JP2019519688A - プラスチック表面を洗浄する方法 - Google Patents
プラスチック表面を洗浄する方法 Download PDFInfo
- Publication number
- JP2019519688A JP2019519688A JP2019514856A JP2019514856A JP2019519688A JP 2019519688 A JP2019519688 A JP 2019519688A JP 2019514856 A JP2019514856 A JP 2019514856A JP 2019514856 A JP2019514856 A JP 2019514856A JP 2019519688 A JP2019519688 A JP 2019519688A
- Authority
- JP
- Japan
- Prior art keywords
- water
- flushing
- plastic surface
- electrolyzed water
- deionized water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004033 plastic Substances 0.000 title claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000008367 deionised water Substances 0.000 claims abstract description 28
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000005868 electrolysis reaction Methods 0.000 claims description 21
- 238000011010 flushing procedure Methods 0.000 claims description 20
- 239000003792 electrolyte Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000011109 contamination Methods 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 7
- 150000001768 cations Chemical class 0.000 description 5
- -1 hydrogen ions Chemical class 0.000 description 5
- 239000003014 ion exchange membrane Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003011 anion exchange membrane Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000005341 cation exchange Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-O oxonium Chemical compound [OH3+] XLYOFNOQVPJJNP-UHFFFAOYSA-O 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229940085991 phosphate ion Drugs 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/4618—Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/4618—Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
- C02F2001/46195—Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water characterised by the oxidation reduction potential [ORP]
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2201/00—Apparatus for treatment of water, waste water or sewage
- C02F2201/46—Apparatus for electrochemical processes
- C02F2201/461—Electrolysis apparatus
- C02F2201/46105—Details relating to the electrolytic devices
- C02F2201/46115—Electrolytic cell with membranes or diaphragms
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/18—Glass; Plastics
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Hydrology & Water Resources (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Water Supply & Treatment (AREA)
- Environmental & Geological Engineering (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Water Treatment By Electricity Or Magnetism (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
Description
b)プラスチック表面が電解水で洗い流されるステップ、
c)プラスチック表面が脱イオン水で洗い流されるステップ。
2 陽極室
4 陽極
6 陰極室
8 陰極
10 イオン交換膜
12 陽極室流入部
14 陰極室流入部
16 矢印
18 陽極室流出部
20 陰極室流出部
22 陽極液混合タンク
24 引込配管
26 陰極配管
28 陰極タンク
30 塗布装置
32 陰極液混合タンク
34 陽極配管
36 陽極タンク
Claims (10)
- プラスチック表面を洗浄する方法、特に金属の汚れおよび/または粒子を除去する方法において、前記方法は次の各ステップ、すなわち、
a)プラスチック表面が脱イオン水で洗い流されるステップ、
b)プラスチック表面が電解水で洗い流されるステップ、
c)プラスチック表面が脱イオン水で洗い流されるステップ、
を有する方法。 - 電解水での洗い流しは7よりも低いpH値を有する陽極水での洗い流しを含むことを特徴とする、請求項1に記載の方法。
- 電解水での洗い流しは7よりも高いpH値を有する陰極水での洗い流しを含むことを特徴とする、請求項1または2に記載の方法。
- プラスチック表面が陽極水で洗い流されてから、陰極水で洗い流されることを特徴とする、請求項3に記載の方法。
- 電解水のpH値および/または酸化還元電位が事前設定された値に合わせて調整されることを特徴とする、請求項1から4のいずれか1項に記載の方法。
- 2つの電極(4,8)を有し、電解質が添加された水が導入される電気分解セル(1)で電解水が製作され、電解質の濃度および/または両方の前記電極(4,8)の間に流れる電流が制御パラメータとして利用されることによって、電解水のpH値および/または酸化還元電位が調整されることを特徴とする、請求項5に記載の方法。
- プラスチック表面の洗い流しは各々の前記方法ステップで5秒〜600秒、好ましくは15秒〜90秒続くことを特徴とする、請求項1から6のいずれか1項に記載の方法。
- 異なる方法ステップでの洗い流しが異なる長さの間、続くことを特徴とする、請求項1から7のいずれか1項に記載の方法。
