JP2019513174A5 - - Google Patents

Download PDF

Info

Publication number
JP2019513174A5
JP2019513174A5 JP2018550413A JP2018550413A JP2019513174A5 JP 2019513174 A5 JP2019513174 A5 JP 2019513174A5 JP 2018550413 A JP2018550413 A JP 2018550413A JP 2018550413 A JP2018550413 A JP 2018550413A JP 2019513174 A5 JP2019513174 A5 JP 2019513174A5
Authority
JP
Japan
Prior art keywords
sih
group
precursor
forming
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018550413A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019513174A (ja
JP6868640B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2017/023779 external-priority patent/WO2017165626A1/en
Publication of JP2019513174A publication Critical patent/JP2019513174A/ja
Publication of JP2019513174A5 publication Critical patent/JP2019513174A5/ja
Application granted granted Critical
Publication of JP6868640B2 publication Critical patent/JP6868640B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018550413A 2016-03-23 2017-03-23 Ｓｉ含有膜形成用組成物並びにそれを製造及び使用する方法 Active JP6868640B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662312352P 2016-03-23 2016-03-23
US62/312,352 2016-03-23
PCT/US2017/023779 WO2017165626A1 (en) 2016-03-23 2017-03-23 Si-containing film forming compositions and methods of making and using the same

Publications (3)

Publication Number Publication Date
JP2019513174A JP2019513174A (ja) 2019-05-23
JP2019513174A5 true JP2019513174A5 (enExample) 2020-04-30
JP6868640B2 JP6868640B2 (ja) 2021-05-12

Family

ID=59900919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018550413A Active JP6868640B2 (ja) 2016-03-23 2017-03-23 Ｓｉ含有膜形成用組成物並びにそれを製造及び使用する方法

Country Status (7)

Country Link
US (1) US11407922B2 (enExample)
EP (1) EP3433302B1 (enExample)
JP (1) JP6868640B2 (enExample)
KR (2) KR102492744B1 (enExample)
CN (1) CN109476848B (enExample)
TW (2) TWI724141B (enExample)
WO (1) WO2017165626A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI716333B (zh) * 2015-03-30 2021-01-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
JP6756689B2 (ja) 2017-10-13 2020-09-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US10510852B2 (en) 2017-11-28 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k feature formation processes and structures formed thereby
US11499014B2 (en) * 2019-12-31 2022-11-15 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane
KR102844501B1 (ko) * 2020-01-31 2025-08-11 주식회사 유피케미칼 실리콘 전구체 화합물, 이를 포함하는 실리콘-함유 막 형성용 조성물 및 실리콘-함유 막 형성 방법
CN115605530B (zh) * 2020-05-07 2024-09-27 默克专利有限公司 聚碳硅氮烷和包含其的组合物以及使用其制造含硅膜的方法

