JP2020052361A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2020052361A JP2020052361A JP2018184526A JP2018184526A JP2020052361A JP 2020052361 A JP2020052361 A JP 2020052361A JP 2018184526 A JP2018184526 A JP 2018184526A JP 2018184526 A JP2018184526 A JP 2018184526A JP 2020052361 A JP2020052361 A JP 2020052361A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 107
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- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010931 gold Substances 0.000 claims description 15
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
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- 239000002243 precursor Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
最初に本願発明の実施形態の内容を列記して説明する。
(2)前記第1配線層の端部は前記第2配線層の端部よりも外側に位置し、前記第2配線層を囲んでもよい。これにより応力をより効果的に緩和することができ、第1無機絶縁膜のクラックを抑制することができる。
(3)前記第1配線層の長さは前記第2配線層の長さよりも4μm以上、14μm以下大きくてもよい。これにより応力をより効果的に緩和することができ、第1無機絶縁膜のクラックを抑制することができる。
(4)前記第1配線層および前記第2配線層は金を含んでもよい。これにより応力をより効果的に緩和することができ、第1無機絶縁膜のクラックを抑制することができる。
(5)前記第1配線層の厚さは0.8μm以上、2.0μm以下であり、前記第2配線層の厚さは2.5μm以上、5.0μm以下でもよい。これにより応力をより効果的に緩和することができ、第1無機絶縁膜のクラックを抑制することができる。
(6)前記第1無機絶縁膜は窒化シリコン、酸化シリコンおよび酸窒化シリコンのいずれかを含んでもよい。これらは樹脂との密着性が高いため、第2配線層の密着性が向上する。
(7)前記半導体層と前記第1樹脂層との間に設けられた第2無機絶縁膜と、前記第1樹脂層と前記第2樹脂層との間に設けられた第3無機絶縁膜と、前記第2樹脂層と前記第1無機絶縁膜との間に設けられた前記第4無機絶縁膜とを具備してもよい。無機絶縁膜は樹脂との密着性が高いため、半導体層から第2配線層までの各層の間で高い密着性が得られる。また、応力を緩和することで、第1無機絶縁膜のクラックを抑制することができる。
(8)前記第2樹脂層および前記第4無機絶縁膜は前記第1配線層と重なる位置に開口部を有し、前記第2配線層は前記開口部に設けられてもよい。これにより第2配線層と第1配線層とが接触し、電気的に接続される。第1配線層および第2配線層が第1樹脂層および第2樹脂層により囲まれ、剥がれにくくなる。
(9)前記半導体層は前記基板の上に積層された複数の化合物半導体層であり、前記半導体層は、前記複数の化合物半導体層で形成されたメサを有し、前記メサの側面は前記第1樹脂層で埋め込まれ、前記メサの面積は前記第1配線層の面積より大きく、前記第1配線層は前記メサの上に形成されてもよい。基板の上にピラーが生じる恐れがある。第1配線層をメサの上に設けることで、第1配線層および第2配線層をピラーから遠ざけることができる。
(10)基板の上に半導体層を成長する工程と、前記半導体層にドライエッチングを行うことでメサを形成する工程と、前記半導体層の上に、前記メサを埋め込む第1樹脂層を形成する工程と、前記メサの上に第1配線層を形成する工程と、前記第1樹脂層の上に第2樹脂層を形成する工程と、前記第2樹脂層の上に、前記第1配線層と電気的に接続される第2配線層を形成する工程と、前記第2樹脂層および前記第2配線層を覆う第1無機絶縁膜を形成する工程と、を有し、前記第1配線層の面積は前記第2配線層の面積よりも大きい半導体装置の製造方法半導体装置の製造方法である。第1配線層の面積が第2配線層の面積よりも大きいため、第1無機絶縁膜に加わる応力を緩和することができる。この結果、第1無機絶縁膜のクラックを抑制することができる。
