|
US9324398B2
(en)
|
2013-02-04 |
2016-04-26 |
Micron Technology, Inc. |
Apparatuses and methods for targeted refreshing of memory
|
|
US9047978B2
(en)
|
2013-08-26 |
2015-06-02 |
Micron Technology, Inc. |
Apparatuses and methods for selective row refreshes
|
|
JP2015219938A
(ja)
|
2014-05-21 |
2015-12-07 |
マイクロン テクノロジー， インク． |
半導体装置
|
|
JP2017182854A
(ja)
|
2016-03-31 |
2017-10-05 |
マイクロン テクノロジー， インク． |
半導体装置
|
|
FR3066842B1
(fr)
*
|
2017-05-24 |
2019-11-08 |
Upmem |
Logique de correction de row hammer pour dram avec processeur integre
|
|
US10580475B2
(en)
|
2018-01-22 |
2020-03-03 |
Micron Technology, Inc. |
Apparatuses and methods for calculating row hammer refresh addresses in a semiconductor device
|
|
US11152050B2
(en)
|
2018-06-19 |
2021-10-19 |
Micron Technology, Inc. |
Apparatuses and methods for multiple row hammer refresh address sequences
|
|
US10726903B2
(en)
|
2018-09-21 |
2020-07-28 |
Nanya Technology Corporation |
Row-determining circuit, DRAM, and method for refreshing a memory array
|
|
US10685696B2
(en)
|
2018-10-31 |
2020-06-16 |
Micron Technology, Inc. |
Apparatuses and methods for access based refresh timing
|
|
CN113168861B
(zh)
|
2018-12-03 |
2024-05-14 |
美光科技公司 |
执行行锤刷新操作的半导体装置
|
|
US10957377B2
(en)
|
2018-12-26 |
2021-03-23 |
Micron Technology, Inc. |
Apparatuses and methods for distributed targeted refresh operations
|
|
US10770127B2
(en)
|
2019-02-06 |
2020-09-08 |
Micron Technology, Inc. |
Apparatuses and methods for managing row access counts
|
|
US11043254B2
(en)
|
2019-03-19 |
2021-06-22 |
Micron Technology, Inc. |
Semiconductor device having cam that stores address signals
|
|
US10950288B2
(en)
*
|
2019-03-29 |
2021-03-16 |
Intel Corporation |
Refresh command control for host assist of row hammer mitigation
|
|
US11264096B2
(en)
|
2019-05-14 |
2022-03-01 |
Micron Technology, Inc. |
Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits
|
|
US11158364B2
(en)
|
2019-05-31 |
2021-10-26 |
Micron Technology, Inc. |
Apparatuses and methods for tracking victim rows
|
|
US11158373B2
(en)
|
2019-06-11 |
2021-10-26 |
Micron Technology, Inc. |
Apparatuses, systems, and methods for determining extremum numerical values
|
|
US11139015B2
(en)
|
2019-07-01 |
2021-10-05 |
Micron Technology, Inc. |
Apparatuses and methods for monitoring word line accesses
|
|
US10832792B1
(en)
|
2019-07-01 |
2020-11-10 |
Micron Technology, Inc. |
Apparatuses and methods for adjusting victim data
|
|
US11386946B2
(en)
|
2019-07-16 |
2022-07-12 |
Micron Technology, Inc. |
Apparatuses and methods for tracking row accesses
|
|
US10943636B1
(en)
|
2019-08-20 |
2021-03-09 |
Micron Technology, Inc. |
Apparatuses and methods for analog row access tracking
|
|
US10964378B2
(en)
|
2019-08-22 |
2021-03-30 |
Micron Technology, Inc. |
Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation
