JP2016111107A5 - - Google Patents
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- Publication number
- JP2016111107A5 JP2016111107A5 JP2014245398A JP2014245398A JP2016111107A5 JP 2016111107 A5 JP2016111107 A5 JP 2016111107A5 JP 2014245398 A JP2014245398 A JP 2014245398A JP 2014245398 A JP2014245398 A JP 2014245398A JP 2016111107 A5 JP2016111107 A5 JP 2016111107A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- film transistor
- oxide semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims 11
- 239000002184 metal Substances 0.000 claims 11
- 229910044991 metal oxide Inorganic materials 0.000 claims 11
- 150000004706 metal oxides Chemical class 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000010409 thin film Substances 0.000 claims 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 238000010494 dissociation reaction Methods 0.000 claims 2
- 230000005593 dissociations Effects 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000005546 reactive sputtering Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 230000009257 reactivity Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014245398A JP6519073B2 (ja) | 2014-12-03 | 2014-12-03 | 薄膜トランジスタ及びその製造方法、並びに、表示装置 |
| US14/956,894 US10050150B2 (en) | 2014-12-03 | 2015-12-02 | Thin-film transistor, method of fabricating thin-film transistor, and display device |
| US16/028,619 US10644165B2 (en) | 2014-12-03 | 2018-07-06 | Thin-film transistor, method of fabricating thin-film transistor, and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014245398A JP6519073B2 (ja) | 2014-12-03 | 2014-12-03 | 薄膜トランジスタ及びその製造方法、並びに、表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016111107A JP2016111107A (ja) | 2016-06-20 |
| JP2016111107A5 true JP2016111107A5 (enExample) | 2017-09-28 |
| JP6519073B2 JP6519073B2 (ja) | 2019-05-29 |
Family
ID=56095077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014245398A Active JP6519073B2 (ja) | 2014-12-03 | 2014-12-03 | 薄膜トランジスタ及びその製造方法、並びに、表示装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US10050150B2 (enExample) |
| JP (1) | JP6519073B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7007080B2 (ja) * | 2016-07-19 | 2022-02-10 | 株式会社ジャパンディスプレイ | Ｔｆｔ回路基板 |
| EP3513427A4 (en) * | 2016-09-14 | 2020-05-06 | Applied Materials, Inc. | METHOD FOR PRODUCING CONTACTS BETWEEN METAL AND SEMICONDUCTOR |
| KR102832749B1 (ko) * | 2016-09-23 | 2025-07-10 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
| KR102612736B1 (ko) * | 2016-11-30 | 2023-12-12 | 엘지디스플레이 주식회사 | 표시 장치용 기판과, 그를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
| JP7126823B2 (ja) * | 2016-12-23 | 2022-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI692002B (zh) * | 2017-02-28 | 2020-04-21 | 財團法人國家實驗研究院 | 可撓式基板結構、可撓式電晶體及其製造方法 |
| CN107170811B (zh) | 2017-05-12 | 2019-12-31 | 京东方科技集团股份有限公司 | 一种金属氧化物薄膜晶体管结构背板及其制备方法 |
| JPWO2018215878A1 (ja) * | 2017-05-26 | 2020-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP6928333B2 (ja) * | 2017-11-20 | 2021-09-01 | 株式会社アルバック | 酸化物半導体薄膜、薄膜トランジスタ、薄膜トランジスタの製造方法及びスパッタリングターゲット |
| US10741671B2 (en) | 2017-11-28 | 2020-08-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing semiconductor device |
| US20190206691A1 (en) * | 2018-01-04 | 2019-07-04 | Applied Materials, Inc. | High-k gate insulator for a thin-film transistor |
| DE112018008193T5 (de) * | 2018-12-05 | 2021-10-14 | Mitsubishi Electric Corporation | Halbleitereinheit und verfahren zur herstellung einer halbleitereinheit |
| CN110729237A (zh) * | 2019-10-23 | 2020-01-24 | 成都中电熊猫显示科技有限公司 | 阵列基板的制造方法、阵列基板及显示面板 |
| US20220181460A1 (en) * | 2020-12-07 | 2022-06-09 | Intel Corporation | Transistor source/drain contacts |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4627835B2 (ja) * | 2000-03-23 | 2011-02-09 | キヤノンアネルバ株式会社 | スパッタリング装置及び薄膜形成方法 |
| KR101496148B1 (ko) | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| US8247276B2 (en) * | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
| KR101671210B1 (ko) | 2009-03-06 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP5708910B2 (ja) | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| JP2011222767A (ja) * | 2010-04-09 | 2011-11-04 | Sony Corp | 薄膜トランジスタならびに表示装置および電子機器 |
| KR20110139394A (ko) * | 2010-06-23 | 2011-12-29 | 주성엔지니어링(주) | 박막 트랜지스터 및 그 제조 방법 |
| JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| JP5685989B2 (ja) * | 2011-02-28 | 2015-03-18 | ソニー株式会社 | 表示装置および電子機器 |
| JP6005401B2 (ja) | 2011-06-10 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9653614B2 (en) * | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6223198B2 (ja) * | 2013-01-24 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN103219389B (zh) * | 2013-03-21 | 2016-03-16 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
| US9431468B2 (en) * | 2013-04-19 | 2016-08-30 | Joled Inc. | Thin-film semiconductor device, organic EL display device, and manufacturing methods thereof |
| US9806198B2 (en) * | 2013-06-05 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2016111105A (ja) | 2014-12-03 | 2016-06-20 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ及びその製造方法、並びに、表示装置 |
-
2014
- 2014-12-03 JP JP2014245398A patent/JP6519073B2/ja active Active
-
2015
- 2015-12-02 US US14/956,894 patent/US10050150B2/en active Active
-
2018
- 2018-07-06 US US16/028,619 patent/US10644165B2/en active Active
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