JP2019513081A - 触媒含有酸素輸送膜 - Google Patents
触媒含有酸素輸送膜 Download PDFInfo
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- JP2019513081A JP2019513081A JP2018549814A JP2018549814A JP2019513081A JP 2019513081 A JP2019513081 A JP 2019513081A JP 2018549814 A JP2018549814 A JP 2018549814A JP 2018549814 A JP2018549814 A JP 2018549814A JP 2019513081 A JP2019513081 A JP 2019513081A
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- doped zirconia
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- porous
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- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 90
- 239000001301 oxygen Substances 0.000 title claims abstract description 89
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 126
- 239000000203 mixture Substances 0.000 claims abstract description 69
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- 229910002083 4 mol-% Y2O3 partially Stabilized ZrO2 Inorganic materials 0.000 claims 4
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- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims 1
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- HJGMWXTVGKLUAQ-UHFFFAOYSA-N oxygen(2-);scandium(3+) Chemical compound [O-2].[O-2].[O-2].[Sc+3].[Sc+3] HJGMWXTVGKLUAQ-UHFFFAOYSA-N 0.000 description 3
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
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- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- 238000013459 approach Methods 0.000 description 1
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- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
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- 239000003574 free electron Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
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- 150000002823 nitrates Chemical class 0.000 description 1
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明は、United States Department of Energyによって認められたCooperative Agreement No.DE−FC26−07NT43088下に政府支援を得てなされた。政府は、本発明について一定の権利を有する。
Claims (19)
- 酸素イオン複合膜を生成する方法であって、
(Ln1−xAx)wCr1−yByO3−δ、ドープジルコニア、触媒金属M、及び細孔形成剤の第1の粒子混合物を含有する第1の層を、多孔質支持体上に形成することであって、式中、Lnが、La、Y、Pr、Ce、又はSmであり、Aが、Ca又はSrであり、Bが、Fe、Mn、Co、Ni、Al、Ti、又はこれらの組み合わせであり、wが、約0.9〜約1.0であり、xが、約0.1〜約0.3であり、yが、約0.1〜約0.7であり、δが、前記組成物を電荷中性の状態にする値であり、触媒金属Mが、触媒金属又は触媒金属の酸化物、炭酸塩、又は硝酸塩であり、前記触媒金属が、Ru、Pd、Pt、Rh、Ni、Co、又はこれらの組み合わせから選択され、
焼結されたときに、前記第1の層が、総固体質量の体積百分率に基づき、約20体積%〜約70体積%の前記(Ln1−xAx)wCr1−yByO3−δと、約30体積%〜約80体積%の前記ドープジルコニアと、任意に約0.1体積%〜約20体積%の前記触媒金属Mとを含有するように、前記第1の混合物が、前記(Ln1−xAx)wCr1−yByO3−δと、前記ドープジルコニアと、前記触媒金属Mとを含有する、形成することと、
