JP2018008286A - 静電チャックテーブル、レーザー加工装置及び被加工物の加工方法 - Google Patents
静電チャックテーブル、レーザー加工装置及び被加工物の加工方法 Download PDFInfo
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- 238000006467 substitution reaction Methods 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
【解決手段】静電チャックテーブル1は、被加工物Wが透過性を有する所定波長のレーザー光線Lに対し透過性を備え、第1の面2aと該第1の面2aと反対側の第2の面2bを有する板状の基台部2と、所定波長のレーザー光線Lに対し透過性を有し、基台部2の第1の面2aに積層される静電吸着用の電極部3と、所定波長のレーザー光線Lに対し透過性を有し、電極部3を覆い、被加工物Wを保持する保持面1aを構成するPETフィルム4と、を備える。静電チャックテーブル1は、基台部2の第2の面2bからレーザー光線Lを照射し、保持面1aで保持した被加工物Wの内部に改質層Kを形成する際に用いられる。
【選択図】図9
Description
本発明の実施形態1に係る静電チャックテーブル1、レーザー加工装置10及び被加工物Wの加工方法を図面に基いて説明する。図1は、実施形態1に係る被加工物の加工方法の加工対象の被加工物を示す斜視図である。図2は、図1に示された被加工物を環状フレームで支持した状態を示す斜視図である。
本発明の実施形態2に係る静電チャックテーブルを図面に基いて説明する。図10は、実施形態2に係る静電チャックテーブルの要部の断面図である。図10において、実施形態1と同一部分には、同一符号を付して説明を省略する。
1a 保持面
2 基台部
2a 第1の面
2b 第2の面
3 電極部
4 PETフィルム(樹脂層)
10 レーザー加工装置
20 レーザー光線照射ユニット
W 被加工物
WS 表面
WR 裏面
D デバイス(MEMSデバイス)
L レーザー光線
K 改質層
Claims (5)
- 被加工物を保持する静電チャックテーブルであって、
被加工物が透過性を有する所定波長のレーザー光線に対し透過性を備え、第1の面と該第1の面と反対側の第2の面を有する板状の基台部と、
該所定波長のレーザー光線に対し透過性を有し、該基台部の該第1の面に積層される静電吸着用の電極部と、
該所定波長のレーザー光線に対し透過性を有し、該電極部を覆い、被加工物を保持する保持面を構成する樹脂層と、を備え、
該基台部の該第2の面からレーザー光線を照射し、該保持面で保持した該被加工物の内部に改質層を形成する際に用いる静電チャックテーブル。 - 該所定波長は、500nm〜1400nmである請求項1記載の静電チャックテーブル。
- 被加工物は、MEMSデバイスが表面に形成された板状物であり、裏面側を該保持面で保持する請求項1または2記載の静電チャックテーブル。
- 被加工物を保持する静電チャックテーブルと、該静電チャックテーブルに保持された被加工物に対し透過性を有する波長のレーザー光線で被加工物の内部に改質層を形成するレーザー光線照射ユニットを備えるレーザー加工装置であって、
該静電チャックテーブルは請求項1、2又は3記載の静電チャックテーブルであることを特徴とするレーザー加工装置。 - 請求項1、2又は3記載の静電チャックテーブルの保持面に被加工物を保持する保持ステップと、
該第2の面から照射され、該静電チャックテーブルを透過したレーザー光線によって、該保持面で保持した該被加工物の内部に改質層を形成する改質層形成ステップと、を備える被加工物の加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016137984A JP6784527B2 (ja) | 2016-07-12 | 2016-07-12 | 静電チャックテーブル、レーザー加工装置及び被加工物の加工方法 |
TW106118506A TWI723172B (zh) | 2016-07-12 | 2017-06-05 | 靜電工作夾台、雷射加工裝置及被加工物的加工方法 |
KR1020170079667A KR102289802B1 (ko) | 2016-07-12 | 2017-06-23 | 정전 척 테이블, 레이저 가공 장치 및 피가공물의 가공 방법 |
CN201710555572.XA CN107611074B (zh) | 2016-07-12 | 2017-07-10 | 静电卡盘工作台、激光加工装置以及被加工物的加工方法 |
US15/645,462 US10490450B2 (en) | 2016-07-12 | 2017-07-10 | Electrostatic chuck table |
DE102017211833.4A DE102017211833B4 (de) | 2016-07-12 | 2017-07-11 | Elektrostatischer Einspanntisch, Laserbearbeitungsvorrichtung und Verfahren zum Bearbeiten eines Werkstücks |
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JP2016137984A JP6784527B2 (ja) | 2016-07-12 | 2016-07-12 | 静電チャックテーブル、レーザー加工装置及び被加工物の加工方法 |
