JP2019530227A5 - - Google Patents
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- Publication number
- JP2019530227A5 JP2019530227A5 JP2019513978A JP2019513978A JP2019530227A5 JP 2019530227 A5 JP2019530227 A5 JP 2019530227A5 JP 2019513978 A JP2019513978 A JP 2019513978A JP 2019513978 A JP2019513978 A JP 2019513978A JP 2019530227 A5 JP2019530227 A5 JP 2019530227A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- fin
- layer
- channel region
- disposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003989 dielectric material Substances 0.000 claims 45
- 239000000758 substrate Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 12
- 239000000463 material Substances 0.000 claims 8
- 238000005229 chemical vapour deposition Methods 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/266,840 US9882051B1 (en) | 2016-09-15 | 2016-09-15 | Fin field effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions |
| US15/266,840 | 2016-09-15 | ||
| PCT/US2017/046525 WO2018052591A1 (en) | 2016-09-15 | 2017-08-11 | Fin field effect transistors (fets) (finfets) employing dielectric material layers to apply stress to channel regions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019530227A JP2019530227A (ja) | 2019-10-17 |
| JP2019530227A5 true JP2019530227A5 (enExample) | 2020-08-27 |
| JP6974446B2 JP6974446B2 (ja) | 2021-12-01 |
Family
ID=59684098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019513978A Active JP6974446B2 (ja) | 2016-09-15 | 2017-08-11 | 誘電体材料層を使用してチャネル領域に応力を加えるフィン電界効果トランジスタ（ＦＥＴ）（ＦｉｎＦＥＴ） |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9882051B1 (enExample) |
| EP (1) | EP3513437B1 (enExample) |
| JP (1) | JP6974446B2 (enExample) |
| KR (1) | KR102550579B1 (enExample) |
| CN (1) | CN109844957A (enExample) |
| BR (1) | BR112019004507B1 (enExample) |
| CA (1) | CA3032965A1 (enExample) |
| WO (1) | WO2018052591A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10109507B2 (en) * | 2016-06-01 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fluorine contamination control in semiconductor manufacturing process |
| US11211243B2 (en) * | 2018-11-21 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of filling gaps with carbon and nitrogen doped film |
| KR102760190B1 (ko) * | 2019-05-16 | 2025-01-23 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7081395B2 (en) | 2003-05-23 | 2006-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon strain engineering accomplished via use of specific shallow trench isolation fill materials |
| JP2007207837A (ja) | 2006-01-31 | 2007-08-16 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| US7939862B2 (en) | 2007-05-30 | 2011-05-10 | Synopsys, Inc. | Stress-enhanced performance of a FinFet using surface/channel orientations and strained capping layers |
| US7943531B2 (en) * | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
| US7915112B2 (en) | 2008-09-23 | 2011-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate stress film for mobility enhancement in FinFET device |
| US9953885B2 (en) * | 2009-10-27 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI shape near fin bottom of Si fin in bulk FinFET |
| US8426923B2 (en) * | 2009-12-02 | 2013-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-gate semiconductor device and method |
| DE102010002410B4 (de) | 2010-02-26 | 2017-03-02 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verformungsgedächtnistechnologie in verformten SOI-Substraten von Halbleiterbauelementen |
| US8937353B2 (en) * | 2010-03-01 | 2015-01-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual epitaxial process for a finFET device |
| JP2013093438A (ja) * | 2011-10-26 | 2013-05-16 | Renesas Electronics Corp | 半導体装置の製造方法 |
| US8698199B2 (en) | 2012-01-11 | 2014-04-15 | United Microelectronics Corp. | FinFET structure |
| US8941187B2 (en) | 2012-01-13 | 2015-01-27 | Globalfoundries Inc. | Strain engineering in three-dimensional transistors based on strained isolation material |
| CN103681846B (zh) | 2012-09-20 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
| US9263585B2 (en) * | 2012-10-30 | 2016-02-16 | Globalfoundries Inc. | Methods of forming enhanced mobility channel regions on 3D semiconductor devices, and devices comprising same |
| US8759874B1 (en) * | 2012-11-30 | 2014-06-24 | Stmicroelectronics, Inc. | FinFET device with isolated channel |
| US8877588B2 (en) | 2013-02-11 | 2014-11-04 | Globalfoundries Inc. | Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting device |
| US9721955B2 (en) | 2014-04-25 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for SRAM FinFET device having an oxide feature |
| US9306067B2 (en) | 2014-08-05 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nonplanar device and strain-generating channel dielectric |
| TWI655774B (zh) * | 2015-08-12 | 2019-04-01 | 聯華電子股份有限公司 | 半導體元件及其製作方法 |
| US9614086B1 (en) * | 2015-12-30 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conformal source and drain contacts for multi-gate field effect transistors |
-
2016
- 2016-09-15 US US15/266,840 patent/US9882051B1/en active Active
-
2017
- 2017-08-11 CA CA3032965A patent/CA3032965A1/en active Pending
- 2017-08-11 BR BR112019004507-4A patent/BR112019004507B1/pt active IP Right Grant
- 2017-08-11 KR KR1020197007266A patent/KR102550579B1/ko active Active
- 2017-08-11 JP JP2019513978A patent/JP6974446B2/ja active Active
- 2017-08-11 CN CN201780056420.3A patent/CN109844957A/zh active Pending
- 2017-08-11 EP EP17755390.6A patent/EP3513437B1/en active Active
- 2017-08-11 WO PCT/US2017/046525 patent/WO2018052591A1/en not_active Ceased
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