- 脱イオン水および/または電解水の温度は10℃〜70℃であることを特徴とする、請求項1から8のいずれか1項に記載の方法。
- 請求項1から9のいずれか1項に記載の方法を実施する装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016109771.3A DE102016109771B4 (de) | 2016-05-27 | 2016-05-27 | Verfahren zum Reinigen einer Kunststoffoberfläche |
DE102016109771.3 | 2016-05-27 | ||
PCT/EP2017/062693 WO2017203007A1 (de) | 2016-05-27 | 2017-05-24 | Verfahren zum reinigen einer kunststoffoberfläche |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019519688A true JP2019519688A (ja) | 2019-07-11 |
Family
ID=59067625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019514856A Pending JP2019519688A (ja) | 2016-05-27 | 2017-05-24 | プラスチック表面を洗浄する方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US11872603B2 (ja) |
EP (1) | EP3487639A1 (ja) |
JP (1) | JP2019519688A (ja) |
KR (1) | KR102424386B1 (ja) |
CN (1) | CN110099755A (ja) |
DE (1) | DE102016109771B4 (ja) |
IL (1) | IL263210A (ja) |
SG (1) | SG11201810844VA (ja) |
TW (1) | TWI800482B (ja) |
WO (1) | WO2017203007A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201804881D0 (en) * | 2018-03-27 | 2018-05-09 | Lam Res Ag | Method of producing rinsing liquid |
CN109530374B (zh) * | 2018-11-21 | 2021-07-27 | 上海超硅半导体有限公司 | 一种晶圆盒清洗方法 |
CN110880449B (zh) * | 2019-09-30 | 2022-07-19 | 王偲偲 | 一种硅片清洗方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6114233A (ja) * | 1984-06-29 | 1986-01-22 | N V C:Kk | プラスチツク製品の洗浄方法 |
DE69306542T2 (de) * | 1993-01-08 | 1997-05-15 | Nec Corp | Verfahren und Vorrichtung zur Nassbehandlung von festen Oberflächen |
US5599438A (en) * | 1994-03-25 | 1997-02-04 | Nec Corporation | Method for producing electrolyzed water |
JP2743823B2 (ja) * | 1994-03-25 | 1998-04-22 | 日本電気株式会社 | 半導体基板のウエット処理方法 |
JP2737643B2 (ja) * | 1994-03-25 | 1998-04-08 | 日本電気株式会社 | 電解活性水の生成方法および生成装置 |
JP2830733B2 (ja) * | 1994-03-25 | 1998-12-02 | 日本電気株式会社 | 電解水生成方法および電解水生成機構 |
JP3181795B2 (ja) * | 1994-10-28 | 2001-07-03 | オルガノ株式会社 | 電解水製造装置 |
JPH08126873A (ja) | 1994-10-28 | 1996-05-21 | Nec Corp | 電子部品等の洗浄方法及び装置 |
JP3313263B2 (ja) | 1995-04-15 | 2002-08-12 | 株式会社東芝 | 電解水生成方法及びその生成装置、半導体製造装置 |
JP2832171B2 (ja) * | 1995-04-28 | 1998-12-02 | 信越半導体株式会社 | 半導体基板の洗浄装置および洗浄方法 |
TW338713B (en) * | 1995-09-06 | 1998-08-21 | Sharp Kk | A dishwasher |
JP3299662B2 (ja) | 1995-09-06 | 2002-07-08 | シャープ株式会社 | 食器洗い機 |
JP3590470B2 (ja) * | 1996-03-27 | 2004-11-17 | アルプス電気株式会社 | 洗浄水生成方法および洗浄方法ならびに洗浄水生成装置および洗浄装置 |
US6273107B1 (en) * | 1997-12-05 | 2001-08-14 | Texas Instruments Incorporated | Positive flow, positive displacement rinse tank |
JP3378543B2 (ja) * | 1999-11-26 | 2003-02-17 | 株式会社半導体先端テクノロジーズ | ウェーハ・キャリア洗浄方法 |
JP4462513B2 (ja) * | 2000-01-12 | 2010-05-12 | 有限会社コヒーレントテクノロジー | 電解水の製造方法、洗浄水、及び洗浄方法 |
KR100389917B1 (ko) * | 2000-09-06 | 2003-07-04 | 삼성전자주식회사 | 산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수 |
JP2002153827A (ja) * | 2000-11-19 | 2002-05-28 | Nofil Corp | 洗浄方法 |
EP1461474B1 (en) * | 2001-12-05 | 2011-11-30 | Oculus Innovative Sciences, Inc. | Method and apparatus for producing negative and positive oxidative reductive potential (orp) water |
KR100528286B1 (ko) * | 2004-09-02 | 2005-11-15 | 주식회사 에스에프에이 | 기판 세정장치 및 세정방법 |
JP2006255603A (ja) | 2005-03-17 | 2006-09-28 | Hitachi Chem Co Ltd | 電解水での洗浄方法及び洗浄装置 |
JP2007123770A (ja) | 2005-10-31 | 2007-05-17 | Kaijo Corp | ドアシェル洗浄装置及びドアシェル洗浄方法 |
WO2008138357A1 (en) * | 2007-05-13 | 2008-11-20 | Magued George Amin | Electrolyzed alkaline water multipurpose cleaner ph 12.5+/-1.5 |
JP2010155435A (ja) * | 2009-01-05 | 2010-07-15 | Asahi Kasei E-Materials Corp | デブリー除去方法及びデブリー除去装置 |
