JP2023117509A5 - - Google Patents

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Publication number
JP2023117509A5
JP2023117509A5 JP2022020107A JP2022020107A JP2023117509A5 JP 2023117509 A5 JP2023117509 A5 JP 2023117509A5 JP 2022020107 A JP2022020107 A JP 2022020107A JP 2022020107 A JP2022020107 A JP 2022020107A JP 2023117509 A5 JP2023117509 A5 JP 2023117509A5
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JP
Japan
Prior art keywords
side guide
layer
guide layer
band gap
gap energy
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JP2022020107A
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English (en)
Japanese (ja)
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JP2023117509A (ja
JP7820180B2 (ja
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Priority claimed from JP2022020107A external-priority patent/JP7820180B2/ja
Priority to JP2022020107A priority Critical patent/JP7820180B2/ja
Application filed filed Critical
Priority to CN202380021125.XA priority patent/CN118805310A/zh
Priority to PCT/JP2023/003577 priority patent/WO2023153330A1/ja
Priority to EP23752795.7A priority patent/EP4481964A4/en
Publication of JP2023117509A publication Critical patent/JP2023117509A/ja
Priority to US18/797,188 priority patent/US20240396304A1/en
Publication of JP2023117509A5 publication Critical patent/JP2023117509A5/ja
Publication of JP7820180B2 publication Critical patent/JP7820180B2/ja
Application granted granted Critical
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JP2022020107A 2022-02-14 2022-02-14 窒化物系半導体発光素子 Active JP7820180B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022020107A JP7820180B2 (ja) 2022-02-14 2022-02-14 窒化物系半導体発光素子
CN202380021125.XA CN118805310A (zh) 2022-02-14 2023-02-03 氮化物系半导体发光元件
PCT/JP2023/003577 WO2023153330A1 (ja) 2022-02-14 2023-02-03 窒化物系半導体発光素子
EP23752795.7A EP4481964A4 (en) 2022-02-14 2023-02-03 Nitride-based light-emitting semiconductor element
US18/797,188 US20240396304A1 (en) 2022-02-14 2024-08-07 Nitride semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022020107A JP7820180B2 (ja) 2022-02-14 2022-02-14 窒化物系半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026020838A Division JP2026071392A (ja) 2026-02-12 窒化物系半導体発光素子

Publications (3)

Publication Number Publication Date
JP2023117509A JP2023117509A (ja) 2023-08-24
JP2023117509A5 true JP2023117509A5 (https=) 2025-02-20
JP7820180B2 JP7820180B2 (ja) 2026-02-25

Family

ID=87564358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022020107A Active JP7820180B2 (ja) 2022-02-14 2022-02-14 窒化物系半導体発光素子

Country Status (5)

Country Link
US (1) US20240396304A1 (https=)
EP (1) EP4481964A4 (https=)
JP (1) JP7820180B2 (https=)
CN (1) CN118805310A (https=)
WO (1) WO2023153330A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025142641A1 (ja) * 2023-12-28 2025-07-03 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子及び半導体レーザ素子の製造方法
WO2025192334A1 (ja) * 2024-03-11 2025-09-18 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子
WO2025258311A1 (ja) * 2024-06-10 2025-12-18 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4260276B2 (ja) * 1998-03-27 2009-04-30 シャープ株式会社 半導体素子及びその製造方法
JP3726252B2 (ja) * 2000-02-23 2005-12-14 独立行政法人理化学研究所 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
US8254423B2 (en) * 2008-05-30 2012-08-28 The Regents Of The University Of California (Al,Ga,In)N diode laser fabricated at reduced temperature
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
JP2010109332A (ja) * 2008-09-30 2010-05-13 Sanyo Electric Co Ltd 半導体レーザ装置および表示装置
JP2010177651A (ja) * 2009-02-02 2010-08-12 Rohm Co Ltd 半導体レーザ素子
JP5316210B2 (ja) * 2009-05-11 2013-10-16 住友電気工業株式会社 窒化物半導体発光素子
JP2011146650A (ja) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd ＧａＮ系半導体発光素子およびその製造方法
JP2013038394A (ja) * 2011-07-14 2013-02-21 Rohm Co Ltd 半導体レーザ素子
US9124071B2 (en) 2012-11-27 2015-09-01 Nichia Corporation Nitride semiconductor laser element
CN107710381B (zh) * 2015-05-19 2022-01-18 耶鲁大学 涉及具有晶格匹配的覆层的高限制因子的iii族氮化物边发射激光二极管的方法和器件
JP2017073511A (ja) * 2015-10-09 2017-04-13 旭化成株式会社 半導体発光素子
JP7323786B2 (ja) * 2019-01-17 2023-08-09 日亜化学工業株式会社 半導体レーザ素子

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