JP6717886B2 - 有機発光素子及びこれを用いた有機発光ディスプレイ装置 - Google Patents
有機発光素子及びこれを用いた有機発光ディスプレイ装置 Download PDFInfo
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- JP6717886B2 JP6717886B2 JP2018131856A JP2018131856A JP6717886B2 JP 6717886 B2 JP6717886 B2 JP 6717886B2 JP 2018131856 A JP2018131856 A JP 2018131856A JP 2018131856 A JP2018131856 A JP 2018131856A JP 6717886 B2 JP6717886 B2 JP 6717886B2
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- 239000010410 layer Substances 0.000 claims description 289
- 229910052751 metal Inorganic materials 0.000 claims description 132
- 239000002184 metal Substances 0.000 claims description 132
- 239000000126 substance Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 23
- 229910052749 magnesium Inorganic materials 0.000 claims description 20
- 229910052736 halogen Inorganic materials 0.000 claims description 15
- 150000002367 halogens Chemical class 0.000 claims description 15
- 239000012044 organic layer Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 58
- 150000002366 halogen compounds Chemical class 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 229910052769 Ytterbium Inorganic materials 0.000 description 16
- 230000002776 aggregation Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 14
- 238000004220 aggregation Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 12
- 230000009257 reactivity Effects 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 229910000861 Mg alloy Inorganic materials 0.000 description 9
- 230000013632 homeostatic process Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910052755 nonmetal Inorganic materials 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 150000001342 alkaline earth metals Chemical class 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 229910001416 lithium ion Inorganic materials 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical group [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 2
- 230000004931 aggregating effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Description
105 薄膜トランジスタ
110 下部電極
140 発光層
170 上部電極
171 第1金属層
172 第2金属層
180 界面補償層
190 キャッピング層
Claims (23)
- 下部電極;
前記下部電極上に位置する少なくとも1層の有機層;
前記有機層上に位置し、前記有機層から出射する光が透過する、Agを含む上部電極;及び
前記上部電極上に、ハロゲン化合物の第1物質とハロゲン又は他の非金属との反応性を有する金属の第2物質を一緒に有する界面補償層を含む、有機発光素子。 - 前記第2物質は、Ba(Barium)、Ce(Cerium)、Cs(Cesium)、Eu(Europium)、Gd(Gadolinium)、K(Kalium)、Li(Lithium)、Lu(Lutetium)、Na(Natrium)、Nd(Neodymium)、Rb(Rubidium)、Sc(Scandium)、Sm(Samarium)、Sr(Strontium)、Yb(Ytterbium)及びY(Yttrium)のいずれか1種以上である、請求項1に記載の有機発光素子。
- 前記界面補償層に、前記上部電極に含まれる金属の第3物質をさらに含む、請求項1に記載の有機発光素子。
- 前記上部電極はMgをさらに含む、請求項1に記載の有機発光素子。
- 前記第1物質は、LiFを含み、前記第2物質は、Ybを含み、
前記Ybの原子比が 前記LiFの原子比よりも大きい、請求項4に記載の有機発光素子。 - 前記界面補償層では、YbとLiFの原子比は1:1より大きく、2:1よりも小さいか同じである、請求項5に記載の有機発光素子。
- 前記界面補償層において、前記Ybより少ない量でMgをさらに含む、請求項5に記載の有機発光素子。
- 前記第2物質は、Ybからなる、請求項5に記載の有機発光素子。
- 前記界面補償層は前記第2物質の原子比が最も高く、前記第1物質と第3物質は同じ原子比を有する、請求項3に記載の有機発光素子。
- 前記界面補償層は 10Åないし30Åの厚さを有する 請求項3に記載の有機発光素子。
- 前記上部電極は少なくとも第1層及び第2層を含み、
前記界面補償層の第1物質は前記有機層と接する前記第1層に含まれた金属とハロゲンの化合物である、請求項1に記載の有機発光素子。 - 前記第1物質はLiFである、請求項11に記載の有機発光素子。
- 前記上部電極は1層以上の金属層が積層されてなり、
前記第2物質は前記上部電極の少なくとも一つの金属層にさらに含まれた、請求項1に記載の有機発光素子。 - 前記第1層はLiFを含み、
前記第2層は前記Agと、Mgを含む、請求項11に記載の有機発光素子。 - 前記第1物質は、LiFを含み、前記第2物質は、Ybを含み、
前記Ybの原子比が 前記LiFの原子比よりも大きい、請求項14に記載の有機発光素子。 - 前記界面補償層では、前記YbとLiFの原子比は1:1より大きく、2:1よりも小さいか同じである、請求項15に記載の有機発光素子。
- 前記界面補償層において、前記第2物質より少ない量でMgをさらに含む、請求項15に記載の有機発光素子。
- 前記第2層のAgはMgの3倍〜10倍の原子比を有する、請求項14に記載の有機発光素子。
