JP2020515047A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020515047A5 JP2020515047A5 JP2019536103A JP2019536103A JP2020515047A5 JP 2020515047 A5 JP2020515047 A5 JP 2020515047A5 JP 2019536103 A JP2019536103 A JP 2019536103A JP 2019536103 A JP2019536103 A JP 2019536103A JP 2020515047 A5 JP2020515047 A5 JP 2020515047A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- iodine
- selectivity
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 229910052740 iodine Inorganic materials 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011630 iodine Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- FEJGXYOLCAYRJW-OWOJBTEDSA-N (e)-1,2-difluoro-1-iodoethene Chemical compound F\C=C(/F)I FEJGXYOLCAYRJW-OWOJBTEDSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 101001015052 Zea mays Trypsin/factor XIIA inhibitor Proteins 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023018581A JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/396,220 | 2016-12-30 | ||
| US15/396,220 US10607850B2 (en) | 2016-12-30 | 2016-12-30 | Iodine-containing compounds for etching semiconductor structures |
| PCT/US2017/069085 WO2018126206A1 (en) | 2016-12-30 | 2017-12-29 | Iodine-containing compounds for etching semiconductor structures |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023018581A Division JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020515047A JP2020515047A (ja) | 2020-05-21 |
| JP2020515047A5 true JP2020515047A5 (https=) | 2021-02-12 |
| JP7227135B2 JP7227135B2 (ja) | 2023-02-21 |
Family
ID=59066602
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019536103A Active JP7227135B2 (ja) | 2016-12-30 | 2017-12-29 | 半導体構造エッチング用ヨウ素含有化合物 |
| JP2023018581A Active JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023018581A Active JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10607850B2 (https=) |
| EP (1) | EP3563406B1 (https=) |
| JP (2) | JP7227135B2 (https=) |
| KR (2) | KR102626466B1 (https=) |
| CN (2) | CN110178206B (https=) |
| TW (2) | TWI756330B (https=) |
| WO (1) | WO2018126206A1 (https=) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180277387A1 (en) * | 2014-08-06 | 2018-09-27 | American Air Liquide, Inc. | Gases for low damage selective silicon nitride etching |
| US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| US10446681B2 (en) | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
| US10276398B2 (en) * | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
| DE102017128070B4 (de) * | 2017-08-31 | 2023-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ätzen zum Verringern von Bahnunregelmässigkeiten |
| JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2019050305A (ja) * | 2017-09-11 | 2019-03-28 | 東芝メモリ株式会社 | プラズマエッチング方法、及び、半導体装置の製造方法 |
| US10297611B1 (en) | 2017-12-27 | 2019-05-21 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
| US10559466B2 (en) | 2017-12-27 | 2020-02-11 | Micron Technology, Inc. | Methods of forming a channel region of a transistor and methods used in forming a memory array |
| US10529581B2 (en) * | 2017-12-29 | 2020-01-07 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications |
| JP7209567B2 (ja) * | 2018-07-30 | 2023-01-20 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| KR102272823B1 (ko) * | 2018-07-30 | 2021-07-02 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
| WO2020129725A1 (ja) * | 2018-12-21 | 2020-06-25 | 昭和電工株式会社 | ハロゲンフッ化物によるエッチング方法、半導体の製造方法 |
| US11145504B2 (en) * | 2019-01-14 | 2021-10-12 | Applied Materials, Inc. | Method of forming film stacks with reduced defects |
| US12100600B2 (en) * | 2019-01-23 | 2024-09-24 | Central Glass Company, Limited | Dry etching method, and dry etching agent and storage container therefor |
| US10629451B1 (en) * | 2019-02-01 | 2020-04-21 | American Air Liquide, Inc. | Method to improve profile control during selective etching of silicon nitride spacers |
| US10978473B2 (en) * | 2019-02-12 | 2021-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash memory structure and method of forming the same |