|
|
US11200942B2
(en)
|
2019-08-23 |
2021-12-14 |
Micron Technology, Inc. |
Apparatuses and methods for lossy row access counting
|
|
US10916292B1
(en)
*
|
2019-08-28 |
2021-02-09 |
Micron Technology, Inc. |
Performing a refresh operation based on system characteristics
|
|
KR102900796B1
(ko)
*
|
2020-03-11 |
2025-12-17 |
에스케이하이닉스 주식회사 |
메모리, 메모리 시스템 및 메모리의 동작 방법
|
|
US11222685B2
(en)
*
|
2020-05-15 |
2022-01-11 |
Advanced Micro Devices, Inc. |
Refresh management for DRAM
|
|
US11561862B2
(en)
*
|
2020-05-29 |
2023-01-24 |
Advanced Micro Devices, Inc. |
Refresh management for DRAM
|
|
US11361811B2
(en)
*
|
2020-06-23 |
2022-06-14 |
Upmem |
Method and circuit for protecting a DRAM memory device from the row hammer effect
|
|
US11120860B1
(en)
*
|
2020-08-06 |
2021-09-14 |
Micron Technology, Inc. |
Staggering refresh address counters of a number of memory devices, and related methods, devices, and systems
|
|
US11222682B1
(en)
|
2020-08-31 |
2022-01-11 |
Micron Technology, Inc. |
Apparatuses and methods for providing refresh addresses
|
|
US11809743B2
(en)
*
|
2020-09-21 |
2023-11-07 |
Advanced Micro Devices, Inc. |
Refresh management list for DRAM
|
|
CN114388049B
(zh)
*
|
2020-10-16 |
2023-09-12 |
长鑫存储技术有限公司 |
存储器测试方法
|
|
US12308069B2
(en)
*
|
2020-10-26 |
2025-05-20 |
Qualcomm Incorporated |
DRAM with quick random row refresh for rowhammer mitigation
|
|
US11947840B2
(en)
*
|
2020-10-30 |
2024-04-02 |
Micron Technology, Inc. |
Inter-die refresh control
|
|
US11410715B2
(en)
|
2020-11-06 |
2022-08-09 |
Micron Technology, Inc. |
Apparatus with refresh management mechanism
|
|
KR20220062843A
(ko)
*
|
2020-11-09 |
2022-05-17 |
에스케이하이닉스 주식회사 |
저장 장치 및 그 동작 방법
|
|
US11462291B2
(en)
|
2020-11-23 |
2022-10-04 |
Micron Technology, Inc. |
Apparatuses and methods for tracking word line accesses
|
|
US11474746B2
(en)
*
|
2020-12-10 |
2022-10-18 |
Advanced Micro Devices, Inc. |
Refresh management for DRAM
|
|
US11790975B2
(en)
|
2020-12-10 |
2023-10-17 |
SK Hynix Inc. |
Memory controller and memory system
|
|
KR102385443B1
(ko)
|
2020-12-21 |
2022-04-12 |
서울대학교 산학협력단 |
카운터 기반의 로우 해머 방지를 위한 선택적 로우 해머 리프레쉬 장치 및 그 방법
|
|
US11482275B2
(en)
|
2021-01-20 |
2022-10-25 |
Micron Technology, Inc. |
Apparatuses and methods for dynamically allocated aggressor detection
|
|
KR102906228B1
(ko)
*
|
2021-02-25 |
2025-12-30 |
삼성전자주식회사 |
메모리 장치 및 그 동작방법
|
|
US11972788B2
(en)
*
|
2021-03-11 |
2024-04-30 |
Micron Technology, Inc. |
Apparatuses, systems, and methods for controller directed targeted refresh operations based on sampling command
|
|
US11854595B2
(en)
|
2021-03-15 |
2023-12-26 |
Changxin Memory Technologies, Inc. |
Refresh circuit and memory
|
|
CN112786087B
(zh)
*
|
2021-03-15 |
2022-04-26 |
长鑫存储技术有限公司 |
刷新电路及存储器
|
|
US11869567B2
(en)
|
2021-03-15 |
2024-01-09 |
Changxin Memory Technologies, Inc. |
