JP2019513294A5 - - Google Patents

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JP2019513294A5
JP2019513294A5 JP2018538865A JP2018538865A JP2019513294A5 JP 2019513294 A5 JP2019513294 A5 JP 2019513294A5 JP 2018538865 A JP2018538865 A JP 2018538865A JP 2018538865 A JP2018538865 A JP 2018538865A JP 2019513294 A5 JP2019513294 A5 JP 2019513294A5
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Japan
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single crystal
crystal semiconductor
dielectric layer
insulating layer
substrate
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JP2018538865A
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Japanese (ja)
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JP2019513294A (ja
JP7002456B2 (ja
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Priority claimed from PCT/US2017/020619 external-priority patent/WO2017155805A1/en
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JP2018538865A 2016-03-07 2017-03-03 低温流動性酸化物層を含む半導体オンインシュレータ構造およびその製造方法 Active JP7002456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662304376P 2016-03-07 2016-03-07
US62/304,376 2016-03-07
PCT/US2017/020619 WO2017155805A1 (en) 2016-03-07 2017-03-03 Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof

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JP2020206234A Division JP7071486B2 (ja) 2016-03-07 2020-12-11 低温流動性酸化物層を含む半導体オンインシュレータ構造およびその製造方法

Publications (3)

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JP2019513294A JP2019513294A (ja) 2019-05-23
JP2019513294A5 true JP2019513294A5 (https=) 2020-04-16
JP7002456B2 JP7002456B2 (ja) 2022-01-20

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JP2018538865A Active JP7002456B2 (ja) 2016-03-07 2017-03-03 低温流動性酸化物層を含む半導体オンインシュレータ構造およびその製造方法
JP2020206234A Active JP7071486B2 (ja) 2016-03-07 2020-12-11 低温流動性酸化物層を含む半導体オンインシュレータ構造およびその製造方法

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Country Status (5)

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US (1) US10593748B2 (https=)
EP (2) EP3758050A1 (https=)
JP (2) JP7002456B2 (https=)
SG (1) SG11201806851RA (https=)
WO (1) WO2017155805A1 (https=)

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