JP2023031164A - 窒化物系半導体発光素子 - Google Patents

窒化物系半導体発光素子 Download PDF

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Publication number
JP2023031164A
JP2023031164A JP2021136709A JP2021136709A JP2023031164A JP 2023031164 A JP2023031164 A JP 2023031164A JP 2021136709 A JP2021136709 A JP 2021136709A JP 2021136709 A JP2021136709 A JP 2021136709A JP 2023031164 A JP2023031164 A JP 2023031164A
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JP
Japan
Prior art keywords
layer
side guide
nitride
guide layer
semiconductor light
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Pending
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JP2021136709A
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English (en)
Japanese (ja)
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JP2023031164A5 (https=
Inventor
徹 高山
Toru Takayama
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Nuvoton Technology Corp
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Nuvoton Technology Corp
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Priority to JP2021136709A priority Critical patent/JP2023031164A/ja
Priority to PCT/JP2022/030468 priority patent/WO2023026858A1/ja
Publication of JP2023031164A publication Critical patent/JP2023031164A/ja
Priority to US18/583,558 priority patent/US20240250505A1/en
Publication of JP2023031164A5 publication Critical patent/JP2023031164A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2021136709A 2021-08-24 2021-08-24 窒化物系半導体発光素子 Pending JP2023031164A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021136709A JP2023031164A (ja) 2021-08-24 2021-08-24 窒化物系半導体発光素子
PCT/JP2022/030468 WO2023026858A1 (ja) 2021-08-24 2022-08-09 窒化物系半導体発光素子
US18/583,558 US20240250505A1 (en) 2021-08-24 2024-02-21 Nitride semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021136709A JP2023031164A (ja) 2021-08-24 2021-08-24 窒化物系半導体発光素子

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JP2023031164A true JP2023031164A (ja) 2023-03-08
JP2023031164A5 JP2023031164A5 (https=) 2024-10-22

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JP (1) JP2023031164A (https=)
WO (1) WO2023026858A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033469A1 (ja) * 2023-08-10 2025-02-13 ヌヴォトンテクノロジージャパン株式会社 窒化物系半導体発光素子
WO2025258310A1 (ja) * 2024-06-10 2025-12-18 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09222619A (ja) * 1996-02-20 1997-08-26 Toshiba Corp 導波型光半導体装置
KR19990014304A (ko) * 1997-07-30 1999-02-25 아사구사 나오유끼 반도체 레이저, 반도체 발광 소자 및 그 제조 방법
JPH1154794A (ja) * 1997-07-29 1999-02-26 Toshiba Corp 化合物半導体素子及びその製造方法
JPH11340580A (ja) * 1997-07-30 1999-12-10 Fujitsu Ltd 半導体レーザ、半導体発光素子、及び、その製造方法
JP2000138419A (ja) * 1998-11-04 2000-05-16 Hitachi Ltd 半導体レーザ素子及びその製造方法
JP2000236142A (ja) * 1998-12-15 2000-08-29 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2000244069A (ja) * 1999-02-18 2000-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体ヘテロ構造
JP2002261393A (ja) * 2000-12-28 2002-09-13 Nichia Chem Ind Ltd 窒化物半導体素子
WO2003075425A1 (fr) * 2002-03-01 2003-09-12 Sanyo Electric Co., Ltd. Element laser a semi-conducteur a base de nitrure
JP2003273473A (ja) * 2001-11-05 2003-09-26 Nichia Chem Ind Ltd 半導体素子
JP2015002324A (ja) * 2013-06-18 2015-01-05 学校法人 名城大学 窒化物半導体発光素子
US20180331501A1 (en) * 2015-11-10 2018-11-15 Topgan Sp. Z O.O. AlInGaN ALLOY BASED LASER DIODE
JP2018200928A (ja) * 2017-05-25 2018-12-20 日亜化学工業株式会社 半導体レーザ素子
WO2019106931A1 (ja) * 2017-12-01 2019-06-06 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子
US20200235550A1 (en) * 2019-01-17 2020-07-23 Nichia Corporation Semiconductor laser element and method for manufacturing the same

