JP2021027071A - レーザー加工装置 - Google Patents
レーザー加工装置 Download PDFInfo
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- JP2021027071A JP2021027071A JP2019141077A JP2019141077A JP2021027071A JP 2021027071 A JP2021027071 A JP 2021027071A JP 2019141077 A JP2019141077 A JP 2019141077A JP 2019141077 A JP2019141077 A JP 2019141077A JP 2021027071 A JP2021027071 A JP 2021027071A
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- 235000012431 wafers Nutrition 0.000 claims abstract description 184
- 238000003384 imaging method Methods 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 abstract description 8
- 238000003754 machining Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
Description
波長 :1342nm
繰り返し周波数 :90kHz
平均出力 :1.2W
送り速度 :700mm/秒
2:基台
4:レーザー光線照射手段
4a:集光器
6:撮像手段
10:ウエーハ
16:ノッチ
20:送り手段
21:X軸送り手段
22:Y軸送り手段
26:枠体
261:垂直壁部
262:水平壁部
30:保持手段
31:X軸方向可動板
32:Y軸方向可働板
33:支柱
34:カバーテーブル
35:チャックテーブル
40:カセット載置機構
41、41:カセット載置領域
42:第1のカセット
43:第2のカセット
50:搬出入手段
52:駆動機構
53:アーム基台
54:アーム機構
55:ロボットハンド
100:制御手段
110:判断部
Claims (3)
- 複数のデバイスが、分割予定ラインによって区画され表面に形成されたウエーハにレーザー加工を施すレーザー加工装置であって、
複数のウエーハを収容したカセットを載置するカセット載置台と、該カセットからウエーハを搬出入する搬出入手段と、
該搬出入手段によって搬出されたウエーハを回転可能に保持する保持手段と、該保持手段に保持されたウエーハに対して透過性を有する波長のレーザー光線の集光点を分割予定ラインの内部に位置付けて照射し、分割の起点となる改質層を形成するレーザー光線照射手段と、該保持手段と該レーザー光線照射手段とを相対的に加工送りする送り手段と、ウエーハを撮像する撮像手段と、制御手段と、を含み、
該制御手段は、該搬出入手段によって加工済のウエーハをカセットに収容する際、ウエーハに形成された結晶方位を示すマークを、未加工のウエーハがカセットに収容されている際の方向とは異なる所定の方向に位置付けてカセットに収容するレーザー加工装置。 - 該制御手段は、該搬出入手段が該カセットからウエーハを搬出し、該撮像手段によって撮像したウエーハの結晶方位を示すマークが第一の方向を向いている場合は、未加工のウエーハであると判断し、該マークが第二の方向を向いている場合は、加工済のウエーハであると判断する判断部を備える請求項1に記載のレーザー加工装置。
- 該判断部が加工済のウエーハと判断した際、警告を発する請求項2に記載のレーザー加工装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019141077A JP7358107B2 (ja) | 2019-07-31 | 2019-07-31 | レーザー加工装置 |
KR1020200080788A KR20210015637A (ko) | 2019-07-31 | 2020-07-01 | 레이저 가공 장치 |
SG10202006742UA SG10202006742UA (en) | 2019-07-31 | 2020-07-15 | Laser processing apparatus |
US16/936,631 US11364573B2 (en) | 2019-07-31 | 2020-07-23 | Laser processing apparatus including imager of mark of processed workpiece |
CN202010730279.4A CN112388154B (zh) | 2019-07-31 | 2020-07-27 | 激光加工装置 |
TW109125534A TW202107606A (zh) | 2019-07-31 | 2020-07-29 | 雷射加工裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019141077A JP7358107B2 (ja) | 2019-07-31 | 2019-07-31 | レーザー加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021027071A true JP2021027071A (ja) | 2021-02-22 |
JP7358107B2 JP7358107B2 (ja) | 2023-10-10 |
Family
ID=74259854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019141077A Active JP7358107B2 (ja) | 2019-07-31 | 2019-07-31 | レーザー加工装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11364573B2 (ja) |
JP (1) | JP7358107B2 (ja) |
