FR3002812B1 - Procede de transfert de couche - Google Patents
Procede de transfert de coucheInfo
- Publication number
- FR3002812B1 FR3002812B1 FR1351846A FR1351846A FR3002812B1 FR 3002812 B1 FR3002812 B1 FR 3002812B1 FR 1351846 A FR1351846 A FR 1351846A FR 1351846 A FR1351846 A FR 1351846A FR 3002812 B1 FR3002812 B1 FR 3002812B1
- Authority
- FR
- France
- Prior art keywords
- transfer method
- layer transfer
- layer
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1351846A FR3002812B1 (fr) | 2013-03-01 | 2013-03-01 | Procede de transfert de couche |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1351846A FR3002812B1 (fr) | 2013-03-01 | 2013-03-01 | Procede de transfert de couche |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3002812A1 FR3002812A1 (fr) | 2014-09-05 |
FR3002812B1 true FR3002812B1 (fr) | 2016-08-05 |
Family
ID=48856749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1351846A Expired - Fee Related FR3002812B1 (fr) | 2013-03-01 | 2013-03-01 | Procede de transfert de couche |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR3002812B1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10903263B2 (en) | 2016-10-10 | 2021-01-26 | Soitec | Front-side type image sensor and method for manufacturing such a sensor |
US11742215B2 (en) | 2020-07-29 | 2023-08-29 | Infineon Technologies Ag | Methods for forming a semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3040108B1 (fr) * | 2015-08-12 | 2017-08-11 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030087503A1 (en) * | 1994-03-10 | 2003-05-08 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
EP0989593A3 (fr) * | 1998-09-25 | 2002-01-02 | Canon Kabushiki Kaisha | Dispositif et procédé de séparation de substrat, et procédé de fabrication de susbtrat |
US20050082526A1 (en) * | 2003-10-15 | 2005-04-21 | International Business Machines Corporation | Techniques for layer transfer processing |
FR2977075A1 (fr) * | 2011-06-23 | 2012-12-28 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat semi-conducteur, et substrat semi-conducteur |
-
2013
- 2013-03-01 FR FR1351846A patent/FR3002812B1/fr not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10903263B2 (en) | 2016-10-10 | 2021-01-26 | Soitec | Front-side type image sensor and method for manufacturing such a sensor |
US11552123B2 (en) | 2016-10-10 | 2023-01-10 | Soitec | Front-side type image sensors |
US11742215B2 (en) | 2020-07-29 | 2023-08-29 | Infineon Technologies Ag | Methods for forming a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
FR3002812A1 (fr) | 2014-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 4 |
|
ST | Notification of lapse |
Effective date: 20171130 |