ja) * 1998-11-04 2000-05-16 Hitachi Ltd 半導体レーザ素子及びその製造方法
JP2000236142A (ja) * 1998-12-15 2000-08-29 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2000196143A (ja) * 1998-12-25 2000-07-14 Sharp Corp 半導体発光素子
JP2000244069A (ja) * 1999-02-18 2000-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体ヘテロ構造
JP4342134B2 (ja) * 2000-12-28 2009-10-14 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4441563B2 (ja) * 2000-12-28 2010-03-31 日亜化学工業株式会社 窒化物半導体レーザ素子
US6879612B1 (en) * 2001-01-23 2005-04-12 Optical Communication Products, Inc. Temperature insensitive VCSEL
KR100597532B1 (ko) * 2001-11-05 2006-07-10 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
JP2003318492A (ja) * 2002-02-19 2003-11-07 Furukawa Electric Co Ltd:The 半導体レーザ装置および半導体レーザモジュール
WO2003075425A1 (fr) * 2002-03-01 2003-09-12 Sanyo Electric Co., Ltd. Element laser a semi-conducteur a base de nitrure
JP2004134486A (ja) * 2002-10-09 2004-04-30 Nec Compound Semiconductor Devices Ltd 回折格子を備えた半導体レーザ
JP5781032B2 (ja) * 2012-07-30 2015-09-16 株式会社東芝 半導体発光素子
JP2014183120A (ja) * 2013-03-18 2014-09-29 Renesas Electronics Corp 半導体装置およびその製造方法並びに半導体ウェハ
JP6192378B2 (ja) * 2013-06-18 2017-09-06 学校法人 名城大学 窒化物半導体発光素子
PL228535B1 (pl) * 2015-11-10 2018-04-30 Inst Wysokich Cisnien Polskiej Akademii Nauk Dioda laserowa na bazie stopu AllnGaN
DE102016117477B4 (de) * 2016-09-16 2026-03-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und optoelektronischer Halbleiterchip
US10135227B1 (en) * 2017-05-19 2018-11-20 Palo Alto Research Center Incorporated Electron beam pumped non-c-plane UV emitters
JP7116291B2 (ja) * 2017-05-25 2022-08-10 日亜化学工業株式会社 半導体レーザ素子
US20200381898A1 (en) * 2017-12-01 2020-12-03 Sony Semiconductor Solutions Corporation Semiconductor light-emitting device
JP2019186262A (ja) * 2018-04-02 2019-10-24 ウシオオプトセミコンダクター株式会社 窒化物半導体発光素子
JP7355740B2 (ja) * 2018-08-24 2023-10-03 ソニーセミコンダクタソリューションズ株式会社 発光素子
JP7323786B2 (ja) * 2019-01-17 2023-08-09 日亜化学工業株式会社 半導体レーザ素子

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