JP7820180B2 - 窒化物系半導体発光素子 - Google Patents

窒化物系半導体発光素子

Info

Publication number
JP7820180B2
JP7820180B2 JP2022020107A JP2022020107A JP7820180B2 JP 7820180 B2 JP7820180 B2 JP 7820180B2 JP 2022020107 A JP2022020107 A JP 2022020107A JP 2022020107 A JP2022020107 A JP 2022020107A JP 7820180 B2 JP7820180 B2 JP 7820180B2
Authority
JP
Japan
Prior art keywords
layer
side guide
guide layer
average
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022020107A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023117509A (ja
JP2023117509A5 (https=
Inventor
徹 高山
真治 吉田
靖利 川口
貴大 岡口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority to JP2022020107A priority Critical patent/JP7820180B2/ja
Priority to CN202380021125.XA priority patent/CN118805310A/zh
Priority to PCT/JP2023/003577 priority patent/WO2023153330A1/ja
Priority to EP23752795.7A priority patent/EP4481964A4/en
Publication of JP2023117509A publication Critical patent/JP2023117509A/ja
Priority to US18/797,188 priority patent/US20240396304A1/en
Publication of JP2023117509A5 publication Critical patent/JP2023117509A5/ja
Application granted granted Critical
Publication of JP7820180B2 publication Critical patent/JP7820180B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022020107A 2022-02-14 2022-02-14 窒化物系半導体発光素子 Active JP7820180B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022020107A JP7820180B2 (ja) 2022-02-14 2022-02-14 窒化物系半導体発光素子
CN202380021125.XA CN118805310A (zh) 2022-02-14 2023-02-03 氮化物系半导体发光元件
PCT/JP2023/003577 WO2023153330A1 (ja) 2022-02-14 2023-02-03 窒化物系半導体発光素子
EP23752795.7A EP4481964A4 (en) 2022-02-14 2023-02-03 Nitride-based light-emitting semiconductor element
US18/797,188 US20240396304A1 (en) 2022-02-14 2024-08-07 Nitride semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022020107A JP7820180B2 (ja) 2022-02-14 2022-02-14 窒化物系半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026020838A Division JP2026071392A (ja) 2026-02-12 窒化物系半導体発光素子

Publications (3)

Publication Number Publication Date
JP2023117509A JP2023117509A (ja) 2023-08-24
JP2023117509A5 JP2023117509A5 (https=) 2025-02-20
JP7820180B2 true JP7820180B2 (ja) 2026-02-25

Family

ID=87564358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022020107A Active JP7820180B2 (ja) 2022-02-14 2022-02-14 窒化物系半導体発光素子

Country Status (5)

Country Link
US (1) US20240396304A1 (https=)
EP (1) EP4481964A4 (https=)
JP (1) JP7820180B2 (https=)
CN (1) CN118805310A (https=)
WO (1) WO2023153330A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025142641A1 (ja) * 2023-12-28 2025-07-03 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子及び半導体レーザ素子の製造方法
WO2025192334A1 (ja) * 2024-03-11 2025-09-18 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子
WO2025258311A1 (ja) * 2024-06-10 2025-12-18 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237455A (ja) 2000-02-23 2001-08-31 Inst Of Physical & Chemical Res 紫外域の短波長域において発光するＩｎＡｌＧａＮおよびその製造方法ならびにそれを用いた紫外発光素子
JP2002335052A (ja) 2001-05-10 2002-11-22 Nichia Chem Ind Ltd 窒化物半導体素子
US20070248135A1 (en) 2006-04-19 2007-10-25 Mawst Luke J Quantum well lasers with strained quantum wells and dilute nitride barriers
JP2010109332A (ja) 2008-09-30 2010-05-13 Sanyo Electric Co Ltd 半導体レーザ装置および表示装置
US20100142576A1 (en) 2008-05-30 2010-06-10 The Regents Of The University Of California (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
JP2010177651A (ja) 2009-02-02 2010-08-12 Rohm Co Ltd 半導体レーザ素子
JP2010263163A (ja) 2009-05-11 2010-11-18 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
JP2011146650A (ja) 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd ＧａＮ系半導体発光素子およびその製造方法
JP2013038394A (ja) 2011-07-14 2013-02-21 Rohm Co Ltd 半導体レーザ素子
JP2017073511A (ja) 2015-10-09 2017-04-13 旭化成株式会社 半導体発光素子
JP2018517295A (ja) 2015-05-19 2018-06-28 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 格子整合クラッド層を有する高い閉じ込め係数のｉｉｉ窒化物端面発光レーザーダイオードに関する方法およびデバイス
JP2020115539A (ja) 2019-01-17 2020-07-30 日亜化学工業株式会社 半導体レーザ素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4260276B2 (ja) * 1998-03-27 2009-04-30 シャープ株式会社 半導体素子及びその製造方法
US9124071B2 (en) 2012-11-27 2015-09-01 Nichia Corporation Nitride semiconductor laser element

