JP2019534556A - 表側面型撮像素子およびその素子の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000003384 imaging method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 139
- 239000000463 material Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000002344 surface layer Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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Abstract
Description
p−型ドープされた半導体支持基板、電気絶縁層、および活性層と呼ばれる半導体層を順に有する基板と
前記基板の活性層内のフォトダイオードのマトリックスアレイ
を含んでなる表側面型撮像素子であって、
基板が、支持基板と電気絶縁層の間に、p+型ドープされた半導体エピタキシャル層を有することを特徴とする表側面型撮像素子を提供する。
−p−型ドープされた半導体支持基板を備える工程、
−その支持基板上でp+型ドープされた半導体層をエピタキシャル成長させる工程、
−半導体材料の表層を有するドナー基板を備える工程、
−エピタキシャル層を前記半導体材料層と、電気絶縁層が界面に位置するように結合させる工程、
−半導体活性層が支持基板上に転写されるようにドナー基板を薄くする工程、および
−前記基板の活性層内にフォトダイオードのマトリックスアレイを形成する工程
を含んでなる表側面型撮像素子の製造方法に関するものである。
−直径30cm、厚さ775μm、面取り幅1mmのp+ドープ支持基板(従来の基板に相当する)の場合、露出部分は、基板の裏側面面積、基板の側面積、および面取り部分の面積の和に等しい、すなわち、
π*152+2*π*15*0.0775+π*(152−14.92)=724cm2
であり、
−直径30cm、面取り幅1mmのp−ドープ基板上に形成された厚さ1mmのp+ドープエピタキシャル層(本発明の一態様に相当する)の場合、露出部分は、この層の側面積と面取り部分の面積の和に等しい、すなわち、
2*π*15*0.0001+π*(152−14.92)=9cm2
である。
Claims (10)
- −p−型ドープされた半導体支持基板(1)、電気絶縁層(2)、および活性層と呼ばれる半導体層(3)を順に有する基板と
−前記基板の活性層(3)内のフォトダイオードのマトリックスアレイ
を含んでなる表側面型撮像素子であって、
基板が、支持基板(1)と電気絶縁層(2)の間に、p+型ドープされた半導体エピタキシャル層(4)を有することを特徴とする、表側面型撮像素子。 - エピタキシャル層(4)が支持基板(1)と同じ半導体材料で形成されている、請求項1に記載の素子。
- 支持基板(1)とエピタキシャル層(4)がケイ素で形成されている、請求項2に記載の素子。
- 活性層がケイ素で形成されている、請求項1〜3のいずれかに記載の素子。
- 電気絶縁層(2)の厚さが10から50nmである、請求項1〜4のいずれかに記載の素子。
- エピタキシャル層(4)の厚さが0.1から3μmである、請求項1〜5のいずれかに記載の素子。
- −p−型ドープされた半導体支持基板(1)を備える工程、
−その支持基板(1)上でp+型ドープされた半導体層(4)をエピタキシャル成長させる工程、
−半導体材料の表層(31)を有するドナー基板(30)を備える工程、
−エピタキシャル層(4)を前記半導体材料層(31)と、電気絶縁層(2)が結合界面に位置するように結合させる工程、
−半導体活性層(3)が支持基板(1)上に転写されるようにドナー基板(30)を薄くする工程、および
−前記半導体活性層(3)内にフォトダイオードのマトリックスアレイを形成する工程
を含んでなることを特徴とする、表側面型撮像素子の製造方法。 - 前記表層(31)を区切るための脆化ゾーン(32)をドナー基板(30)内に形成する工程を含み、ドナー基板(30)を薄くすることのなかに、前記脆化ゾーン(32)に沿って切り離すことを含む、請求項7に記載の方法。
- 脆化ゾーン(32)を形成することに、ドナー基板(30)に原子種を注入することを含む、請求項8に記載の方法。
- エピタキシャル層(4)に関して、さらにドーパント拡散バリア層を設ける工程を含む、請求項7〜9のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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FR1659763 | 2016-10-10 | ||
FR1659763A FR3057396B1 (fr) | 2016-10-10 | 2016-10-10 | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
PCT/EP2017/075797 WO2018069310A1 (en) | 2016-10-10 | 2017-10-10 | Front-side type image sensor and method for manufacturing such a sensor |
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JP2019534556A true JP2019534556A (ja) | 2019-11-28 |
JP7051836B2 JP7051836B2 (ja) | 2022-04-11 |
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US (3) | US10903263B2 (ja) |
EP (1) | EP3523826B1 (ja) |
JP (1) | JP7051836B2 (ja) |
KR (1) | KR102457269B1 (ja) |
CN (1) | CN109791938B (ja) |
FR (1) | FR3057396B1 (ja) |
TW (1) | TWI737833B (ja) |
WO (1) | WO2018069310A1 (ja) |
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FR3077923B1 (fr) * | 2018-02-12 | 2021-07-16 | Soitec Silicon On Insulator | Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche |
US11676983B2 (en) | 2020-01-07 | 2023-06-13 | Powertech Technology Inc. | Sensor with dam structure and method for manufacturing the same |
TWI741903B (zh) * | 2020-01-07 | 2021-10-01 | 力成科技股份有限公司 | 感測器及其製造方法 |
Citations (2)