CN102658270B (zh) | 2012-05-09 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | 一种晶圆盒清洗装置及其清洗方法 |
US9579697B2 (en) | 2012-12-06 | 2017-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of cleaning FOUP |
KR102107987B1 (ko) * | 2012-12-27 | 2020-05-08 | 세메스 주식회사 | 기판 처리 장치 |
CN104043605A (zh) * | 2013-03-13 | 2014-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 载体清洗装置和载体清洗方法 |
JP2015041756A (ja) * | 2013-08-23 | 2015-03-02 | 株式会社東芝 | ウェハキャリアの洗浄方法 |
JP6114233B2 (ja) | 2014-06-20 | 2017-04-12 | 株式会社バンダイナムコエンターテインメント | プログラム及びゲーム装置 |
-
2016
- 2016-05-27 DE DE102016109771.3A patent/DE102016109771B4/de active Active
-
2017
- 2017-05-24 CN CN201780032085.3A patent/CN110099755A/zh active Pending
- 2017-05-24 SG SG11201810844VA patent/SG11201810844VA/en unknown
- 2017-05-24 KR KR1020187037276A patent/KR102424386B1/ko active IP Right Grant
- 2017-05-24 JP JP2019514856A patent/JP2019519688A/ja active Pending
- 2017-05-24 EP EP17730392.2A patent/EP3487639A1/de not_active Withdrawn
- 2017-05-24 US US16/304,836 patent/US11872603B2/en active Active
- 2017-05-24 WO PCT/EP2017/062693 patent/WO2017203007A1/de unknown
- 2017-05-26 TW TW106117602A patent/TWI800482B/zh active
-
2018
- 2018-11-22 IL IL263210A patent/IL263210A/en unknown
Also Published As
Publication number | Publication date |
---|---|
SG11201810844VA (en) | 2019-01-30 |
US11872603B2 (en) | 2024-01-16 |
KR20190035621A (ko) | 2019-04-03 |
EP3487639A1 (de) | 2019-05-29 |
CN110099755A (zh) | 2019-08-06 |
IL263210A (en) | 2018-12-31 |
TWI800482B (zh) | 2023-05-01 |
TW201742677A (zh) | 2017-12-16 |
DE102016109771A1 (de) | 2017-11-30 |
US20200043766A1 (en) | 2020-02-06 |
WO2017203007A1 (de) | 2017-11-30 |
DE102016109771B4 (de) | 2020-09-10 |
KR102424386B1 (ko) | 2022-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3198899B2 (ja) | ウエット処理方法 | |
KR100223695B1 (ko) | 반도체기판,유리기판,전자부품및 이들의 제조장치부품의 세정방법및장치 | |
KR100389917B1 (ko) | 산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수 | |
KR20060007045A (ko) | 습식 처리된 층 내의 결함 감소 방법 및 장치 | |
JP2019519688A (ja) | プラスチック表面を洗浄する方法 | |
KR20030005777A (ko) | 전해이온수 및 희석된 hf용액을 동시에 사용하는 반도체세정 공정 | |
JP2859081B2 (ja) | ウェット処理方法及び処理装置 | |
JP2014237865A (ja) | 電解銅めっき装置 | |
TW201412977A (zh) | 處理裝置、製造處理液之方法及製造電子裝置之方法 | |
US20180080140A1 (en) | Gap fill process stability monitoring of an electroplating process using a potential-controlled exit step | |
JP2004083932A (ja) | 電解処理装置 | |
US20050155869A1 (en) | Electropolishing method for removing particles from wafer surface | |
JP6317580B2 (ja) | 半導体装置の製造方法 | |
US20050109627A1 (en) | Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features | |
CN109306476A (zh) | 用于化学和/或电解表面处理的系统 | |
JPH10296198A (ja) | 洗浄方法 | |
KR20080015477A (ko) | 세정 장치 및 세정 방법 | |
JP2010227811A (ja) | ワークの洗浄方法、ワーク、時計 | |
JP3663048B2 (ja) | ウェット処理方法 | |
JP2018184626A (ja) | 洗浄システム | |
TWI822514B (zh) | 基板固持器、鍍覆裝置、鍍覆方法、及記憶媒體 | |
TW436333B (en) | Process and apparatus for cleaning semiconductor wafer/thin film | |
JP2000219982A (ja) | ウェット処理方法 | |
JPS6114233A (ja) | プラスチツク製品の洗浄方法 | |
KR20190000147U (ko) | 전착도장장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20191023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20191023 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20191025 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200520 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210210 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210210 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210426 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210917 |