Refresh control circuit and memory
|
|
US11600314B2
(en)
|
2021-03-15 |
2023-03-07 |
Micron Technology, Inc. |
Apparatuses and methods for sketch circuits for refresh binning
|
|
EP4191592A4
(en)
|
2021-03-15 |
2024-07-10 |
Changxin Memory Technologies, Inc. |
Refresh control circuit and memory
|
|
FR3121262A1
(fr)
*
|
2021-03-29 |
2022-09-30 |
Upmem |
Dispositif mémoire et procédé de protection d’un dispositif mémoire de l’effet de martelage d’un rang
|
|
JP7574720B2
(ja)
*
|
2021-04-05 |
2024-10-29 |
富士通株式会社 |
メモリ管理装置、メモリ管理方法及びメモリ管理プログラム
|
|
US12347507B2
(en)
|
2021-05-03 |
2025-07-01 |
Intel Corporation |
Method and apparatus for memory chip row hammer threat backpressure signal and host side response
|
|
US12164803B2
(en)
*
|
2021-05-21 |
2024-12-10 |
Micron Technology, Inc. |
Memory with memory-initiated command insertion, and associated systems, devices, and methods
|
|
US12027199B2
(en)
|
2021-05-26 |
2024-07-02 |
Samsung Electronics Co., Ltd. |
Memory device and method of controlling row hammer
|
|
US11955159B2
(en)
*
|
2021-07-20 |
2024-04-09 |
Samsung Electronics Co., Ltd. |
Semiconductor memory device and memory system including the same
|
|
US11664063B2
(en)
|
2021-08-12 |
2023-05-30 |
Micron Technology, Inc. |
Apparatuses and methods for countering memory attacks
|
|
US12346600B2
(en)
|
2021-08-26 |
2025-07-01 |
SK Hynix Inc. |
Memory module, memory system including memory module, and method of operating the same
|
|
KR102951319B1
(ko)
|
2021-08-30 |
2026-04-10 |
삼성전자주식회사 |
메모리 컨트롤러 및 메모리 시스템
|
|
US12175087B2
(en)
|
2021-09-28 |
2024-12-24 |
Advanced Micro Devices, Inc. |
Method and apparatus for protecting memory devices via a synergic approach
|
|
KR102937510B1
(ko)
|
2021-10-12 |
2026-03-11 |
삼성전자주식회사 |
해머 리프레시 로우 어드레스 검출기, 이를 포함하는 반도체 메모리 장치 및 메모리 모듈
|
|
KR102924776B1
(ko)
|
2021-10-12 |
2026-02-09 |
삼성전자주식회사 |
반도체 메모리 장치 및 반도체 메모리 장치의 동작 방법
|
|
CN116153357B
(zh)
*
|
2021-11-19 |
2025-05-30 |
长鑫存储技术有限公司 |
一种锤击刷新方法、锤击刷新电路及半导体存储器
|
|
EP4210059B1
(en)
*
|
2021-11-19 |
2025-07-16 |
Changxin Memory Technologies, Inc. |
Row hammer refresh method, row hammer refresh circuit, and semiconductor memory
|
|
US11688451B2
(en)
|
2021-11-29 |
2023-06-27 |
Micron Technology, Inc. |
Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking
|
|
KR102890786B1
(ko)
|
2021-11-30 |
2025-11-26 |
삼성전자주식회사 |
반도체 메모리 장치 및 이를 포함하는 메모리 시스템
|
|
US12236993B2
(en)
*
|
2021-12-02 |
2025-02-25 |
Samsung Electronics Co., Ltd. |
Memory device detecting weakness of operation pattern and method of operating the same
|
|
KR102946045B1
(ko)
*
|
2021-12-10 |
2026-03-30 |
삼성전자주식회사 |
메모리 장치
|
|
CN114242132B
(zh)
*
|
2021-12-15 |
2025-09-16 |
海光信息技术股份有限公司 |
一种内存刷新计数的方法、装置以及内存控制器
|
|
US12105971B2
(en)
|
2021-12-22 |
2024-10-01 |
Micron Technology, Inc. |
Dual-level refresh management