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0764642B2 (ja) 1986-06-13 1995-07-12 東燃株式会社 窒化物系セラミツクスの製法
JP3230029B2 (ja) 1994-05-30 2001-11-19 富士通株式会社 Ｉｉｉ−ｖ族化合物半導体結晶成長方法
US5874368A (en) 1997-10-02 1999-02-23 Air Products And Chemicals, Inc. Silicon nitride from bis(tertiarybutylamino)silane
US6841256B2 (en) 1999-06-07 2005-01-11 Honeywell International Inc. Low dielectric constant polyorganosilicon materials generated from polycarbosilanes
US6489030B1 (en) 2000-04-14 2002-12-03 Honeywell International, Inc. Low dielectric constant films used as copper diffusion barrier
JP4868639B2 (ja) 2000-06-12 2012-02-01 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いた薄膜の製造方法
JP4196246B2 (ja) 2000-11-17 2008-12-17 株式会社トリケミカル研究所 膜形成材料、膜形成方法、及び素子
JP2002167438A (ja) * 2000-11-29 2002-06-11 Jsr Corp ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料
AU2002337310A1 (en) 2001-10-26 2003-05-06 Epichem Limited Improved precursors for chemical vapour deposition
JP2003151972A (ja) 2001-11-15 2003-05-23 Tri Chemical Laboratory Inc 酸化膜、酸化膜形成方法、半導体素子
JP4116283B2 (ja) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
JP4021653B2 (ja) 2001-11-30 2007-12-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｃｖｄ法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
CN1868041A (zh) 2002-08-18 2006-11-22 阿维扎技术公司 氧化硅和氧氮化硅的低温沉积
JP4358492B2 (ja) 2002-09-25 2009-11-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
US7531679B2 (en) 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7446217B2 (en) 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7172792B2 (en) 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7972663B2 (en) 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
KR101022949B1 (ko) 2002-12-20 2011-03-16 어플라이드 머티어리얼스, 인코포레이티드 고품질 저온 실리콘질화물층 형성 방법 및 장치
US6940173B2 (en) 2003-01-29 2005-09-06 International Business Machines Corporation Interconnect structures incorporating low-k dielectric barrier films
JP4265409B2 (ja) 2003-02-13 2009-05-20 三菱マテリアル株式会社 Ｓｉ−Ｓｉ結合を有する有機Ｓｉ含有化合物を用いたＳｉ含有薄膜の形成方法
US7579496B2 (en) * 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US20050227017A1 (en) * 2003-10-31 2005-10-13 Yoshihide Senzaki Low temperature deposition of silicon nitride
JP2005213633A (ja) 2004-02-02 2005-08-11 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
US7098150B2 (en) 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
US20060012014A1 (en) 2004-07-15 2006-01-19 International Business Machines Corporation Reliability of low-k dielectric devices with energy dissipative layer
US7358317B2 (en) 2004-09-22 2008-04-15 Jsr Corporation Polycarbosilane and method of producing the same
JP2006096675A (ja) 2004-09-28 2006-04-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 新規なアミノジシランおよび炭窒化珪素膜の形成方法
JP4756128B2 (ja) 2004-10-20 2011-08-24 日揮触媒化成株式会社 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜
JP2006152063A (ja) 2004-11-26 2006-06-15 Jsr Corp 新規ポリカルボシランおよびその製造方法、膜形成用組成物、ならびに膜およびその形成方法
US20060121192A1 (en) 2004-12-02 2006-06-08 Jurcik Benjamin J Liquid precursor refill system
US7892648B2 (en) 2005-01-21 2011-02-22 International Business Machines Corporation SiCOH dielectric material with improved toughness and improved Si-C bonding
US20060286819A1 (en) 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
ES2265291B1 (es) 2005-07-22 2008-03-01 Universidad De Alcala Nuevos dendrimeros carbosilanos, su preparacion y sus usos.
DE602006019499D1 (de) 2006-04-03 2011-02-17 Air Liquide Eine pentakis(dimethylamino)disilanvorstufe enthaltende verbindung, und verfahren zu deren herstellung
US8377511B2 (en) 2006-04-03 2013-02-19 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US7442822B2 (en) * 2006-09-01 2008-10-28 Air Products And Chemicals, Inc. Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins
US20080124815A1 (en) 2006-11-03 2008-05-29 International Business Machines Corporation Method for post cap ild/imd repair with uv irradiation
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
CN100559167C (zh) * 2007-04-23 2009-11-11 陕西师范大学 对硝基芳烃敏感的单分子层聚硅烷荧光传感薄膜的制备方法
WO2009008041A1 (ja) 2007-07-06 2009-01-15 Fujitsu Limited 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
US20090096106A1 (en) 2007-10-12 2009-04-16 Air Products And Chemicals, Inc. Antireflective coatings
US8071160B2 (en) 2007-10-29 2011-12-06 Integrated Surface Technologies Surface coating process
JP2011504522A (ja) 2007-11-06 2011-02-10 ブラゴーン オサケ ユキチュア 反射防止コーティング用カルボシランポリマー組成物
US9034105B2 (en) 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
JP5317089B2 (ja) 2008-01-23 2013-10-16 独立行政法人物質・材料研究機構 成膜方法および絶縁膜
KR20130043084A (ko) 2010-02-17 2013-04-29 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 ＳｉＣＯＨ 로우-Ｋ 필름의 증착 방법
EP2553141A4 (en) 2010-04-01 2013-08-21 Air Liquide DEPOSITION OF FILMS CONTAINING METAL NITRIDES USING A COMBINATION OF AMINOUS AND HALOGENATED METAL PRECURSORS
US8853856B2 (en) 2010-06-22 2014-10-07 International Business Machines Corporation Methodology for evaluation of electrical characteristics of carbon nanotubes
US8196945B2 (en) 2010-06-22 2012-06-12 Pedal Lock Partnership Bicycle pedal with integrated cable lock
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
JP5969253B2 (ja) 2012-02-10 2016-08-17 東京応化工業株式会社 表面処理剤及び表面処理方法
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US9337018B2 (en) * 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US9243324B2 (en) 2012-07-30 2016-01-26 Air Products And Chemicals, Inc. Methods of forming non-oxygen containing silicon-based films
US10279959B2 (en) 2012-12-11 2019-05-07 Versum Materials Us, Llc Alkoxysilylamine compounds and applications thereof
KR101583232B1 (ko) 2012-12-31 2016-01-07 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
WO2014143410A1 (en) 2013-03-15 2014-09-18 Kinestral Technologies, Inc. Electrochromic lithium nickel group 6 mixed metal oxides
JP6155063B2 (ja) 2013-03-19 2017-06-28 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及びプログラム
US9796739B2 (en) 2013-06-26 2017-10-24 Versum Materials Us, Llc AZA-polysilane precursors and methods for depositing films comprising same
US10453675B2 (en) * 2013-09-20 2019-10-22 Versum Materials Us, Llc Organoaminosilane precursors and methods for depositing films comprising same
US9920077B2 (en) * 2013-09-27 2018-03-20 L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof
US10023958B2 (en) 2013-11-22 2018-07-17 Applied Materials, Inc. Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors
US9233990B2 (en) 2014-02-28 2016-01-12 Air Products And Chemicals, Inc. Organoaminosilanes and methods for making same
CN103881101A (zh) 2014-03-18 2014-06-25 天津大学 一种碳氮化硅陶瓷用聚碳硅氮烷前驱体及其制备方法
WO2015198970A1 (ja) * 2014-06-25 2015-12-30 旭化成イーマテリアルズ株式会社 空隙を有するポリイミドフィルム及びその製造方法
US20170190720A1 (en) 2014-07-10 2017-07-06 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Alkylamino-substituted carbosilane precursors
WO2016049154A1 (en) 2014-09-23 2016-03-31 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Carbosilane substituted amine precursors for deposition of si-containing films and methods thereof
US9879340B2 (en) * 2014-11-03 2018-01-30 Versum Materials Us, Llc Silicon-based films and methods of forming the same
TWI716333B (zh) * 2015-03-30 2021-01-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合

