JP2019512685A5 - - Google Patents

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Publication number
JP2019512685A5
JP2019512685A5 JP2018546550A JP2018546550A JP2019512685A5 JP 2019512685 A5 JP2019512685 A5 JP 2019512685A5 JP 2018546550 A JP2018546550 A JP 2018546550A JP 2018546550 A JP2018546550 A JP 2018546550A JP 2019512685 A5 JP2019512685 A5 JP 2019512685A5
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Japan
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voltage
transistor
node
circuit
coupled
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JP2018546550A
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Japanese (ja)
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JP7189402B2 (ja
JP2019512685A (ja
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Priority claimed from US15/058,444 external-priority patent/US10094863B2/en
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Priority to JP2022128621A priority Critical patent/JP2022172144A/ja
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JP2018546550A 2016-03-02 2017-03-02 高分解能電力電子測定 Active JP7189402B2 (ja)

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Application Number Priority Date Filing Date Title
JP2022128621A JP2022172144A (ja) 2016-03-02 2022-08-12 高分解能電力電子測定

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/058,444 2016-03-02
US15/058,444 US10094863B2 (en) 2016-03-02 2016-03-02 High-resolution power electronics measurements
PCT/US2017/020535 WO2017151982A1 (en) 2016-03-02 2017-03-02 High-resolution power electronics measurements

Related Child Applications (1)

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JP2022128621A Division JP2022172144A (ja) 2016-03-02 2022-08-12 高分解能電力電子測定

Publications (3)

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JP2019512685A JP2019512685A (ja) 2019-05-16
JP2019512685A5 true JP2019512685A5 (https=) 2020-04-09
JP7189402B2 JP7189402B2 (ja) 2022-12-14

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JP2018546550A Active JP7189402B2 (ja) 2016-03-02 2017-03-02 高分解能電力電子測定
JP2022128621A Pending JP2022172144A (ja) 2016-03-02 2022-08-12 高分解能電力電子測定

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JP2022128621A Pending JP2022172144A (ja) 2016-03-02 2022-08-12 高分解能電力電子測定