KR (1) | KR20210015637A (ja) |
CN (1) | CN112388154B (ja) |
SG (1) | SG10202006742UA (ja) |
TW (1) | TW202107606A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021259120A1 (zh) * | 2020-06-22 | 2021-12-30 | 长鑫存储技术有限公司 | 镭射机台自动化运行方法及系统 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021010936A (ja) * | 2019-07-09 | 2021-02-04 | 株式会社ディスコ | レーザ加工装置 |
CN114289880A (zh) * | 2021-12-28 | 2022-04-08 | 苏州富纳智能科技有限公司 | 一种全自动智能的产品打标设备 |
Citations (6)
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JPH04163936A (ja) * | 1990-10-29 | 1992-06-09 | Fujitsu Ltd | 半導体製造装置 |
JP2007005579A (ja) * | 2005-06-24 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 基板の処理装置および処理方法 |
JP2014229702A (ja) * | 2013-05-21 | 2014-12-08 | 株式会社ディスコ | レーザー加工装置 |
JP2018008286A (ja) * | 2016-07-12 | 2018-01-18 | 株式会社ディスコ | 静電チャックテーブル、レーザー加工装置及び被加工物の加工方法 |
JP2018098363A (ja) * | 2016-12-13 | 2018-06-21 | 株式会社ディスコ | レーザー加工装置 |
JP2019063812A (ja) * | 2017-09-28 | 2019-04-25 | 株式会社ディスコ | レーザー加工装置 |
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JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP5295720B2 (ja) * | 2008-11-04 | 2013-09-18 | 株式会社ディスコ | 半導体ウエーハ加工装置 |
JP6020040B2 (ja) * | 2012-10-26 | 2016-11-02 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6300645B2 (ja) * | 2014-05-30 | 2018-03-28 | 株式会社ディスコ | 加工装置 |
JP6672053B2 (ja) * | 2016-04-18 | 2020-03-25 | 株式会社ディスコ | ウェーハの加工方法 |
JP6858452B2 (ja) * | 2017-06-23 | 2021-04-14 | 株式会社ディスコ | 識別マーク付きウェーハ治具 |
JP7479762B2 (ja) * | 2020-08-03 | 2024-05-09 | 株式会社ディスコ | デバイスチップの製造方法 |
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2019
- 2019-07-31 JP JP2019141077A patent/JP7358107B2/ja active Active
-
2020
- 2020-07-01 KR KR1020200080788A patent/KR20210015637A/ko unknown
- 2020-07-15 SG SG10202006742UA patent/SG10202006742UA/en unknown
- 2020-07-23 US US16/936,631 patent/US11364573B2/en active Active
- 2020-07-27 CN CN202010730279.4A patent/CN112388154B/zh active Active
- 2020-07-29 TW TW109125534A patent/TW202107606A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04163936A (ja) * | 1990-10-29 | 1992-06-09 | Fujitsu Ltd | 半導体製造装置 |
JP2007005579A (ja) * | 2005-06-24 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 基板の処理装置および処理方法 |
JP2014229702A (ja) * | 2013-05-21 | 2014-12-08 | 株式会社ディスコ | レーザー加工装置 |
JP2018008286A (ja) * | 2016-07-12 | 2018-01-18 | 株式会社ディスコ | 静電チャックテーブル、レーザー加工装置及び被加工物の加工方法 |
JP2018098363A (ja) * | 2016-12-13 | 2018-06-21 | 株式会社ディスコ | レーザー加工装置 |
JP2019063812A (ja) * | 2017-09-28 | 2019-04-25 | 株式会社ディスコ | レーザー加工装置 |
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WO2021259120A1 (zh) * | 2020-06-22 | 2021-12-30 | 长鑫存储技术有限公司 | 镭射机台自动化运行方法及系统 |
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