JP2020509574A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020509574A5 JP2020509574A5 JP2019534947A JP2019534947A JP2020509574A5 JP 2020509574 A5 JP2020509574 A5 JP 2020509574A5 JP 2019534947 A JP2019534947 A JP 2019534947A JP 2019534947 A JP2019534947 A JP 2019534947A JP 2020509574 A5 JP2020509574 A5 JP 2020509574A5
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- conductive material
- oxide
- oxide material
- alkali metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 32
- 239000004020 conductor Substances 0.000 claims 28
- 229910052783 alkali metal Inorganic materials 0.000 claims 14
- 150000001340 alkali metals Chemical class 0.000 claims 14
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 6
- 239000003513 alkali Substances 0.000 claims 5
- 229910045601 alloy Inorganic materials 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 238000009830 intercalation Methods 0.000 claims 3
- 230000002687 intercalation Effects 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000573 alkali metal alloy Inorganic materials 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/405,555 US10164179B2 (en) | 2017-01-13 | 2017-01-13 | Memristive device based on alkali-doping of transitional metal oxides |
| US15/405,555 | 2017-01-13 | ||
| PCT/IB2018/050033 WO2018130914A1 (en) | 2017-01-13 | 2018-01-03 | Memristive device based on alkali-doping of transitional metal oxides |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020509574A JP2020509574A (ja) | 2020-03-26 |
| JP2020509574A5 true JP2020509574A5 (enExample) | 2021-02-12 |
| JP6921961B2 JP6921961B2 (ja) | 2021-08-18 |
Family
ID=62839301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019534947A Active JP6921961B2 (ja) | 2017-01-13 | 2018-01-03 | メモリスティブ・デバイスおよびその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10164179B2 (enExample) |
| JP (1) | JP6921961B2 (enExample) |
| CN (1) | CN110168761A (enExample) |
| DE (1) | DE112018000134T5 (enExample) |
| GB (1) | GB2573693A (enExample) |
| WO (1) | WO2018130914A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017222592A1 (en) | 2016-06-20 | 2017-12-28 | Massachusetts Institute Of Technology | Apparatus and methods for electrical switching |
| US10127494B1 (en) * | 2017-08-02 | 2018-11-13 | Google Llc | Neural network crossbar stack |
| US11455521B2 (en) | 2019-03-01 | 2022-09-27 | International Business Machines Corporation | Neuromorphic device driven by copper ion intercalation |
| US11079958B2 (en) | 2019-04-12 | 2021-08-03 | Intel Corporation | Apparatus, system and method for offloading data transfer operations between source and destination storage devices to a hardware accelerator |
| US11250315B2 (en) | 2019-10-29 | 2022-02-15 | International Business Machines Corporation | Electrochemical device of variable electrical conductance |
| US11552246B2 (en) | 2020-01-21 | 2023-01-10 | Massachusetts Institute Of Technology | Memristors and related systems and methods |
| US11742901B2 (en) * | 2020-07-27 | 2023-08-29 | Electronics And Telecommunications Research Institute | Deep learning based beamforming method and apparatus |
| US11397544B2 (en) | 2020-11-10 | 2022-07-26 | International Business Machines Corporation | Multi-terminal neuromorphic device |
| US11361821B2 (en) * | 2020-11-10 | 2022-06-14 | International Business Machines Corporation | Drift and noise corrected memristive device |
| US11615842B2 (en) | 2020-12-14 | 2023-03-28 | International Business Machines Corporation | Mixed conducting volatile memory element for accelerated writing of nonvolatile memristive device |
| CN113035953B (zh) * | 2021-02-08 | 2023-07-14 | 清华大学 | 一种无机耐高温突触晶体管及其制备方法 |
| JP2022125660A (ja) | 2021-02-17 | 2022-08-29 | キオクシア株式会社 | 記憶装置及び記憶方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3010685B2 (ja) * | 1990-05-28 | 2000-02-21 | ソニー株式会社 | 有機電解質電池 |
| US5908715A (en) * | 1997-05-30 | 1999-06-01 | Hughes Electronics Corporation | Composite carbon materials for lithium ion batteries, and method of producing same |
| KR100860134B1 (ko) * | 2001-08-13 | 2008-09-25 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 메모리 셀 |
| KR100593448B1 (ko) * | 2004-09-10 | 2006-06-28 | 삼성전자주식회사 | 전이금속 산화막을 데이터 저장 물질막으로 채택하는비휘발성 기억 셀들 및 그 제조방법들 |
| KR20090125256A (ko) * | 2007-03-26 | 2009-12-04 | 사임베트 코퍼레이션 | 리튬 막박 전지용 기재 |
