JP2020038964A - 発光素子及びこれを適用した透明表示装置 - Google Patents
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- ANYCDYKKVZQRMR-UHFFFAOYSA-N lithium;quinoline Chemical compound [Li].N1=CC=CC2=CC=CC=C21 ANYCDYKKVZQRMR-UHFFFAOYSA-N 0.000 claims description 18
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- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
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- 230000004931 aggregating effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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Abstract
Description
図6Aは、単一金属のカソード膜の波長別透過率を、常温と高温保管時において示すグラフであり、図6Bは、弧立電子対を有しない電子輸送層上に合金カソード膜を形成した構造において、高温保管時における電圧−電流密度特性の変化を示すグラフである。
図7Aは、弧立電子対を有しない単一化合物(アントラセン化合物)の電子輸送層上にAg単一膜を形成したときの250時間経過後の表面変化を示すSEM図であり、図7Bは、弧立電子対を有しない二重化合物の電子輸送層上にAg単一膜を形成したときの250時間経過後の表面変化を示すSEM図である。
図8Aは、弧立電子対を有する単一化合物の電子輸送層上にAg単一膜を形成して250時間経過後の表面変化を示すSEM図であり、図8Bは、弧立電子対を有する有機化合物とLiq二重化合物からなる電子輸送層上にAg単一膜を形成して250時間経過後の表面変化を示すSEM図である。
図9A及び図9Bは、弧立電子対を有しない単一化合物の電子輸送層上にAg:Mg合金膜のカソード電極を形成して500時間経過後の表面変化を示すSEM図である。図10A及び図10Bは、弧立電子対を有する有機化合物にYbのドーピングを有する電子輸送層上にAg:Mg合金膜のカソード電極を形成して500時間経過後の表面変化を示すSEM図である。また、図11A及び図11Bは、図9A及び図10Aのそれぞれの波長別透過特性を示すグラフである。
図12A〜図12Cは、第6実験に適用した電子輸送層及び合金カソード電極の積層の様々な例を示す断面図である。そして、図13A〜図13Cは、図12A〜図12Cにそれぞれ相応する電圧及び電流密度特性を示すグラフである。
図15は、図14D(第5実施例)及びその比較例として電子輸送層がリチウムキノリンと第1成分だけからなる構造における電圧対電流密度特性示すグラフである。
110 (反射)アノード電極
120 第2共通層(正孔輸送層)
130,131,132,133 発光層
140 電子輸送層
150 カソード電極
160 第1有機層(キャッピング層)
Claims (15)
- 互いに対向するアノード電極及びカソード電極と、
前記アノード電極とカソード電極との間に位置している発光層と、
前記発光層とカソード電極との間に位置しており、弧立電子対を有する原子を含む複素環式(heterocyclic)化合物の第1成分、及び前記第1成分よりも小さい含有量で電子注入性金属及び電子注入性金属化合物の少なくともいずれか一つを含む第2成分を有する発光素子。 - 前記弧立電子対を有する原子が前記カソード電極をなす金属と結合する電子輸送層とを備える、請求項1に記載の発光素子。
- 前記カソード電極を挟んで前記電子輸送層と反対の面に、前記第1成分を含む第1有機層をさらに備え、
前記電子輸送層と第1有機層はそれぞれ、前記カソード電極の下面と上面に接している、請求項1に記載の発光素子。 - 前記電子輸送層と前記カソード電極との間の上面に、前記電子輸送層において前記弧立電子対を有する原子と前記カソード電極をなす金属との結合を水平面に連続して有する、請求項2に記載の発光素子。
- 前記第1有機層と前記カソード電極との間にある前記カソード電極の第1の表面は、前記第1有機層内の前記弧立電子対を有する原子と前記カソード電極をなす金属との結合を含む、請求項3に記載の発光素子。
- 前記カソード電極と前記電子輸送層との界面は、前記弧立電子対を有する前記原子と前記カソード電極をなす前記金属との前記結合の配列を水平面に連続して有する結合層と、該結合層の上部に層状構造として前記カソード電極をなす金属成分の粒子とを含み、前記層状構造は、前記カソード電極をなす金属成分の粒子の複数の層を備える、請求項4に記載の発光素子。
- 前記カソード電極の前記金属成分は、反射透過性金属又は反射透過性金属合金を含むか、
前記カソード電極は100Å以下の厚さを有する、請求項1に記載の発光素子。 - 前記カソード電極の前記金属成分は、遷移金属をさらに含む、請求項7に記載の発光素子。
- 前記電子注入性金属は、遷移金属、アルカリ金属及びアルカリ土類金属のいずれか一つである、請求項1に記載の発光素子。
- 前記電子注入性金属化合物は、リチウムキノリンを含む、請求項1に記載の発光素子。
- 前記第1有機層に遷移金属をさらに含む、請求項3に記載の発光素子。
- 発光部と透過部とに区分される基板と、
前記発光部に設けられる請求項1〜11のいずれかに記載の発光素子とを備え、
前記カソード電極は前記透過部に延びて位置している、透明表示装置。 - 前記反射アノード電極と前記発光層との間に第2有機層をさらに備え、請求項12に記載の透明表示装置。
- 前記カソード電極を挟んで前記電子輸送層と反対の面に、前記第1成分を含む第1有機層をさらに備え、
前記電子輸送層と第1有機層はそれぞれ、前記カソード電極の下面と上面に接している、請求項12に記載の発光素子。 - 前記電子輸送層と前記カソード電極との間の上面に、前記電子輸送層において前記弧立電子対を有する原子と前記カソード電極をなす金属との結合を水平面に連続して有すか、
前記第1有機層と前記カソード電極との間にあるカソード電極の第1の表面は、前記第1有機層内の前記弧立電子対を有する原子と前記カソード電極をなす金属との結合を含む、請求項13に記載の発光素子。
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