| CN113614891A (zh) * | 2019-03-22 | 2021-11-05 | 中央硝子株式会社 | 干蚀刻方法及半导体装置的制造方法 |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| US11521846B2 (en) * | 2019-12-16 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company Limited | Methods for patterning a silicon oxide-silicon nitride-silicon oxide stack and structures formed by the same |
| KR102664702B1 (ko) * | 2020-02-14 | 2024-05-09 | 한양대학교 산학협력단 | 식각 선택비의 조절에 의한 미세패턴의 형성방법 |
| FR3107280B1 (fr) * | 2020-02-19 | 2023-01-13 | Arkema France | Composition comprenant un composé iodofluorocarbure |
| JP2021163839A (ja) * | 2020-03-31 | 2021-10-11 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| TWI899193B (zh) * | 2020-04-30 | 2025-10-01 | 日商東京威力科創股份有限公司 | 基板處理方法及電漿處理裝置 |
| US11798811B2 (en) * | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
| US20230386851A1 (en) * | 2020-10-15 | 2023-11-30 | Resonac Corporation | Etching gas, etching method, and method for producing semiconductor device |
| US12106971B2 (en) * | 2020-12-28 | 2024-10-01 | American Air Liquide, Inc. | High conductive passivation layers and method of forming the same during high aspect ratio plasma etching |
| US11538919B2 (en) | 2021-02-23 | 2022-12-27 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
| KR20220122260A (ko) * | 2021-02-26 | 2022-09-02 | 에스케이스페셜티 주식회사 | 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법 |
| KR20220126045A (ko) * | 2021-03-08 | 2022-09-15 | 에스케이스페셜티 주식회사 | 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법 |
| US20220293430A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Isotropic silicon nitride removal |
| JP7638119B2 (ja) * | 2021-03-15 | 2025-03-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| CN114023879B (zh) * | 2021-10-20 | 2025-02-11 | 上海华虹宏力半导体制造有限公司 | 表面粗糙的多晶硅结构的刻蚀方法 |
| US12188123B2 (en) | 2021-12-17 | 2025-01-07 | American Air Liquide, Inc. | Deposition of iodine-containing carbon films |
| US12272562B2 (en) * | 2021-12-17 | 2025-04-08 | L'Aire Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Oxygen and iodine-containing hydrofluorocarbon compound for etching semiconductor structures |
| EP4540856A4 (en) * | 2022-06-14 | 2026-03-25 | Air Liquide | SIDE WALL PASSIVATION LAYERS AND THEIR FORMATION PROCESS DURING HIGH ASPECT RATIO PLASMA ETCHING |
| US20260076118A1 (en) * | 2022-09-13 | 2026-03-12 | Lam Research Corporation | Method for etching features in a stack |
| WO2024059467A1 (en) * | 2022-09-13 | 2024-03-21 | Lam Research Corporation | Method for etching features using hf gas |
| WO2025117301A1 (en) * | 2023-11-27 | 2025-06-05 | Lam Research Corporation | SELECTIVE ETCH OF STACK USING A HYDROGEN CONTAINING COMPONENT AND AT LEAST ONE OF SeF6, AND IF7 AND TeF6 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3371143B2 (ja) * | 1991-06-03 | 2003-01-27 | ソニー株式会社 | ドライエッチング方法 |
| EP0854502A3 (en) * | 1997-01-21 | 1998-09-02 | Texas Instruments Incorporated | Iodofluorocarbon gas for the etching of dielectric layers and the cleaning of process chambers |
| JPH10223614A (ja) | 1997-02-12 | 1998-08-21 | Daikin Ind Ltd | エッチングガスおよびクリーニングガス |
| JP3559691B2 (ja) * | 1997-09-04 | 2004-09-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US6387287B1 (en) | 1998-03-27 | 2002-05-14 | Applied Materials, Inc. | Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window |
| JP3570903B2 (ja) | 1998-09-25 | 2004-09-29 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP5407101B2 (ja) * | 2000-09-07 | 2014-02-05 | ダイキン工業株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| KR100874813B1 (ko) | 2000-11-08 | 2008-12-19 | 다이킨 고교 가부시키가이샤 | 드라이 에칭 가스 및 드라이 에칭 방법 |
| JP2002319574A (ja) * | 2001-04-23 | 2002-10-31 | Nec Corp | 窒化シリコン膜の除去方法 |
| US6921725B2 (en) * | 2001-06-28 | 2005-07-26 | Micron Technology, Inc. | Etching of high aspect ratio structures |
| US7547635B2 (en) * | 2002-06-14 | 2009-06-16 | Lam Research Corporation | Process for etching dielectric films with improved resist and/or etch profile characteristics |
| CN100342952C (zh) * | 2003-01-29 | 2007-10-17 | 昭和电工株式会社 | 分解氟化合物的方法 |
| US20050241671A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for removing a substance from a substrate using electron attachment |