本発明の実施形態に係る半導体装置およびその製造方法の具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。
図1は実施例1に係る光変調器100の光導波路部分の平面図である。図1のように、光変調器100(半導体装置)は、基板10上に、入力導波路31a、出力導波路31b、光カプラ32a,32b、及び複数のマッハツェンダ変調器30が設けられている。入力導波路31a、出力導波路31b、及び光カプラ32a,32bは、メサ状の光導波路からなる。光カプラ32a,32bは、MMI(Multimode Interferometer)型の光カプラである。複数のマッハツェンダ変調器30は、メサ状の光導波路の経路を組み合わせた構成をしている。入力導波路31aから入力された光は、光カプラ32aで分岐され、マッハツェンダ変調器30を経由した後、光カプラ32bで合波されて、出力導波路31bに出力される。光変調器100の大きさは、例えば10mm×4mmである。
図6(a)から図9(d)は光変調器100の製造方法を例示する断面図である。図6(a)から図8(c)は図3(a)に対応する断面を図示し、図9(a)から図9(d)は図4(a)に対応する断面を図示する。
11 メサ
12、13 下部クラッド層
14 コア層
16 上部クラッド層
18 コンタクト層
20、21 樹脂層
21a、25a 開口部
22〜25 無機絶縁膜
26、27 配線層
26a 下地層
26b メッキ層
31a 入力導波路
31b 出力導波路
32a〜33b 光カプラ
34a、34b アーム導波路
36 グランド電極
38、39 ボンディングパッド
40 DC電極パッド
41 接続配線
100 光変調器
Claims (10)
- 基板の上に設けられた半導体層と、
前記半導体層の上に設けられた第1樹脂層と、
前記第1樹脂層の上に設けられた第2樹脂層と、
前記半導体層の上に形成され、前記第2樹脂層に埋め込まれた第1配線層と、
前記第2樹脂層および前記第1配線層の上に形成され、前記第1配線層と電気的に接続された第2配線層と、
前記第2樹脂層および前記第2配線層を覆う第1無機絶縁膜と、を具備し、
前記第1配線層の面積は前記第2配線層の面積よりも大きい半導体装置。 - 前記第1配線層の端部は前記第2配線層の端部よりも外側に位置し、前記第2配線層を囲む請求項1に記載の半導体装置。
- 前記第1配線層の長さは前記第2配線層の長さよりも4μm以上、14μm以下大きい請求項1または2に記載の半導体装置。
- 前記第1配線層および前記第2配線層は金を含む請求項1から3のいずれか一項に記載の半導体装置。
- 前記第1配線層の厚さは0.8μm以上、2.0μm以下であり、
前記第2配線層の厚さは2.5μm以上、5.0μm以下である請求項1から4のいずれか一項に記載の半導体装置。 - 前記第1無機絶縁膜は窒化シリコン、酸化シリコンおよび酸窒化シリコンのいずれかを含む請求項1から5のいずれか一項に記載の半導体装置。
- 前記半導体層と前記第1樹脂層との間に設けられた第2無機絶縁膜と、
前記第1樹脂層と前記第2樹脂層との間に設けられた第3無機絶縁膜と、
前記第2樹脂層と前記第1無機絶縁膜との間に設けられた第4無機絶縁膜とを具備し、
前記第2配線層は前記第4無機絶縁膜の上に設けられている請求項1から6のいずれか一項に記載の半導体装置。 - 前記第2樹脂層および前記第4無機絶縁膜は前記第1配線層と重なる位置に開口部を有し、
前記第2配線層は前記開口部に設けられている請求項7に記載の半導体装置。 - 前記半導体層は前記基板の上に積層された複数の化合物半導体層であり、
前記半導体層は、前記複数の化合物半導体層で形成されたメサを有し、
前記メサの側面は前記第1樹脂層で埋め込まれ、
前記メサの面積は前記第1配線層の面積より大きく、
前記第1配線層は前記メサの上に形成されている請求項1から8のいずれか一項に記載の半導体装置。 - 基板の上に半導体層を成長する工程と、
前記半導体層にドライエッチングを行うことでメサを形成する工程と、
前記半導体層の上に、前記メサを埋め込む第1樹脂層を形成する工程と、
前記メサの上に第1配線層を形成する工程と、
前記第1樹脂層の上に第2樹脂層を形成する工程と、
前記第2樹脂層の上に、前記第1配線層と電気的に接続される第2配線層を形成する工程と、
前記第2樹脂層および前記第2配線層を覆う第1無機絶縁膜を形成する工程と、を有し、
前記第1配線層の面積は前記第2配線層の面積よりも大きい半導体装置の製造方法。
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