JP2020511598A5 - - Google Patents
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- JP2020511598A5 JP2020511598A5 JP2019546353A JP2019546353A JP2020511598A5 JP 2020511598 A5 JP2020511598 A5 JP 2020511598A5 JP 2019546353 A JP2019546353 A JP 2019546353A JP 2019546353 A JP2019546353 A JP 2019546353A JP 2020511598 A5 JP2020511598 A5 JP 2020511598A5
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- 239000000843 powder Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 9
- 239000000919 ceramic Substances 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 7
- 239000011159 matrix material Substances 0.000 claims 7
- 239000011651 chromium Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000010936 titanium Substances 0.000 claims 6
- 229910000838 Al alloy Inorganic materials 0.000 claims 5
- 229910052684 Cerium Inorganic materials 0.000 claims 5
- 229910052804 chromium Inorganic materials 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 238000004663 powder metallurgy Methods 0.000 claims 5
- 229910052719 titanium Inorganic materials 0.000 claims 5
- 229910052746 lanthanum Inorganic materials 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 238000005240 physical vapour deposition Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 229910052720 vanadium Inorganic materials 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- 229910052693 Europium Inorganic materials 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- 229910052772 Samarium Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims 2
- 150000002602 lanthanoids Chemical class 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- WNZJIYLDCAPFOW-UHFFFAOYSA-N cerium(3+);trioxido(trioxidosilyloxy)silane Chemical compound [Ce+3].[Ce+3].[O-][Si]([O-])([O-])O[Si]([O-])([O-])[O-] WNZJIYLDCAPFOW-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 150000002603 lanthanum Chemical class 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM46/2017U AT15596U1 (de) | 2017-02-28 | 2017-02-28 | Sputtertarget und Verfahren zur Herstellung eines Sputtertargets |
| ATGM46/2017 | 2017-02-28 | ||
| PCT/EP2018/054041 WO2018158101A1 (de) | 2017-02-28 | 2018-02-19 | Sputtertarget und verfahren zur herstellung eines sputtertargets |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020511598A JP2020511598A (ja) | 2020-04-16 |
| JP2020511598A5 true JP2020511598A5 (enExample) | 2021-01-28 |
| JP7198211B2 JP7198211B2 (ja) | 2022-12-28 |
Family
ID=61597335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019546353A Active JP7198211B2 (ja) | 2017-02-28 | 2018-02-19 | スパッタターゲット、及びスパッタターゲットの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11767587B2 (enExample) |
| EP (1) | EP3589773B1 (enExample) |
| JP (1) | JP7198211B2 (enExample) |
| KR (1) | KR20190117556A (enExample) |
| CN (1) | CN110536974B (enExample) |
| AT (1) | AT15596U1 (enExample) |
| WO (1) | WO2018158101A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3547333B1 (en) * | 2016-12-21 | 2022-05-18 | Baotou Research Institute of Rare Earths | Method for preparing neodymium-iron-boron permanent magnetic material |
| CH718110B1 (de) * | 2019-10-15 | 2024-07-15 | Univ Guangdong Technology | Beschichtetes Schneidwerkzeug zum Bearbeiten von Titanlegierungen und Superlegierungen und Herstellungsverfahren hierfür. |
| CN111188016B (zh) * | 2019-12-30 | 2023-07-04 | 苏州六九新材料科技有限公司 | 一种高性能CrAlSiX合金靶材及其制备方法 |
| CN111057905B (zh) * | 2020-01-13 | 2022-03-04 | 西安理工大学 | 一种粉末冶金制备铌钛合金的方法 |
| CN112063893B (zh) * | 2020-09-29 | 2021-12-10 | 中国科学院金属研究所 | 一种高热稳定性等轴纳米晶Ti6Al4V-Fe合金及其制备方法 |
| CN112962069B (zh) * | 2021-02-02 | 2023-04-28 | 长沙淮石新材料科技有限公司 | 一种含金属间化合物的铝合金靶材及其制备方法 |
| CN114727467B (zh) * | 2022-04-13 | 2023-06-16 | 中国科学技术大学 | 一种组合式直热六硼化镧等离子体源 |
| CN114934259A (zh) * | 2022-05-06 | 2022-08-23 | 有研工程技术研究院有限公司 | 一种多元混合涂层用高强韧铝基复合靶材及其制备方法 |
| CN116904942A (zh) * | 2023-08-01 | 2023-10-20 | 苏州六九新材料科技有限公司 | 一种铝基合金靶材及其制备方法 |
