AT15596U1 - Sputtertarget und Verfahren zur Herstellung eines Sputtertargets - Google Patents

Sputtertarget und Verfahren zur Herstellung eines Sputtertargets Download PDF

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Publication number
AT15596U1
AT15596U1 ATGM46/2017U AT462017U AT15596U1 AT 15596 U1 AT15596 U1 AT 15596U1 AT 462017 U AT462017 U AT 462017U AT 15596 U1 AT15596 U1 AT 15596U1
Authority
AT
Austria
Prior art keywords
target
elements
equal
based material
target according
Prior art date
Application number
ATGM46/2017U
Other languages
German (de)
English (en)
Inventor
Polcik Peter
Kolozsvari Szilard
Mayrhofer Paul
Riedl Helmut
Original Assignee
Plansee Composite Mat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plansee Composite Mat Gmbh filed Critical Plansee Composite Mat Gmbh
Priority to ATGM46/2017U priority Critical patent/AT15596U1/de
Priority to KR1020197024720A priority patent/KR20190117556A/ko
Priority to JP2019546353A priority patent/JP7198211B2/ja
Priority to US16/489,435 priority patent/US11767587B2/en
Priority to CN201880013575.3A priority patent/CN110536974B/zh
Priority to EP18706710.3A priority patent/EP3589773B1/de
Priority to PCT/EP2018/054041 priority patent/WO2018158101A1/de
Publication of AT15596U1 publication Critical patent/AT15596U1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C14/00Alloys based on titanium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C29/00Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/005Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides comprising a particular metallic binder
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C30/00Alloys containing less than 50% by weight of each constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0073Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only borides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00Metallic composition of the powder or its coating
    • B22F2301/20Refractory metals
    • B22F2301/205Titanium, zirconium or hafnium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/17Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by forging
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • C22C21/003Alloys based on aluminium containing at least 2.6% of one or more of the elements: tin, lead, antimony, bismuth, cadmium, and titanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
ATGM46/2017U 2017-02-28 2017-02-28 Sputtertarget und Verfahren zur Herstellung eines Sputtertargets AT15596U1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
ATGM46/2017U AT15596U1 (de) 2017-02-28 2017-02-28 Sputtertarget und Verfahren zur Herstellung eines Sputtertargets
KR1020197024720A KR20190117556A (ko) 2017-02-28 2018-02-19 스퍼터링 타깃 및 스퍼터링 타깃을 제조하기 위한 방법
JP2019546353A JP7198211B2 (ja) 2017-02-28 2018-02-19 スパッタターゲット、及びスパッタターゲットの製造方法
US16/489,435 US11767587B2 (en) 2017-02-28 2018-02-19 Sputter target and method for producing a sputter target
CN201880013575.3A CN110536974B (zh) 2017-02-28 2018-02-19 溅射靶和生产溅射靶的方法
EP18706710.3A EP3589773B1 (de) 2017-02-28 2018-02-19 Sputtertarget und verfahren zur herstellung eines sputtertargets
PCT/EP2018/054041 WO2018158101A1 (de) 2017-02-28 2018-02-19 Sputtertarget und verfahren zur herstellung eines sputtertargets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ATGM46/2017U AT15596U1 (de) 2017-02-28 2017-02-28 Sputtertarget und Verfahren zur Herstellung eines Sputtertargets

Publications (1)

Publication Number Publication Date
AT15596U1 true AT15596U1 (de) 2018-03-15

Family

ID=61597335

Family Applications (1)

Application Number Title Priority Date Filing Date
ATGM46/2017U AT15596U1 (de) 2017-02-28 2017-02-28 Sputtertarget und Verfahren zur Herstellung eines Sputtertargets

Country Status (7)

Country Link
US (1) US11767587B2 (enExample)
EP (1) EP3589773B1 (enExample)
JP (1) JP7198211B2 (enExample)
KR (1) KR20190117556A (enExample)
CN (1) CN110536974B (enExample)
AT (1) AT15596U1 (enExample)
WO (1) WO2018158101A1 (enExample)

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* Cited by examiner, † Cited by third party
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EP3547333B1 (en) * 2016-12-21 2022-05-18 Baotou Research Institute of Rare Earths Method for preparing neodymium-iron-boron permanent magnetic material
CH718110B1 (de) * 2019-10-15 2024-07-15 Univ Guangdong Technology Beschichtetes Schneidwerkzeug zum Bearbeiten von Titanlegierungen und Superlegierungen und Herstellungsverfahren hierfür.
CN111188016B (zh) * 2019-12-30 2023-07-04 苏州六九新材料科技有限公司 一种高性能CrAlSiX合金靶材及其制备方法
CN111057905B (zh) * 2020-01-13 2022-03-04 西安理工大学 一种粉末冶金制备铌钛合金的方法
CN112063893B (zh) * 2020-09-29 2021-12-10 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti6Al4V-Fe合金及其制备方法
CN112962069B (zh) * 2021-02-02 2023-04-28 长沙淮石新材料科技有限公司 一种含金属间化合物的铝合金靶材及其制备方法
CN114727467B (zh) * 2022-04-13 2023-06-16 中国科学技术大学 一种组合式直热六硼化镧等离子体源
CN114934259A (zh) * 2022-05-06 2022-08-23 有研工程技术研究院有限公司 一种多元混合涂层用高强韧铝基复合靶材及其制备方法
CN116904942A (zh) * 2023-08-01 2023-10-20 苏州六九新材料科技有限公司 一种铝基合金靶材及其制备方法
CN120158641B (zh) * 2025-05-19 2025-08-15 崇义章源钨业股份有限公司 一种高韧性硬质合金及其制备方法和应用

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020014406A1 (en) * 1998-05-21 2002-02-07 Hiroshi Takashima Aluminum target material for sputtering and method for producing same
US20080253925A1 (en) * 2007-04-11 2008-10-16 Beijing Boe Optoelectronics Technology Co., Ltd Target material for electrode film, methods of manufacturing the target material and electrode film
US20090229976A1 (en) * 2008-03-11 2009-09-17 Mitsui Mining & Smelting Co., Ltd. Sputtering Target Material Containing Cobalt/Chromium/Platinum Matrix Phase and Oxide Phase, and Process for Producing the Same

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JPH0384402A (ja) 1989-08-28 1991-04-10 Yokohama Haitetsuku Kk 曲面形状測定装置
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Publication number Priority date Publication date Assignee Title
US20020014406A1 (en) * 1998-05-21 2002-02-07 Hiroshi Takashima Aluminum target material for sputtering and method for producing same
US20080253925A1 (en) * 2007-04-11 2008-10-16 Beijing Boe Optoelectronics Technology Co., Ltd Target material for electrode film, methods of manufacturing the target material and electrode film
US20090229976A1 (en) * 2008-03-11 2009-09-17 Mitsui Mining & Smelting Co., Ltd. Sputtering Target Material Containing Cobalt/Chromium/Platinum Matrix Phase and Oxide Phase, and Process for Producing the Same

Also Published As

Publication number Publication date
JP2020511598A (ja) 2020-04-16
EP3589773A1 (de) 2020-01-08
US20190368029A1 (en) 2019-12-05
EP3589773B1 (de) 2023-04-05
US11767587B2 (en) 2023-09-26
JP7198211B2 (ja) 2022-12-28
CN110536974A (zh) 2019-12-03
KR20190117556A (ko) 2019-10-16
CN110536974B (zh) 2022-03-04
WO2018158101A1 (de) 2018-09-07

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