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237455A (ja) 2000-02-23 2001-08-31 Inst Of Physical & Chemical Res 紫外域の短波長域において発光するＩｎＡｌＧａＮおよびその製造方法ならびにそれを用いた紫外発光素子
JP2002335052A (ja) 2001-05-10 2002-11-22 Nichia Chem Ind Ltd 窒化物半導体素子
US20070248135A1 (en) 2006-04-19 2007-10-25 Mawst Luke J Quantum well lasers with strained quantum wells and dilute nitride barriers
US20100142576A1 (en) 2008-05-30 2010-06-10 The Regents Of The University Of California (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
JP2010109332A (ja) 2008-09-30 2010-05-13 Sanyo Electric Co Ltd 半導体レーザ装置および表示装置
JP2010177651A (ja) 2009-02-02 2010-08-12 Rohm Co Ltd 半導体レーザ素子
JP2010263163A (ja) 2009-05-11 2010-11-18 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
JP2011146650A (ja) 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd ＧａＮ系半導体発光素子およびその製造方法
JP2013038394A (ja) 2011-07-14 2013-02-21 Rohm Co Ltd 半導体レーザ素子
JP2018517295A (ja) 2015-05-19 2018-06-28 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 格子整合クラッド層を有する高い閉じ込め係数のｉｉｉ窒化物端面発光レーザーダイオードに関する方法およびデバイス
JP2017073511A (ja) 2015-10-09 2017-04-13 旭化成株式会社 半導体発光素子
JP2020115539A (ja) 2019-01-17 2020-07-30 日亜化学工業株式会社 半導体レーザ素子

Also Published As

Publication number Publication date
JP2023117509A (ja) 2023-08-24
WO2023153330A1 (ja) 2023-08-17
CN118805310A (zh) 2024-10-18
EP4481964A4 (en) 2025-06-25
EP4481964A1 (en) 2024-12-25
US20240396304A1 (en) 2024-11-28

Similar Documents

Publication Publication Date Title
JP7820180B2 (ja) 窒化物系半導体発光素子
JP2024063088A (ja) 半導体発光素子
US11509117B2 (en) Light emitting element
US11710941B2 (en) Semiconductor laser element
CN101490915B (zh) 半导体激光装置
US20250239836A1 (en) Nitride semiconductor light-emitting element
US20240250505A1 (en) Nitride semiconductor light-emitting element
JP2023117509A5 (https=)
US20250113669A1 (en) Nitride semiconductor light-emitting element
JP7737250B2 (ja) 窒化物系半導体発光素子
CN1305192C (zh) 具有高阶模式吸收层的半导体激光二极管
US20240396306A1 (en) Nitride semiconductor light-emitting element
JP2023031164A5 (https=)
JP2024075517A (ja) 窒化物系半導体発光素子
JP2026071392A (ja) 窒化物系半導体発光素子
US12575226B2 (en) Nitride semiconductor light-emitting element
US20230402821A1 (en) Nitride semiconductor light-emitting element
WO2025033469A1 (ja) 窒化物系半導体発光素子
WO2025258310A1 (ja) 半導体レーザ素子
WO2025258311A1 (ja) 半導体レーザ素子
CN121942101A (zh) 氮化物系半导体发光元件
WO2023238655A1 (ja) 半導体発光素子
JPWO2023243518A5 (https=)
WO2015011858A1 (ja) 窒化物半導体レーザ素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250212

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250826

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251024

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260113

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260212

R150 Certificate of patent or registration of utility model

Ref document number: 7820180

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150