| CN120158641B (zh) * | 2025-05-19 | 2025-08-15 | 崇义章源钨业股份有限公司 | 一种高韧性硬质合金及其制备方法和应用 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT386612B (de) * | 1987-01-28 | 1988-09-26 | Plansee Metallwerk | Kriechfeste legierung aus hochschmelzendem metall und verfahren zu ihrer herstellung |
| JPH0384402A (ja) | 1989-08-28 | 1991-04-10 | Yokohama Haitetsuku Kk | 曲面形状測定装置 |
| JPH07157835A (ja) | 1993-12-02 | 1995-06-20 | Nippon Tungsten Co Ltd | 焼結チタン・アルミニウム合金とその製造方法 |
| JP2860064B2 (ja) * | 1994-10-17 | 1999-02-24 | 株式会社神戸製鋼所 | Ｔｉ−Ａｌ合金ターゲット材の製造方法 |
| JPH08151269A (ja) * | 1994-11-28 | 1996-06-11 | Tokuyama Corp | 熱電変換材料 |
| US20020014406A1 (en) * | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
| JP3825191B2 (ja) | 1998-12-28 | 2006-09-20 | 株式会社神戸製鋼所 | アルミニウム合金スパッタリングターゲット材料 |
| JP3084402B1 (ja) | 1999-04-14 | 2000-09-04 | 工業技術院長 | ＡｌＴｉ系合金スパッタリングターゲット及び耐摩耗性ＡｌＴｉ系合金硬質皮膜並びに同皮膜の形成方法 |
| JP2001181838A (ja) | 1999-12-22 | 2001-07-03 | Toppan Printing Co Ltd | 真空成膜装置 |
| JP4608090B2 (ja) | 2000-12-27 | 2011-01-05 | 三井金属鉱業株式会社 | 低酸素スパッタリングターゲット |
| JP4603841B2 (ja) | 2004-09-29 | 2010-12-22 | 株式会社アライドマテリアル | 耐酸化性を有するタングステン合金とその製造方法 |
| FR2881757B1 (fr) * | 2005-02-08 | 2007-03-30 | Saint Gobain | Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium |
| GB2425780B (en) * | 2005-04-27 | 2007-09-05 | Univ Sheffield Hallam | PVD coated substrate |
| US20090008786A1 (en) | 2006-03-06 | 2009-01-08 | Tosoh Smd, Inc. | Sputtering Target |
| CN101285165A (zh) * | 2007-04-11 | 2008-10-15 | 北京京东方光电科技有限公司 | Tft lcd电极薄膜制备所用的靶材及靶材和电极薄膜制备方法 |
| US20090186230A1 (en) * | 2007-10-24 | 2009-07-23 | H.C. Starck Inc. | Refractory metal-doped sputtering targets, thin films prepared therewith and electronic device elements containing such films |
| JP2009215617A (ja) * | 2008-03-11 | 2009-09-24 | Mitsui Mining & Smelting Co Ltd | コバルト、クロム、および白金からなるマトリックス相と酸化物相とを含有するスパッタリングターゲット材およびその製造方法 |
| US8389108B2 (en) * | 2008-04-30 | 2013-03-05 | Sumitomo Electric Industries, Ltd. | Surface coated cutting tool |
| WO2009142223A1 (ja) * | 2008-05-22 | 2009-11-26 | キヤノンアネルバ株式会社 | スパッタリング用ターゲット、薄膜の製造法及び表示装置 |
| WO2011062450A2 (ko) | 2009-11-19 | 2011-05-26 | 한국생산기술연구원 | 다성분 단일체의 스퍼터링 타겟 및 그 제조방법, 이를 이용한 다성분 합금계 나노구조 박막 제조방법 |
| CN101962721A (zh) | 2010-11-02 | 2011-02-02 | 中南大学 | 一种粉末冶金钛合金及其制备方法 |
| CN102041474B (zh) * | 2010-12-20 | 2013-03-06 | 昆明理工大学 | 纳米贵金属颗粒改性二氧化锡气敏材料的制备方法 |
| CN102905495A (zh) * | 2011-07-29 | 2013-01-30 | 鸿富锦精密工业（深圳）有限公司 | 壳体及其制备方法 |
| JP2013067835A (ja) | 2011-09-22 | 2013-04-18 | Spm Ag Semiconductor Parts & Materials | スパッタリングターゲット、トランジスタ、焼結体の製造方法、トランジスタの製造方法、電子部品または電気機器、液晶表示素子、有機ｅｌディスプレイ用パネル、太陽電池、半導体素子および発光ダイオード素子 |
| DE102012023260A1 (de) * | 2012-11-29 | 2014-06-05 | Oerlikon Trading Ag, Trübbach | Verfahren zur Strukturierung von Schichtoberflächen und Vorrichtung dazu |
| CN104183790A (zh) | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
| AT14346U1 (de) * | 2014-07-08 | 2015-09-15 | Plansee Se | Target und Verfahren zur Herstellung eines Targets |
| CN104451277B (zh) * | 2014-12-30 | 2017-02-15 | 山东昊轩电子陶瓷材料有限公司 | 铬铝合金靶材及其制备方法 |
| CN104480444A (zh) | 2014-12-30 | 2015-04-01 | 山东昊轩电子陶瓷材料有限公司 | 钛铝合金靶材及其制备方法 |
| JP6680995B2 (ja) | 2015-03-26 | 2020-04-15 | 三菱マテリアル株式会社 | 窒化物熱電変換材料及びその製造方法並びに熱電変換素子 |
| CN106319454A (zh) | 2015-06-15 | 2017-01-11 | 中国科学院金属研究所 | 梯度MCrAlX涂层单靶电弧离子镀一步制备方法 |
-
2017
- 2017-02-28 AT ATGM46/2017U patent/AT15596U1/de unknown
-
2018
- 2018-02-19 CN CN201880013575.3A patent/CN110536974B/zh active Active
- 2018-02-19 US US16/489,435 patent/US11767587B2/en active Active
- 2018-02-19 WO PCT/EP2018/054041 patent/WO2018158101A1/de not_active Ceased
- 2018-02-19 KR KR1020197024720A patent/KR20190117556A/ko not_active Ceased
- 2018-02-19 EP EP18706710.3A patent/EP3589773B1/de active Active
- 2018-02-19 JP JP2019546353A patent/JP7198211B2/ja active Active
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