- 前記上部電極及び前記界面補償層を合わせた厚さは100Å〜180Åである、請求項1に記載の有機発光素子。
- 前記界面補償層は、10Åないし30Åの厚さを有する、請求項11に記載の有機発光素子。
- 前記界面補償層は、光が出射される前記上部電極に接し上部に位置する、請求項1ないし20のいずれか一項に記載の有機発光素子。
- 複数のサブ画素を有する基板;
前記複数のサブ画素の各々に備えられた薄膜トランジスタ;及び
前記薄膜トランジスタと接続された有機発光素子を含み、
前記有機発光素子は、
下部電極;
前記下部電極上に位置する少なくとも1層の有機層;
前記有機層上に位置し、前記有機層から出射する光が透過する、Agを含む上部電極;及び
前記上部電極上に、ハロゲン化合物の第1物質とハロゲン又は他の非金属との反応性を有する金属の第2物質を一緒に有する界面補償層を含む、有機発光ディスプレイ装置。 - 前記界面補償層上に、透明であり、屈折率1.6ないし2.1の有機化合物からなるキャッピング層をさらに含む、請求項22に記載の有機発光ディスプレイ装置。
Applications Claiming Priority (2)
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KR1020170163769A KR102450340B1 (ko) | 2017-11-30 | 2017-11-30 | 유기 발광 소자 및 이를 이용한 유기 발광 표시 장치 |
KR10-2017-0163769 | 2017-11-30 |
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JP2019102422A JP2019102422A (ja) | 2019-06-24 |
JP6717886B2 true JP6717886B2 (ja) | 2020-07-08 |
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JP2018131856A Active JP6717886B2 (ja) | 2017-11-30 | 2018-07-11 | 有機発光素子及びこれを用いた有機発光ディスプレイ装置 |
Country Status (6)
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US (1) | US10734598B2 (ja) |
JP (1) | JP6717886B2 (ja) |
KR (2) | KR102450340B1 (ja) |
CN (1) | CN109860412B (ja) |
DE (1) | DE102018121544B4 (ja) |
TW (1) | TWI686972B (ja) |
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JP6517694B2 (ja) | 2012-11-06 | 2019-05-22 | オーティーアイ ルミオニクス インコーポレーテッドOti Lumionics Inc. | 導電性コーティングを表面に堆積する方法 |
KR20200093737A (ko) * | 2019-01-28 | 2020-08-06 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20200100901A (ko) * | 2019-02-18 | 2020-08-27 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
WO2021038475A1 (en) * | 2019-08-27 | 2021-03-04 | Oti Lumionics Inc. | Light transmissive electrode for light emitting devices |
CN111477755B (zh) * | 2020-04-23 | 2022-12-06 | 合肥鑫晟光电科技有限公司 | 有机发光二极管器件及其制作方法、和显示面板 |
KR102333517B1 (ko) | 2020-06-24 | 2021-12-01 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220092301A (ko) * | 2020-12-24 | 2022-07-01 | 엘지디스플레이 주식회사 | 백색 발광 소자 및 이를 이용한 표시 장치 |
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DE10117663B4 (de) | 2001-04-09 | 2004-09-02 | Samsung SDI Co., Ltd., Suwon | Verfahren zur Herstellung von Matrixanordnungen auf Basis verschiedenartiger organischer leitfähiger Materialien |
CN100456516C (zh) * | 2005-06-15 | 2009-01-28 | 北京大学 | 顶出光电极及其制备方法 |
KR100932935B1 (ko) * | 2008-03-18 | 2009-12-21 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치 |
JPWO2012023177A1 (ja) | 2010-08-17 | 2013-10-28 | パイオニア株式会社 | 有機発光素子 |
KR101458402B1 (ko) * | 2011-04-01 | 2014-11-06 | 엘지디스플레이 주식회사 | 유기전계 발광소자 |
KR101846410B1 (ko) * | 2011-07-29 | 2018-04-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN103730581B (zh) * | 2012-10-15 | 2016-05-18 | 乐金显示有限公司 | 有机发光装置和使用其的有机发光显示装置 |
CN104009166A (zh) * | 2013-02-26 | 2014-08-27 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
KR102126382B1 (ko) | 2014-02-19 | 2020-06-25 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR101620092B1 (ko) * | 2014-11-06 | 2016-05-13 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 그 제조방법 |
US20170294628A1 (en) * | 2016-04-07 | 2017-10-12 | Samsung Display Co., Ltd. | Organic Light Emitting Diode and Light Emitting Diode Display |
CN106953020B (zh) * | 2016-12-30 | 2020-02-07 | 上海天马有机发光显示技术有限公司 | 一种有机发光显示器件和有机发光显示装置 |
CN106848082B (zh) * | 2017-03-13 | 2019-04-30 | 武汉华星光电技术有限公司 | Oled显示器件及oled显示装置 |
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