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JP2011014673A (ja) * | 2009-07-01 | 2011-01-20 | Panasonic Corp | Soi基板とその製造方法およびそれを用いた固体撮像装置の製造方法 |
JP2011530826A (ja) * | 2008-08-14 | 2011-12-22 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 埋め込み接地板を備えた半導体構造体の製造方法 |
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JP4235787B2 (ja) * | 2001-10-03 | 2009-03-11 | ソニー株式会社 | 固体撮像素子の製造方法 |
JP4123415B2 (ja) * | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
JP2004134672A (ja) * | 2002-10-11 | 2004-04-30 | Sony Corp | 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置 |
JP2005333070A (ja) * | 2004-05-21 | 2005-12-02 | Sony Corp | 半導体装置の製造方法及び縦型オーバーフロードレイン構造及び電子シャッタ機能を有する表面照射型固体撮像装置並びにその製造方法 |
JP4211696B2 (ja) * | 2004-06-30 | 2009-01-21 | ソニー株式会社 | 固体撮像装置の製造方法 |
US20070045668A1 (en) * | 2005-08-26 | 2007-03-01 | Micron Technology, Inc. | Vertical anti-blooming control and cross-talk reduction for imagers |
US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
EP2200084A1 (en) * | 2008-12-22 | 2010-06-23 | S.O.I. TEC Silicon | Method of fabricating a back-illuminated image sensor |
EP2282332B1 (en) * | 2009-08-04 | 2012-06-27 | S.O.I. TEC Silicon | Method for fabricating a semiconductor substrate |
FR3002812B1 (fr) * | 2013-03-01 | 2016-08-05 | St Microelectronics Crolles 2 Sas | Procede de transfert de couche |
FR3027731B1 (fr) * | 2014-10-24 | 2018-01-05 | Stmicroelectronics Sa | Capteur d'image face avant a courant d'obscurite reduit sur substrat soi |
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- 2016-10-10 FR FR1659763A patent/FR3057396B1/fr active Active
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- 2017-10-06 TW TW106134583A patent/TWI737833B/zh active
- 2017-10-10 KR KR1020197013421A patent/KR102457269B1/ko active IP Right Grant
- 2017-10-10 EP EP17780436.6A patent/EP3523826B1/en active Active
- 2017-10-10 US US16/340,879 patent/US10903263B2/en active Active
- 2017-10-10 JP JP2019519328A patent/JP7051836B2/ja active Active
- 2017-10-10 CN CN201780061756.9A patent/CN109791938B/zh active Active
- 2017-10-10 WO PCT/EP2017/075797 patent/WO2018069310A1/en active Application Filing
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2020
- 2020-12-23 US US17/133,316 patent/US11552123B2/en active Active
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2011530826A (ja) * | 2008-08-14 | 2011-12-22 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 埋め込み接地板を備えた半導体構造体の製造方法 |
JP2011014673A (ja) * | 2009-07-01 | 2011-01-20 | Panasonic Corp | Soi基板とその製造方法およびそれを用いた固体撮像装置の製造方法 |
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Publication number | Publication date |
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CN109791938B (zh) | 2023-04-28 |
EP3523826A1 (en) | 2019-08-14 |
CN109791938A (zh) | 2019-05-21 |
WO2018069310A1 (en) | 2018-04-19 |
TW201826514A (zh) | 2018-07-16 |
KR20190061070A (ko) | 2019-06-04 |
JP7051836B2 (ja) | 2022-04-11 |
FR3057396A1 (fr) | 2018-04-13 |
KR102457269B1 (ko) | 2022-10-20 |
US20230127950A1 (en) | 2023-04-27 |
US11552123B2 (en) | 2023-01-10 |
TWI737833B (zh) | 2021-09-01 |
EP3523826B1 (en) | 2021-11-17 |
US10903263B2 (en) | 2021-01-26 |
US20190267425A1 (en) | 2019-08-29 |
FR3057396B1 (fr) | 2018-12-14 |
US20210118936A1 (en) | 2021-04-22 |
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