Similar Documents

Publication Publication Date Title
JP2019513174A5 (enExample)
CN107002236B (zh) 用于沉积含Si膜的碳硅烷取代的胺前体以及其方法
JP6242026B2 (ja) Ａｌｄ／ｃｖｄシリコン含有膜用のオルガノシラン前駆体
KR101820397B1 (ko) 알콕시아미노실란 화합물 및 이의 응용품
CN101835847B (zh) 能形成致密硅质薄膜的含聚硅氮烷的组合物
CN103124734B (zh) 含氢硅烷衍生物、其制造方法及含硅薄膜的制造法
JP2016525119A (ja) Ａｌｄ／ｃｖｄケイ素含有膜用途の六配位ケイ素含有前駆体
US20180044357A1 (en) Process for the generation of thin inorganic films
JP2007051363A5 (enExample)
EP3286250B1 (en) Composition for forming coating film and method for forming coating film using same
KR101659610B1 (ko) 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법
JP7636422B2 (ja) シリコン前駆体化合物、これを含むシリコン含有膜形成用組成物及びシリコン含有膜形成方法
CN108431013A (zh) 二硅烷基胺和聚硅烷基胺的合成
US11407922B2 (en) Si-containing film forming compositions and methods of making and using the same
KR20170038855A (ko) 무기 박막의 제조 방법
US20170190720A1 (en) Alkylamino-substituted carbosilane precursors
Naka et al. Catalytic deprotonative functionalization of propargyl silyl ethers with imines
JP2019518811A (ja) 緻密なシリカ質膜形成用組成物
US20170218509A1 (en) Chemical vapor deposition raw material comprising organic ruthenium compound and chemical vapor deposition method using chemical vapor deposition raw material
JP2018177860A (ja) 膜形成組成物
JP2018177860A5 (enExample)
JP6668287B2 (ja) 膜形成組成物およびそれを用いた膜形成方法
GB1439037A (en) Process for manufacturing aminofunctional polysiloxanes
US20230193462A1 (en) Precursors and related methods
TWI902750B (zh) 矽前體化合物、包含該矽前體化合物的用於形成含矽膜的組合物及用於形成含矽膜的方法