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JP2000196143A (ja) * 1998-12-25 2000-07-14 Sharp Corp 半導体発光素子
JP4441563B2 (ja) * 2000-12-28 2010-03-31 日亜化学工業株式会社 窒化物半導体レーザ素子
US6879612B1 (en) * 2001-01-23 2005-04-12 Optical Communication Products, Inc. Temperature insensitive VCSEL
JP2003318492A (ja) * 2002-02-19 2003-11-07 Furukawa Electric Co Ltd:The 半導体レーザ装置および半導体レーザモジュール
JP2004134486A (ja) * 2002-10-09 2004-04-30 Nec Compound Semiconductor Devices Ltd 回折格子を備えた半導体レーザ
JP5781032B2 (ja) * 2012-07-30 2015-09-16 株式会社東芝 半導体発光素子
JP2014183120A (ja) * 2013-03-18 2014-09-29 Renesas Electronics Corp 半導体装置およびその製造方法並びに半導体ウェハ
DE102016117477B4 (de) * 2016-09-16 2026-03-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und optoelektronischer Halbleiterchip
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JP2019186262A (ja) * 2018-04-02 2019-10-24 ウシオオプトセミコンダクター株式会社 窒化物半導体発光素子
JP7355740B2 (ja) * 2018-08-24 2023-10-03 ソニーセミコンダクタソリューションズ株式会社 発光素子

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09222619A (ja) * 1996-02-20 1997-08-26 Toshiba Corp 導波型光半導体装置
JPH1154794A (ja) * 1997-07-29 1999-02-26 Toshiba Corp 化合物半導体素子及びその製造方法
KR19990014304A (ko) * 1997-07-30 1999-02-25 아사구사 나오유끼 반도체 레이저, 반도체 발광 소자 및 그 제조 방법
JPH11340580A (ja) * 1997-07-30 1999-12-10 Fujitsu Ltd 半導体レーザ、半導体発光素子、及び、その製造方法
US6555403B1 (en) * 1997-07-30 2003-04-29 Fujitsu Limited Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same
JP2000138419A (ja) * 1998-11-04 2000-05-16 Hitachi Ltd 半導体レーザ素子及びその製造方法
JP2000236142A (ja) * 1998-12-15 2000-08-29 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2000244069A (ja) * 1999-02-18 2000-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体ヘテロ構造
JP2002261393A (ja) * 2000-12-28 2002-09-13 Nichia Chem Ind Ltd 窒化物半導体素子
JP2003273473A (ja) * 2001-11-05 2003-09-26 Nichia Chem Ind Ltd 半導体素子
CN1484880A (zh) * 2001-11-05 2004-03-24 ���ǻ�ѧ��ҵ��ʽ���� 氮化物半导体元件
WO2003075425A1 (fr) * 2002-03-01 2003-09-12 Sanyo Electric Co., Ltd. Element laser a semi-conducteur a base de nitrure
JP2015002324A (ja) * 2013-06-18 2015-01-05 学校法人 名城大学 窒化物半導体発光素子
US20160149078A1 (en) * 2013-06-18 2016-05-26 Meijo University Nitride semiconductor light-emitting device
US20180331501A1 (en) * 2015-11-10 2018-11-15 Topgan Sp. Z O.O. AlInGaN ALLOY BASED LASER DIODE
JP2018200928A (ja) * 2017-05-25 2018-12-20 日亜化学工業株式会社 半導体レーザ素子
WO2019106931A1 (ja) * 2017-12-01 2019-06-06 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子
US20200381898A1 (en) * 2017-12-01 2020-12-03 Sony Semiconductor Solutions Corporation Semiconductor light-emitting device
US20200235550A1 (en) * 2019-01-17 2020-07-23 Nichia Corporation Semiconductor laser element and method for manufacturing the same
JP2020115539A (ja) * 2019-01-17 2020-07-30 日亜化学工業株式会社 半導体レーザ素子

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US20240250505A1 (en) 2024-07-25

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