JP2020527612A - セラミック材料の化学機械研磨のための酸化流体 - Google Patents
セラミック材料の化学機械研磨のための酸化流体 Download PDFInfo
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- JP2020527612A JP2020527612A JP2019564954A JP2019564954A JP2020527612A JP 2020527612 A JP2020527612 A JP 2020527612A JP 2019564954 A JP2019564954 A JP 2019564954A JP 2019564954 A JP2019564954 A JP 2019564954A JP 2020527612 A JP2020527612 A JP 2020527612A
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- 239000012530 fluid Substances 0.000 title claims abstract description 197
- 238000005498 polishing Methods 0.000 title claims abstract description 54
- 239000000126 substance Substances 0.000 title claims abstract description 17
- 230000001590 oxidative effect Effects 0.000 title claims description 80
- 229910010293 ceramic material Inorganic materials 0.000 title description 4
- 239000000203 mixture Substances 0.000 claims abstract description 114
- 239000007800 oxidant agent Substances 0.000 claims abstract description 104
- 150000001768 cations Chemical class 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 11
- 239000011147 inorganic material Substances 0.000 claims abstract description 11
- 238000007517 polishing process Methods 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 44
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- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 11
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 11
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 10
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 10
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- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 5
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- 125000000129 anionic group Chemical group 0.000 claims description 5
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- IIACRCGMVDHOTQ-UHFFFAOYSA-M sulfamate Chemical compound NS([O-])(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-M 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229940085991 phosphate ion Drugs 0.000 claims description 4
- 229940006163 selenate ion Drugs 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
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- 239000004753 textile Substances 0.000 claims description 3
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- 239000005995 Aluminium silicate Substances 0.000 description 1
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- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 235000012211 aluminium silicate Nutrition 0.000 description 1
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- XDYMOMWDVWJACM-UHFFFAOYSA-H cadmium(2+);trioxido(oxo)-$l^{5}-arsane Chemical compound [Cd+2].[Cd+2].[Cd+2].[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O XDYMOMWDVWJACM-UHFFFAOYSA-H 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- GDQXQVWVCVMMIE-UHFFFAOYSA-N dinitrooxyalumanyl nitrate hexahydrate Chemical compound O.O.O.O.O.O.[Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GDQXQVWVCVMMIE-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
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- IMBKASBLAKCLEM-UHFFFAOYSA-L ferrous ammonium sulfate (anhydrous) Chemical compound [NH4+].[NH4+].[Fe+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O IMBKASBLAKCLEM-UHFFFAOYSA-L 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
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- 238000010248 power generation Methods 0.000 description 1
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- 238000000518 rheometry Methods 0.000 description 1
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- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Abstract
Description
本出願は、2017年5月25日出願の米国仮出願62/511199の利益を主張するものであり、その全体の内容は、参照することにより本明細書に組み込まれる。
発明の分野
出願人は、無機固体などの材料の効率的な化学機械的研磨のための方法に使用できる流体組成物を発見した。本開示の流体は、少なくとも1つの酸化剤及び多価カチオン成分を含むことができる。CMPプロセス中に本明細書に開示される流体を使用すると、適切な材料除去速度を達成しながら、研磨後の比較的欠陥のない材料表面を促進することができる。
実験データ
実施態様
Claims (24)
- 溶媒;
0.4V以上の酸化電位を有する酸化剤;及び
多価カチオン成分
を含む化学機械研磨用の流体組成物。 - 多価カチオン成分が、Mn+2、Cu+2、Mg+2、Ba+2、Ag+2、Ni+2、Zn+2、Al+3、Fe+3、Cr+3、Co+3、Ce+4、Zr+4、又はSn+4を含む、請求項1に記載の流体組成物。
- 多価カチオン成分が、塩、酸、又は塩基である、請求項1に記載の流体組成物。
- 多価カチオン前記成分が、硝酸イオン、テトラフルオロホウ酸イオン、フルオロ硫酸イオン、ヘキサフルオロリン酸イオン、フルオロホスホン酸イオン、セレン酸イオン、硫酸イオン、リン酸イオン、塩化物イオン、フッ化物イオン、又はスルファミン酸イオンを含むアニオン成分を含む、請求項1に記載の流体組成物。
- 多価カチオン成分が硝酸アルミニウムを含む、請求項1に記載の流体組成物。
- 流体組成物中における多価カチオン成分の量が0.05〜0.75重量%である、請求項1に記載の流体組成物。
- 多価カチオン成分が遊離作用イオン又は複合体の一部である、請求項1に記載の流体組成物。
- 酸化剤が、過マンガン酸、塩素、臭素、又はヨウ素のオキソハロゲン化物、過酸化物、過硫酸、クロム酸、Ce+4、及びCo+3のイオン、塩、酸、又は塩基である、請求項1に記載の流体組成物。
- 酸化剤が、過マンガン酸又はCeの+4のイオン、塩、酸、又は塩基を含む、請求項1に記載の流体組成物。
- 酸化剤が、過マンガン酸ナトリウム又は過マンガン酸カリウムを含む、請求項1に記載の流体組成物。
- 流体組成物中の酸化剤の量が0.5〜5重量%である、請求項1に記載の流体組成物。
- 第1の酸化剤よりも高い酸化電位を有する第2の酸化剤をさらに含む、請求項1に記載の流体組成物。
- 第2の酸化剤が、過硫酸、鉄酸、塩素、臭素、又はヨウ素のオキソハロゲン化物、有機過酸化物、クロム酸、Ce+4、及びCo+3のイオン、塩、酸、又は塩基を含む、請求項12に記載の流体組成物。
- 第2の酸化剤が、過硫酸ナトリウム又は過硫酸カリウムを含む、請求項12に記載の流体組成物。
- 流体組成物中の第2の酸化剤の量が0.1〜0.5重量%である、請求項12に記載の流体組成物。
- 流体組成物が研磨粒子を実質的に含まない、請求項1に記載の流体組成物。
- 溶媒が水である、請求項1に記載の流体組成物。
- 溶媒;
0.4V以上の酸化電位を有する第1の酸化剤;
第1の酸化剤よりも高い酸化電位を有する第2の酸化剤;及び
多価カチオン成分
を含む化学機械研磨用の流体組成物。 - 請求項1〜18の流体組成物を研磨パッドに適用するステップ;及び
研磨パッドで無機材料を研磨するステップ
を含む、無機材料を研磨する方法。 - 無機材料が、炭化ケイ素、窒化ガリウム、ヒ化ガリウム、窒化アルミニウム、リン化インジウム、テルル化カドミウム、テルル化亜鉛、セレン化亜鉛、ヒ化カドミウム、テルル化ビスマス、又はそれらの組み合わせを含む、請求項19に記載の方法。
- 無機材料が、周期表の単一の14族元素又は周期表の単一の16族元素である、請求項19に記載の方法。
- 研磨パッドが、繊維製品、ポリウレタン、ポリエチレン、ポリエステル、ポリ塩化ビニル、ポリカーボネート、ポリアミド、ポリアクリレート、ポリスチレン、ポリプロピレン、ナイロン、又はそれらの組み合わせを含む、請求項19に記載の方法。
- 研磨無機材料が、5オングストローム未満の全表面粗さを有する、請求項19に記載の方法。
- 研磨の材料除去速度が0.2ミクロン/時間より大きい、請求項19に記載の方法。
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PCT/US2018/034318 WO2018217978A1 (en) | 2017-05-25 | 2018-05-24 | Oxidizing fluid for the chemical-mechanical polishing of ceramic materials |
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