CN110168761A - 基于忆阻器件过渡金属氧化物的碱性掺杂的忆阻器件 - Google Patents

基于忆阻器件过渡金属氧化物的碱性掺杂的忆阻器件 Download PDF

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Publication number
CN110168761A
CN110168761A CN201880006821.2A CN201880006821A CN110168761A CN 110168761 A CN110168761 A CN 110168761A CN 201880006821 A CN201880006821 A CN 201880006821A CN 110168761 A CN110168761 A CN 110168761A
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layer
oxide
metal
conductive material
conductive
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T·S·格申
K·W·布鲁
S·辛格
D·纽恩斯
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Adeia Semiconductor Solutions LLC
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/0499—Feedforward networks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • G06N3/084—Backpropagation, e.g. using gradient descent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Manufacturing & Machinery (AREA)
  • Neurology (AREA)
  • Semiconductor Memories (AREA)
  • Thyristors (AREA)
CN201880006821.2A 2017-01-13 2018-01-03 基于忆阻器件过渡金属氧化物的碱性掺杂的忆阻器件 Pending CN110168761A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/405,555 US10164179B2 (en) 2017-01-13 2017-01-13 Memristive device based on alkali-doping of transitional metal oxides
US15/405,555 2017-01-13
PCT/IB2018/050033 WO2018130914A1 (en) 2017-01-13 2018-01-03 Memristive device based on alkali-doping of transitional metal oxides

Publications (1)

Publication Number Publication Date
CN110168761A true CN110168761A (zh) 2019-08-23

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US (1) US10164179B2 (enExample)
JP (1) JP6921961B2 (enExample)
CN (1) CN110168761A (enExample)
DE (1) DE112018000134T5 (enExample)
GB (1) GB2573693A (enExample)
WO (1) WO2018130914A1 (enExample)

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WO2022101741A1 (en) * 2020-11-10 2022-05-19 International Business Machines Corporation Drift and noise corrected memristive device
US11397544B2 (en) 2020-11-10 2022-07-26 International Business Machines Corporation Multi-terminal neuromorphic device

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US10127494B1 (en) * 2017-08-02 2018-11-13 Google Llc Neural network crossbar stack
US11455521B2 (en) 2019-03-01 2022-09-27 International Business Machines Corporation Neuromorphic device driven by copper ion intercalation
US11079958B2 (en) 2019-04-12 2021-08-03 Intel Corporation Apparatus, system and method for offloading data transfer operations between source and destination storage devices to a hardware accelerator
US11250315B2 (en) 2019-10-29 2022-02-15 International Business Machines Corporation Electrochemical device of variable electrical conductance
US11552246B2 (en) 2020-01-21 2023-01-10 Massachusetts Institute Of Technology Memristors and related systems and methods
US11742901B2 (en) * 2020-07-27 2023-08-29 Electronics And Telecommunications Research Institute Deep learning based beamforming method and apparatus
US11615842B2 (en) 2020-12-14 2023-03-28 International Business Machines Corporation Mixed conducting volatile memory element for accelerated writing of nonvolatile memristive device
CN113035953B (zh) * 2021-02-08 2023-07-14 清华大学 一种无机耐高温突触晶体管及其制备方法
JP2022125660A (ja) 2021-02-17 2022-08-29 キオクシア株式会社 記憶装置及び記憶方法

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WO2022101741A1 (en) * 2020-11-10 2022-05-19 International Business Machines Corporation Drift and noise corrected memristive device
US11361821B2 (en) 2020-11-10 2022-06-14 International Business Machines Corporation Drift and noise corrected memristive device
US11397544B2 (en) 2020-11-10 2022-07-26 International Business Machines Corporation Multi-terminal neuromorphic device
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JP6921961B2 (ja) 2021-08-18
US10164179B2 (en) 2018-12-25
JP2020509574A (ja) 2020-03-26
GB201910618D0 (en) 2019-09-11
US20180205011A1 (en) 2018-07-19
DE112018000134T5 (de) 2019-07-04
GB2573693A (en) 2019-11-13
WO2018130914A1 (en) 2018-07-19

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