|
|
US12443367B2
(en)
*
|
2021-12-23 |
2025-10-14 |
Intel Corporation |
Perfect row hammer tracking with multiple count increments
|
|
US12597459B2
(en)
*
|
2021-12-29 |
2026-04-07 |
Micron Technology, Inc. |
Apparatuses and methods for row hammer counter mat
|
|
US12165687B2
(en)
|
2021-12-29 |
2024-12-10 |
Micron Technology, Inc. |
Apparatuses and methods for row hammer counter mat
|
|
KR20230105091A
(ko)
|
2022-01-03 |
2023-07-11 |
에스케이하이닉스 주식회사 |
반도체 메모리 장치 및 이를 포함하는 메모리 시스템
|
|
US12236105B2
(en)
|
2022-01-11 |
2025-02-25 |
Samsung Electronics Co., Ltd. |
Semiconductor memory devices having enhanced refresh operations that inhibit row hammer hacking
|
|
US12248567B2
(en)
*
|
2022-01-21 |
2025-03-11 |
Micron Technology, Inc. |
Row hammer interrupts to the operating system
|
|
US12131768B2
(en)
*
|
2022-01-24 |
2024-10-29 |
Micron Technology, Inc. |
Dynamic random access memory (DRAM) multi-wordline direct refresh management including aliasing row counter policy for row hammer mitigation
|
|
US12265630B2
(en)
*
|
2022-01-27 |
2025-04-01 |
Micron Technology, Inc. |
Row access strobe (RAS) clobber and row hammer failures using a deterministic protocol
|
|
CN116778992A
(zh)
|
2022-03-15 |
2023-09-19 |
美光科技公司 |
行锤遥测
|
|
US12112787B2
(en)
|
2022-04-28 |
2024-10-08 |
Micron Technology, Inc. |
Apparatuses and methods for access based targeted refresh operations
|
|
US12125514B2
(en)
*
|
2022-04-28 |
2024-10-22 |
Micron Technology, Inc. |
Apparatuses and methods for access based refresh operations
|
|
US12086415B2
(en)
*
|
2022-05-05 |
2024-09-10 |
Micron Technology, Inc. |
Frequency regulation for memory management commands
|
|
US12562207B2
(en)
|
2022-05-06 |
2026-02-24 |
Intel Corporation |
Method of polling row hammer (RH) indicator inside memory
|
|
KR20230163172A
(ko)
*
|
2022-05-23 |
2023-11-30 |
에스케이하이닉스 주식회사 |
로우해머링추적동작을 수행하기 위한 반도체시스템
|
|
KR20230163776A
(ko)
*
|
2022-05-24 |
2023-12-01 |
에스케이하이닉스 주식회사 |
메모리 및 메모리의 동작 방법
|
|
US12586626B2
(en)
*
|
2022-06-01 |
2026-03-24 |
Intel Corporation |
Randomization of directed refresh management (DRFM) pseudo target row refresh (PTRR) commands
|
|
CN117174134A
(zh)
|
2022-06-02 |
2023-12-05 |
美光科技公司 |
使用分层检测器的行锤缓解
|
|
US12067270B2
(en)
|
2022-06-02 |
2024-08-20 |
Micron Technology, Inc. |
Memory device security and row hammer mitigation
|
|
US12118221B2
(en)
*
|
2022-06-22 |
2024-10-15 |
Samsung Electronics Co., Ltd. |
Semiconductor memory devices and memory systems including the same
|
|
KR102803084B1
(ko)
*
|
2022-06-23 |
2025-05-07 |
창신 메모리 테크놀로지즈 아이엔씨 |
리프레시 제어 회로 및 그 방법, 메모리
|
|
TWI899551B
(zh)
*
|
2022-06-27 |
2025-10-01 |
南韓商三星電子股份有限公司 |
記憶體裝置及其再新方法
|
|
US11935623B2
(en)
*
|
2022-06-28 |
2024-03-19 |
Montage Technology (Kunshan) Co. |
Apparatus for controlling access to a memory device and memory system comprising the same