(Ln1−xAx)wCr1−yByO3−δ及び前記ドープジルコニアの第2の粒子混合物を含有するが、細孔形成剤を含有しない第2の層を、前記第1の層上に形成することであって、式中、Lnが、La、Y、Pr、Ce、又はSmであり、Aが、Ca又はSrであり、Bが、Fe、Mn、Co、Ni、Al、Ti、又はこれらの組み合わせであり、wが、約0.9〜約1.0であり、xが、約0.1〜約0.3であり、yが、約0.1〜約0.7であり、δが、前記組成物を電荷中性の状態にする値であり、
焼結されたときに、前記第2の層が、総固体質量の体積百分率に基づき、約20体積%〜約70体積%の前記(Ln1−xAx)wCr1−yByO3−δと、約30体積%〜約80体積%の前記ドープジルコニアとを含有するように、前記第2の混合物が、前記(Ln1−xAx)wCr1−yByO3−δと前記ドープジルコニアとを含有する、形成することと、
前記第1の層が、前記第1の粒子混合物を含有する多孔質塊に部分的に焼結して、それにより多孔質燃料酸化層を提供し、前記第2の層が、前記第2の粒子混合物を含有する緻密化された塊に完全に焼結して、それにより緻密分離層を提供するように、前記第1の層、前記第2の層、及び前記多孔質支持体を加熱することと、を含む、方法。 - 窒素雰囲気において前記第1の層、前記第2の層、及び前記多孔質支持体を加熱する前に、(Ln1−xAx)wCr1−yByO3−δ、前記ドープジルコニア、及び細孔形成剤の第3の粒子混合物を含有する第3の層が、前記第2の層上に形成され、式中、Lnが、La、Y、Pr、Ce、又はSmであり、Aが、Ca又はSrであり、Bが、Fe、Mn、Co、Ni、Al、Ti、又はこれらの組み合わせであり、wが、約0.9〜約1.0であり、xが、約0.1〜約0.3であり、yが、約0.1〜約0.7であり、δが、前記組成物を電荷中性の状態にする値であり、
焼結されたときに、前記第3の層が、総固体質量の体積百分率に基づき、約20体積%〜約70体積%の前記(Ln1−xAx)wCr1−yByO3−δと、約30体積%〜約80体積%の前記ドープジルコニアとを含有するように、前記第3の混合物が、前記(Ln1−xAx)wCr1−yByO3−δ及び前記ドープジルコニアの第3の体積比を有し、続いて、前記第1の層、前記第2の層、前記第3の層、及び前記多孔質支持体を加熱し、前記第1の層が、前記第1の粒子混合物を含有する多孔質塊に部分的に焼結して、それにより多孔質燃料酸化層を提供し、前記第2の層が、前記第2の粒子混合物を含有する緻密化された塊に完全に焼結して、それにより緻密分離層を提供し、前記第3の層が加熱され、これにより前記第3の層が、前記第3の粒子混合物を含有する多孔質塊に部分的に焼結して、それにより多孔質表面交換層を提供する、請求項1に記載の方法。 - 前記ドープジルコニアが、10Sc1YSZ又は10Sc1CeSZ又は10Sc1Ce1YSZである、請求項2に記載の方法。
- 前記第1の粒子混合物中の前記(Ln1−xAx)wCr1−yByO3−δが、(La1−xSrx)wCr1−yFeyO3−δであり、式中、wが、0.95であり、xが、0.2であり、yが、0.3であり、前記第2の粒子混合物中の前記(Ln1−xAx)wCr1−yByO3−δが、(La1−xSrx)wCr1−yFeyO3−δであり、式中、wが、0.95であり、xが、0.2であり、yが、0.3であり、前記第3の粒子混合物中の前記(Ln1−xAx)wCr1−yByO3−δが、(La1−xSrx)wCr1−yFeyO3−δであり、式中、wが、0.95であり、xが、0.2であり、yが、0.3であり、
前記焼結した多孔質支持体が、ドープ酸化ジルコニウム、又はMgO及びMgAl2O4の混合物から形成される、請求項3に記載の方法。 - 総固体質量の体積百分率に基づき、前記第1の層が、20〜60体積%の(Ln1−xAx)wCr1−yByO3−δと、40〜80体積%の前記ドープジルコニアと、任意に1〜15体積%の前記触媒金属Mとを含有し、前記第2の層が、20〜60体積%の(Ln1−xAx)wCr1−yByO3−δと、40〜80体積%の前記ドープジルコニアとを含有し、前記第3の層が、20〜60体積%の(Ln1−xAx)wCr1−yByO3−δと、40〜80体積%の前記ドープジルコニアとを含有する、請求項4に記載の方法。
- 前記多孔質支持体が、管状又は平面状の構成を有する、請求項5に記載の方法。
- 前記多孔質支持体が、4YSZから形成され、任意に約950〜約1200℃の範囲の温度で加熱され、これにより、前記多孔質支持体が、前記多孔質支持体上に前記第1の層を形成する前に完全には焼結されず、前記多孔質支持体上に形成された後の前記第1の層が、前記第1の層上に前記第2の層をコーティングする前に周囲温度で乾燥され、
前記第1の層、前記第2の層、及び前記多孔質支持体が、約1350℃〜約1450℃の温度で加熱される、請求項1に記載の方法。 - 前記第3の層が、約1250℃〜約1350℃の温度で加熱される、請求項7に記載の方法。
- 前記多孔質支持体が、4YSZから形成され、任意に約950〜約1200℃の範囲の温度で加熱され、これにより、前記多孔質支持体が、前記多孔質支持体上に前記第1の層を形成する前に完全には焼結されず、前記第1の層、前記第2の層、前記第3の層、及び前記多孔質支持体が、不活性雰囲気において約1350℃〜約1450℃の温度で加熱され、前記第1の層、前記第2の層、及び/又は前記第3の層が、任意にスラリーコーティングによって形成される、請求項2に記載の方法。
- 前記ドープジルコニアが、10Sc1YSZ又は10Sc1CeSZ又は10Sc1Ce1YSZである、請求項9に記載の方法。
- 前記多孔質支持体が、4YSZである、請求項10に記載の方法。
- 酸素イオン複合膜であって、
前記酸素イオン複合膜に対して、多孔質燃料酸化層及び緻密分離層をそれぞれ提供する第1の層と第2の層とを多孔質支持体上に含み、