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JP2018008286A true JP2018008286A (ja) | 2018-01-18 |
JP6784527B2 JP6784527B2 (ja) | 2020-11-11 |
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US (1) | US10490450B2 (ja) |
JP (1) | JP6784527B2 (ja) |
KR (1) | KR102289802B1 (ja) |
CN (1) | CN107611074B (ja) |
DE (1) | DE102017211833B4 (ja) |
TW (1) | TWI723172B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019197807A (ja) * | 2018-05-09 | 2019-11-14 | 株式会社ディスコ | 被加工物の加工方法 |
JP2021027071A (ja) * | 2019-07-31 | 2021-02-22 | 株式会社ディスコ | レーザー加工装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6815894B2 (ja) * | 2017-02-27 | 2021-01-20 | 株式会社ディスコ | 静電チャックテーブルの使用方法 |
CN116727845A (zh) * | 2017-10-25 | 2023-09-12 | 株式会社尼康 | 加工装置及移动体的制造方法 |
JP7217165B2 (ja) * | 2019-02-14 | 2023-02-02 | 株式会社ディスコ | チャックテーブル及び検査装置 |
JP7382762B2 (ja) * | 2019-08-27 | 2023-11-17 | 株式会社ディスコ | レーザー加工装置の加工結果の良否判定方法 |
CN111922470B (zh) * | 2020-07-08 | 2021-12-28 | 安徽工程大学 | 一种陶瓷板与金属制圆筒部件的焊接装置 |
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- 2016-07-12 JP JP2016137984A patent/JP6784527B2/ja active Active
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- 2017-06-05 TW TW106118506A patent/TWI723172B/zh active
- 2017-06-23 KR KR1020170079667A patent/KR102289802B1/ko active IP Right Grant
- 2017-07-10 CN CN201710555572.XA patent/CN107611074B/zh active Active
- 2017-07-10 US US15/645,462 patent/US10490450B2/en active Active
- 2017-07-11 DE DE102017211833.4A patent/DE102017211833B4/de active Active
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JP2019197807A (ja) * | 2018-05-09 | 2019-11-14 | 株式会社ディスコ | 被加工物の加工方法 |
JP2021027071A (ja) * | 2019-07-31 | 2021-02-22 | 株式会社ディスコ | レーザー加工装置 |
JP7358107B2 (ja) | 2019-07-31 | 2023-10-10 | 株式会社ディスコ | レーザー加工装置 |
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Publication number | Publication date |
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CN107611074A (zh) | 2018-01-19 |
CN107611074B (zh) | 2023-03-31 |
DE102017211833A1 (de) | 2018-01-18 |
DE102017211833B4 (de) | 2021-09-16 |
TWI723172B (zh) | 2021-04-01 |
TW201801839A (zh) | 2018-01-16 |
JP6784527B2 (ja) | 2020-11-11 |
KR102289802B1 (ko) | 2021-08-12 |
KR20180007305A (ko) | 2018-01-22 |
US10490450B2 (en) | 2019-11-26 |
US20180019168A1 (en) | 2018-01-18 |
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