|
|
KR20240013495A
(ko)
*
|
2022-07-22 |
2024-01-30 |
삼성전자주식회사 |
메모리 장치 및 그 리프레시 방법
|
|
US12175099B2
(en)
*
|
2022-07-25 |
2024-12-24 |
Samsung Electronics Co., Ltd. |
Semiconductor memory device and memory system including the same
|
|
US12315553B2
(en)
|
2022-07-26 |
2025-05-27 |
Micron Technology, Inc. |
Selectable row hammer mitigation
|
|
CN117636939A
(zh)
*
|
2022-08-15 |
2024-03-01 |
长鑫存储技术有限公司 |
获取行锤刷新地址的方法和设备
|
|
US12211543B2
(en)
*
|
2022-09-08 |
2025-01-28 |
Qualcomm Incorporated |
Dynamic rowhammer management
|
|
US11948656B1
(en)
*
|
2022-09-21 |
2024-04-02 |
Micron Technology, Inc. |
Counter management for memory systems
|
|
US11922031B1
(en)
*
|
2022-09-23 |
2024-03-05 |
Micron Technology, Inc. |
Apparatus with directed refresh management mechanism
|
|
US12322434B2
(en)
*
|
2022-09-30 |
2025-06-03 |
Advanced Micro Devices, Inc. |
Directed refresh management for DRAM
|
|
KR20240053156A
(ko)
*
|
2022-10-17 |
2024-04-24 |
삼성전자주식회사 |
메모리 장치 및 그 동작 방법
|
|
CN115357952B
(zh)
*
|
2022-10-18 |
2023-02-03 |
合肥奎芯集成电路设计有限公司 |
针对动态存储器的行锤攻击防御方法和装置
|
|
KR20240067516A
(ko)
|
2022-11-09 |
2024-05-17 |
삼성전자주식회사 |
메모리 장치 및 그의 동작 방법
|
|
KR20240076197A
(ko)
|
2022-11-23 |
2024-05-30 |
삼성전자주식회사 |
Cxl 디바이스 및 cxl 디바이스의 동작 방법
|
|
US12592271B2
(en)
|
2022-12-22 |
2026-03-31 |
Micron Technology, Inc. |
Apparatuses and methods for increased reliability row hammer counts
|
|
KR102843236B1
(ko)
*
|
2022-12-28 |
2025-08-05 |
한양대학교 산학협력단 |
반도체 메모리 장치 및 이의 로우 해머 방지 방법
|
|
US12554850B2
(en)
|
2023-02-15 |
2026-02-17 |
Nxp Usa, Inc. |
Systems and methods for adaptively detecting and mitigating RowHammer attacks against computer memories
|
|
FR3147016B1
(fr)
*
|
2023-03-21 |
2025-02-07 |
Commissariat Energie Atomique |
Procédé de gestion d’une mémoire cache
|
|
KR20240143291A
(ko)
|
2023-03-24 |
2024-10-02 |
에스케이하이닉스 주식회사 |
카운팅 동작을 수행하는 메모리, 메모리 시스템 및 메모리의 동작 방법
|
|
US12554843B1
(en)
|
2023-03-30 |
2026-02-17 |
Amazon Technologies, Inc. |
Collaborative hardware-software technique for increasing resilience to bit-flips
|
|
KR20240178809A
(ko)
*
|
2023-06-23 |
2024-12-31 |
에스케이하이닉스 주식회사 |
메모리 컨트롤러 및 이를 포함하는 메모리 시스템
|
|
US12488108B2
(en)
*
|
2023-07-12 |
2025-12-02 |
Nanya Technology Corporation |
Memory device and control method for controlling memory device
|
|
US12189541B1
(en)
*
|
2023-08-28 |
2025-01-07 |
Nanya Technology Corporation |
Memory device and control method for controlling memory device
|
|
WO2025198795A1
(en)
*
|
2024-03-20 |
2025-09-25 |
Micron Technology, Inc. |
Apparatuses systems and methods for memory with access¬ based refresh control
|
|
KR102824636B1
(ko)
*
|
2024-08-16 |
2025-06-24 |
주식회사 쿼드마이너 |
공격 위험도 결정 장치 및 그 방법
|
|
US20260064290A1
(en)
*
|
2024-08-29 |
2026-03-05 |
Micron Technology, Inc. |
Reporting Multiple Events associated with Mitigating Usage-Based Disturbance
|