| US20080314738A1 (en) * | 2007-06-19 | 2008-12-25 | International Business Machines Corporation | Electrolytic Device Based on a Solution-Processed Electrolyte |
| CN101315969A (zh) | 2008-06-26 | 2008-12-03 | 复旦大学 | 一种具有掺杂控制层的电阻存储器 |
| US20110121359A1 (en) * | 2008-07-31 | 2011-05-26 | Jianhua Yang | Multi-Layer Reconfigurable Switches |
| KR101502898B1 (ko) * | 2008-11-10 | 2015-03-25 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 복합 음극 활물질, 이의 제조 방법 및 이를 구비한 리튬 이차 전지 |
| US8614432B2 (en) | 2009-01-15 | 2013-12-24 | Hewlett-Packard Development Company, L.P. | Crystalline silicon-based memristive device with multiple mobile dopant species |
| KR101105981B1 (ko) * | 2009-04-28 | 2012-01-18 | 한양대학교 산학협력단 | 저항변화 메모리 소자 및 이의 제조방법 |
| CN102484127B (zh) | 2009-09-04 | 2015-07-15 | 惠普开发有限公司 | 基于混合金属价键化合物的记忆电阻 |
| US8120071B2 (en) | 2010-01-11 | 2012-02-21 | Hewlett-Packard Development Company, L.P. | Memfet ram |
| WO2011133158A1 (en) | 2010-04-22 | 2011-10-27 | Hewlett-Packard Development Company, L.P. | Switchable two-terminal devices with diffusion/drift species |
| CN102244193A (zh) | 2010-05-13 | 2011-11-16 | 复旦大学 | 包含钌掺杂的氧化钽基电阻型存储器及其制备方法 |
| EP2641331B1 (en) * | 2010-11-19 | 2020-06-03 | Hewlett-Packard Enterprise Development LP | Method and circuit for switching a memristive device |
| US20140184380A1 (en) * | 2010-11-26 | 2014-07-03 | Varun Aggarwal | Multi-state memory resistor device and methods for making thereof |
| FR2969382B1 (fr) * | 2010-12-17 | 2022-11-18 | Centre Nat Rech Scient | Élément memristif et mémoire électronique basée sur de tels éléments |
| CN102610746A (zh) * | 2011-01-20 | 2012-07-25 | 中国科学院微电子研究所 | 非挥发性电阻转变存储器 |
| WO2013003978A1 (zh) | 2011-07-06 | 2013-01-10 | 复旦大学 | 包含钌掺杂的氧化钽基电阻型存储器及其制备方法 |
| JP6180700B2 (ja) * | 2011-09-09 | 2017-08-16 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| WO2013134757A1 (en) * | 2012-03-09 | 2013-09-12 | Privatran, Inc. | Memristive device and method of manufacture |
| US9224461B2 (en) * | 2012-11-27 | 2015-12-29 | Intel Corporation | Low voltage embedded memory having cationic-based conductive oxide element |
| US20140175371A1 (en) * | 2012-12-21 | 2014-06-26 | Elijah V. Karpov | Vertical cross-point embedded memory architecture for metal-conductive oxide-metal (mcom) memory elements |
| GB2516841A (en) | 2013-07-31 | 2015-02-11 | Ibm | Resistive memory element based on oxygen-doped amorphous carbon |
| CN104752608A (zh) | 2013-12-26 | 2015-07-01 | 北京有色金属研究总院 | 一种忆阻器及其制备方法 |
| DE102014113030A1 (de) * | 2014-09-10 | 2016-03-10 | Infineon Technologies Ag | Speicherschaltungen und ein Verfahren zum Bilden einer Speicherschaltung |
| TWI560918B (en) * | 2014-10-15 | 2016-12-01 | Univ Nat Sun Yat Sen | Resistance random access memory |
| CN104916777B (zh) | 2015-05-08 | 2017-11-03 | 浙江大学 | 一种锂离子掺杂石墨烯忆阻器及其制备方法 |
-
2017
- 2017-01-13 US US15/405,555 patent/US10164179B2/en active Active
-
2018
- 2018-01-03 WO PCT/IB2018/050033 patent/WO2018130914A1/en not_active Ceased
- 2018-01-03 CN CN201880006821.2A patent/CN110168761A/zh active Pending
- 2018-01-03 JP JP2019534947A patent/JP6921961B2/ja active Active
- 2018-01-03 GB GB1910618.6A patent/GB2573693A/en not_active Withdrawn
- 2018-01-03 DE DE112018000134.2T patent/DE112018000134T5/de active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2020509574A5 (enExample) | ||
| JP2013051033A5 (enExample) | ||
| JP2015511026A5 (enExample) | ||
| JP2013214732A5 (enExample) | ||
| JP2015097199A5 (enExample) | ||
| JP2015084416A5 (enExample) | ||
| JP2014013917A5 (enExample) | ||
| JP2013051169A5 (ja) | 蓄電装置 | |
| WO2013003325A3 (en) | Electrode material for a spark plug | |
| JP2013229309A5 (ja) | 蓄電素子および蓄電素子の作製方法 | |
| JP2011233873A5 (ja) | 半導体装置 | |
| JP2015111742A5 (ja) | 半導体装置の作製方法、及び半導体装置 | |
| JP2012505551A5 (enExample) | ||
| JP2016105474A5 (ja) | トランジスタ、メモリ、及び電子機器 | |
| JP2014116588A5 (enExample) | ||
| JP2018092934A5 (ja) | 電極および蓄電池 | |
| Girard et al. | Enhancing faradaic charge storage contribution in hybrid pseudocapacitors | |
| JP2015015457A5 (enExample) | ||
| JP2012256408A5 (ja) | 半導体記憶装置 | |
| JP2012084853A5 (ja) | 半導体装置の作製方法、及び、半導体装置 | |
| JP2015092474A5 (enExample) | ||
| JP2012033474A5 (ja) | 蓄電装置の作製方法 | |
| JP2016111107A5 (enExample) | ||
| JP2012033900A5 (ja) | 半導体装置 | |
| JP2016502241A5 (enExample) |