JPWO2023243518A5 - - Google Patents

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Publication number
JPWO2023243518A5
JPWO2023243518A5 JP2024528768A JP2024528768A JPWO2023243518A5 JP WO2023243518 A5 JPWO2023243518 A5 JP WO2023243518A5 JP 2024528768 A JP2024528768 A JP 2024528768A JP 2024528768 A JP2024528768 A JP 2024528768A JP WO2023243518 A5 JPWO2023243518 A5 JP WO2023243518A5
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JP
Japan
Prior art keywords
layer
side guide
band gap
guide layer
gap energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024528768A
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English (en)
Japanese (ja)
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JPWO2023243518A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/021208 external-priority patent/WO2023243518A1/ja
Publication of JPWO2023243518A1 publication Critical patent/JPWO2023243518A1/ja
Publication of JPWO2023243518A5 publication Critical patent/JPWO2023243518A5/ja
Pending legal-status Critical Current

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JP2024528768A 2022-06-13 2023-06-07 Pending JPWO2023243518A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022095006 2022-06-13
PCT/JP2023/021208 WO2023243518A1 (ja) 2022-06-13 2023-06-07 窒化物系半導体発光素子

Publications (2)

Publication Number Publication Date
JPWO2023243518A1 JPWO2023243518A1 (https=) 2023-12-21
JPWO2023243518A5 true JPWO2023243518A5 (https=) 2025-02-21

Family

ID=89191185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024528768A Pending JPWO2023243518A1 (https=) 2022-06-13 2023-06-07

Country Status (3)

Country Link
US (1) US20250113669A1 (https=)
JP (1) JPWO2023243518A1 (https=)
WO (1) WO2023243518A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025254089A1 (ja) * 2024-06-05 2025-12-11 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子、及び半導体レーザ素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000261106A (ja) * 1999-01-07 2000-09-22 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及び光ディスク装置
WO2005101532A1 (ja) * 2004-04-16 2005-10-27 Nitride Semiconductors Co., Ltd. 窒化ガリウム系発光装置
JP2010177651A (ja) * 2009-02-02 2010-08-12 Rohm Co Ltd 半導体レーザ素子
JP5255106B2 (ja) * 2011-10-24 2013-08-07 住友電気工業株式会社 窒化物半導体発光素子
US8975616B2 (en) * 2012-07-03 2015-03-10 Liang Wang Quantum efficiency of multiple quantum wells
JP2016219587A (ja) * 2015-05-20 2016-12-22 ソニー株式会社 半導体光デバイス
JP7664849B2 (ja) * 2019-11-27 2025-04-18 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子、及び、半導体発光素子の製造方法

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