前記層のうちの前記第1の層が、(Ln1−xAx)wCr1−yByO3−δ、ドープジルコニア、及び任意に触媒金属Mの混合物を含有し、式中、Lnが、La、Y、Pr、Ce、又はSmであり、Aが、Ca又はSrであり、Bが、Fe、Mn、Co、Ni、Al、Ti、又はこれらの組み合わせであり、wが、約0.9〜約1.0であり、xが、約0.1〜約0.3であり、yが、約0.1〜約0.6であり、Mが、Ru、Pd、Pt、Rh、Ni、又はこれらの組み合わせであり、前記層のうちの前記第2の層が、(Ln1−xAx)wCr1−yByO3−δ及びドープジルコニアの混合物を含有し、式中、Aが、Ca又はSrであり、Bが、Fe、Mn、Co、Ni、Al、Ti、又はこれらの組み合わせであり、wが、約0.9〜約1.0であり、xが、約0.1〜約0.3であり、yが、約0.1〜約0.7であり、
総固体質量の体積百分率に基づき、前記層のうちの前記第1の層が、約30体積%〜約70体積%の前記(Ln1−xAx)wCr1−yByO3−δと、約30体積%〜約70体積%の前記ドープジルコニアと、任意に約0.1体積%〜約20体積%の前記触媒金属Mとを含有し、前記層のうちの前記第2の層が、約30体積%〜約70体積%の前記(Ln1−xAx)wCr1−yByO3−δと、約30体積%〜約70体積%の前記ドープジルコニアとを含有する、酸素イオン複合膜。 - 第3の層が、前記第2の層上に位置して、多孔質表面交換層を形成し、第3の層もまた、(Ln1−xAx)wCr1−yByO3−δ及び前記ドープジルコニアの前記混合物を含有し、式中、Lnが、La、Y、Pr、Ce、又はSmであり、Aが、Ca又はSrであり、Bが、Fe、Mn、Co、Ni、Al、Ti、又はこれらの組み合わせであり、wが、約0.9〜約1.0であり、xが、約0.1〜約0.3であり、yが、約0.1〜約0.7であり、
前記第3の層が、総固体質量の約20体積%〜約70体積%の(Ln1−xAx)wCr1−yByO3−δの第3の体積百分率で、前記(Ln1−xAx)wCr1−yByO3−δと前記ドープジルコニアとを含有する、請求項12に記載の酸素イオン複合膜。 - 前記ドープジルコニアが、10Sc1YSZ又は10Sc1CeSZ又は10Sc1Ce1YSZである、請求項13に記載の酸素イオン複合膜。
- 前記第1の層内の前記(Ln1−xAx)wCr1−yByO3−δが、(La1−xSrx)wCr1−yFeyO3−δであり、式中、wが、0.95であり、xが、0.2であり、yが、0.3であり、
前記第2の層内の前記(Ln1−xAx)wCr1−yByO3−δが、(La1−xSrx)wCr1−yFeyO3−δであり、式中、wが、0.95であり、xが、0.2であり、yが、0.3であり、
前記第3の層内の前記(Ln1−xAx)wCr1−yByO3−δが、(La1−xSrx)wCr1−yFeyO3−δであり、式中、wが、0.95であり、xが、0.2であり、yが、0.3であり、
前記焼結した多孔質支持体が、安定化した酸化ジルコニア、又はMgO及びMgAl2O4の混合物から形成される、請求項14に記載の酸素イオン複合膜。 - 総固体質量の体積百分率に基づき、前記層のうちの前記第1の層が、約30体積%の(Ln1−xAx)wCr1−yByO3−δと、約70体積%のドープジルコニアとを含有し、前記層のうちの前記第2の層が、約30体積%の(Ln1−xAx)wCr1−yByO3−δと、約70体積%のドープジルコニアとを含有し、前記層のうちの前記第3の層が、約30体積%の(Ln1−xAx)wCr1−yByO3−δと、約70体積%のドープジルコニアとを含有する、請求項15に記載の酸素イオン複合膜。
- 前記多孔質支持体が、管状又は平面状の構成を有する、請求項16に記載の酸素イオン複合膜。
- 前記焼結した多孔質支持体が、4YSZから形成される、請求項17に記載の酸素複合膜。
- 前記加熱工程が、窒素雰囲気、空気、形成ガス雰囲気、CO2、アルゴン、又はこれらの混合物中で行われる、請求項1に記載の方法。
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US9771644B2 (en) | 2013-11-08 | 2017-09-26 | Praxair S.T. Technology, Inc. | Method and apparatus for producing diffusion aluminide coatings |
WO2015084729A1 (en) | 2013-12-02 | 2015-06-11 | Praxair Technology, Inc. | Method and system for producing hydrogen using an oxygen transport membrane based reforming system with secondary reforming |
CN105980666B (zh) | 2014-02-12 | 2019-04-09 | 普莱克斯技术有限公司 | 用于生成电力的基于氧传输膜反应器的方法和系统 |
US9365466B2 (en) | 2014-03-05 | 2016-06-14 | Praxair Technology, Inc. | Method and system for producing a liquid hydrocarbon product from a Fischer-Tropsch process using a synthesis gas produced from an oxygen transport membrane based reforming reactor |
JP6137147B2 (ja) | 2014-11-28 | 2017-05-31 | 株式会社村田製作所 | 積層セラミックコンデンサ及び積層セラミックコンデンサの製造方法 |
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CN109070014A (zh) | 2018-12-21 |
WO2017172238A1 (en) | 2017-10-05 |
KR20180130107A (ko) | 2018-12-06 |
KR102154420B1 (ko) | 2020-09-10 |
EP3436185A1 (en) | 2019-02-06 |
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