| JP4761502B2 (ja) | 2004-10-07 | 2011-08-31 | 株式会社アルバック | 層間絶縁膜のドライエッチング方法 |
| US20090191715A1 (en) * | 2006-03-09 | 2009-07-30 | Toshio Hayashi | Method for etching interlayer dielectric film |
| TW200735206A (en) | 2006-03-10 | 2007-09-16 | Philtech Inc | Method of dry etching of interlayer insulation film and etching device |
| US8125069B2 (en) * | 2006-04-07 | 2012-02-28 | Philtech Inc. | Semiconductor device and etching apparatus |
| US7517804B2 (en) | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
| US20080191163A1 (en) | 2007-02-09 | 2008-08-14 | Mocella Michael T | Laser-Assisted Etching Using Gas Compositions Comprising Unsaturated Fluorocarbons |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| JP4982443B2 (ja) | 2008-07-14 | 2012-07-25 | 株式会社アルバック | 層間絶縁膜のドライエッチング方法 |
| US8372756B2 (en) * | 2008-08-29 | 2013-02-12 | Air Products And Chemicals, Inc. | Selective etching of silicon dioxide compositions |
| WO2011031860A1 (en) * | 2009-09-10 | 2011-03-17 | Matheson Tri-Gas, Inc. | Nf3 chamber clean additive |
| JP2011071223A (ja) * | 2009-09-24 | 2011-04-07 | Ulvac Japan Ltd | ドライエッチング方法 |
| KR101660488B1 (ko) | 2010-01-22 | 2016-09-28 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
| US9368363B2 (en) | 2011-03-17 | 2016-06-14 | Zeon Corporation | Etching gas and etching method |
| US8603921B2 (en) * | 2011-07-25 | 2013-12-10 | Applied Materials, Inc. | Maintaining mask integrity to form openings in wafers |
| US8512586B2 (en) | 2011-09-01 | 2013-08-20 | Tel Epion Inc. | Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials |
| US20150270135A1 (en) * | 2011-09-01 | 2015-09-24 | Tel Epion Inc. | Gas cluster ion beam etching process |
| KR102153246B1 (ko) * | 2012-10-30 | 2020-09-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스 |
| TWI642809B (zh) * | 2013-09-09 | 2018-12-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
| KR102333443B1 (ko) | 2014-10-24 | 2021-12-02 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| JP6544215B2 (ja) * | 2015-01-23 | 2019-07-17 | セントラル硝子株式会社 | ドライエッチング方法 |
| US9728422B2 (en) | 2015-01-23 | 2017-08-08 | Central Glass Company, Limited | Dry etching method |
| US9659788B2 (en) * | 2015-08-31 | 2017-05-23 | American Air Liquide, Inc. | Nitrogen-containing compounds for etching semiconductor structures |
| US10607850B2 (en) | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
-
2016
- 2016-12-30 US US15/396,220 patent/US10607850B2/en active Active
-
2017
- 2017-12-21 TW TW106145082A patent/TWI756330B/zh active
- 2017-12-21 TW TW111112039A patent/TWI887536B/zh active
- 2017-12-29 CN CN201780081811.0A patent/CN110178206B/zh active Active
- 2017-12-29 KR KR1020237016440A patent/KR102626466B1/ko active Active
- 2017-12-29 KR KR1020197020788A patent/KR102537653B1/ko active Active
- 2017-12-29 CN CN202311017020.5A patent/CN116884838A/zh active Pending
- 2017-12-29 JP JP2019536103A patent/JP7227135B2/ja active Active
- 2017-12-29 WO PCT/US2017/069085 patent/WO2018126206A1/en not_active Ceased
- 2017-12-29 EP EP17889218.8A patent/EP3563406B1/en active Active
-
2020
- 2020-03-03 US US16/807,247 patent/US11430663B2/en active Active
-
2023
- 2023-02-09 JP JP2023018581A patent/JP7470834B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2020515047A5 (https=) | ||
| JP7026237B2 (ja) | ３Ｄ ＮＡＮＤデバイスアプリケーションのための非プラズマ乾式処理によるＳｉＯ２に対するＳｉＮ選択的エッチング | |
| JP7470834B2 (ja) | 半導体構造エッチング用ヨウ素含有化合物 | |
| JP7079872B2 (ja) | 半導体構造物上に窒素含有化合物を堆積させる方法 | |
| JP6811284B2 (ja) | ３ｄ ｎａｎｄフラッシュメモリの製造方法 | |
| JP7830598B2 (ja) | 窒化ケイ素スペーサーの選択的エッチング中の形状制御を改善する方法 | |
| TWI766866B (zh) | 蝕刻方法 | |
| JP2003518738A (ja) | シリコンの金属マスクエッチング方法 | |
| KR20210023906A (ko) | 황 원자를 함유하는 가스 분자를 사용한 플라즈마 에칭 방법 | |
| WO2012124726A1 (ja) | エッチングガスおよびエッチング方法 | |
| JP2005268292A (ja) | 半導体装置の製造方法 | |
| TWI914748B (zh) | 使用含矽氫氟烴之蝕刻方法 | |
| JP6569578B2 (ja) | プラズマエッチング方法 | |
| TWI921757B (zh) | 使用含矽氫氟烴之蝕刻方法 | |
| TWI914747B (zh) | 使用含矽氫氟烴之蝕刻方法 | |
| TWI913690B (zh) | 使用含矽氫氟烴之蝕刻方法 | |
| US20250079127A1 (en) | Dielectric plasma etching using c2h2f2 |