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US (2) US10094863B2 (https=)
EP (1) EP3423843B1 (https=)
JP (2) JP7189402B2 (https=)
CN (1) CN108738350B (https=)
WO (1) WO2017151982A1 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6415566B2 (ja) * 2014-08-01 2018-10-31 日立オートモティブシステムズ株式会社 電圧検出装置
WO2018120072A1 (en) * 2016-12-30 2018-07-05 Texas Instruments Incorporated Total harmonic distortion (thd) controlled clip detector and automatic gain limiter (agl)
US10707673B2 (en) * 2017-03-24 2020-07-07 Ford Global Technologies, Llc Protection circuit for oscilloscope measurement channel
US11374402B2 (en) 2017-03-24 2022-06-28 Ford Global Technologies, Llc Protection circuit for oscilloscope measurement channel
JP7108173B2 (ja) * 2018-01-22 2022-07-28 ミツミ電機株式会社 スイッチング電源装置および直流電源装置
US11067620B2 (en) * 2018-08-21 2021-07-20 Texas Instruments Incorporated HEMT wafer probe current collapse screening
EP3845915B1 (en) * 2018-09-20 2022-11-02 Huawei Technologies Co., Ltd. Photoelectron component and manufacturing method therefor
US10766745B2 (en) 2018-09-25 2020-09-08 Argus Elevator LLC Universal and software-configurable elevator door monitor
CN109756691B (zh) * 2018-11-30 2020-12-29 宁波环球广电科技有限公司 一种通用型高精度电控均衡补偿装置
US11085961B2 (en) * 2018-12-19 2021-08-10 Texas Instruments Incorporated Power transistor leakage current with gate voltage less than threshold
CN111426928B (zh) * 2018-12-24 2021-08-20 东南大学 一种氮化镓器件动态电阻测试电路
US11067629B2 (en) * 2019-06-03 2021-07-20 Teradyne, Inc. Automated test equipment for testing high-power electronic components
US11740278B2 (en) * 2019-08-02 2023-08-29 Infineon Technologies Ag Electronic test equipment apparatus and methods of operating thereof
US11131695B2 (en) 2019-08-15 2021-09-28 Analog Devices, Inc. Measuring electrical energy consumption
US11675011B2 (en) * 2019-08-15 2023-06-13 Analog Devices International Unlimited Company Switch condition monitoring
US11448686B2 (en) * 2019-09-18 2022-09-20 Texas Instruments Incorporated RDSON/dRON measurement method and circuit for high voltage HEMTs
GB2588133A (en) * 2019-10-08 2021-04-21 Ea Tech Limited Partial discharge monitoring device, system and method for a substation asset provided with a voltage presence indication system (VPIS)
CN114414977B (zh) * 2019-10-30 2023-12-19 英诺赛科（珠海）科技有限公司 量测高电子移动率晶体管之装置
JP7348032B2 (ja) * 2019-11-05 2023-09-20 ローム株式会社 電流測定回路、電流測定方法
CN111060793B (zh) * 2019-11-13 2021-09-28 南京航空航天大学 直流固态功率控制器的功率管导通电压的在线测量电路
CN110794280B (zh) * 2019-11-20 2025-04-29 北京华峰测控技术股份有限公司 氮化镓功率管动态电阻的软切测量电路及测量方法
TWI764509B (zh) * 2021-01-12 2022-05-11 宏汭精測科技股份有限公司 用以測試元件動態特性之通用開關操作裝置及方法
US11747390B2 (en) * 2021-01-15 2023-09-05 Innoscience (Suzhou) Technology Co., Ltd. Apparatus and method for measuring dynamic on-resistance of GaN-based device
US11979143B2 (en) * 2021-08-09 2024-05-07 Stmicroelectronics S.R.L. Electronic circuit testing methods and systems
US12243613B2 (en) * 2022-02-24 2025-03-04 Changxin Memory Technologies, Inc. Voltage output test circuit, voltage divider output circuit, and memory
WO2023164900A1 (en) * 2022-03-03 2023-09-07 Innoscience (suzhou) Semiconductor Co., Ltd. Apparatus and method for measuring dynamic on-resistance of nitride-based switching device
CN114740297B (zh) * 2022-04-12 2022-12-02 湖南炬神电子有限公司 一种功率器件测试方法及系统
WO2024011436A1 (en) * 2022-07-13 2024-01-18 Innoscience (Zhuhai) Technology Co., Ltd. Apparatus for measuring dynamic on-resistance of nitride-based semiconductor device
JP2024064121A (ja) * 2022-10-27 2024-05-14 富士電機株式会社 試験装置および試験方法
EP4379399A1 (en) * 2022-11-30 2024-06-05 Hitachi Energy Ltd Parameter estimation for voltage measurements in noisy environments
SI26495A (sl) * 2023-04-07 2024-10-30 Mahle International Gmbh Vmesni sistem in metoda za merjenje napetosti na močnostnih tranzistorjih
US20250130269A1 (en) * 2023-10-24 2025-04-24 Infineon Technologies Canada Inc. Power transistor age detection
TWI871833B (zh) * 2023-11-14 2025-02-01 南亞科技股份有限公司 電流測量系統及其操作方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2883619A (en) 1956-02-29 1959-04-21 Tektronix Inc Electrical probe
JPH051828Y2 (https=) * 1985-11-08 1993-01-18
US5140198A (en) * 1989-08-30 1992-08-18 Seiko Corporation Image canceling mixer circuit on an integrated circuit chip
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
JP3475822B2 (ja) * 1998-12-07 2003-12-10 株式会社デンソー パワーｍｏｓｆｅｔのオン抵抗測定方法及びパワーｍｏｓｆｅｔのオン抵抗測定装置並びにパワーｍｏｓｆｅｔ
JP2002043916A (ja) * 2000-07-28 2002-02-08 Matsushita Electric Ind Co Ltd 電圧検出回路および半導体装置
GB0028867D0 (en) * 2000-11-28 2001-01-10 Avecia Ltd Field effect translators,methods for the manufacture thereof and materials therefor
EP1429222B1 (en) * 2002-12-09 2006-08-02 Siemens Aktiengesellschaft Buck converter
US6812730B2 (en) * 2003-03-13 2004-11-02 Advanced Micro Devices, Inc. Method for independent measurement of mosfet source and drain resistances
JP2006184047A (ja) * 2004-12-27 2006-07-13 Agilent Technol Inc Ｆｅｔの特性測定方法
TW200716999A (en) * 2005-06-16 2007-05-01 Agilent Technologies Inc Method for measuring FET characteristics
CN1968013B (zh) * 2005-11-17 2010-05-05 南京理工大学 微波毫米波低相位差宽频带数字衰减器集成电路
DE102005055954A1 (de) * 2005-11-24 2007-05-31 Robert Bosch Gmbh Schaltungsanordnung und Verfahren zur Funktionsüberprüfung eines Leistungstransistors
FR2896642B1 (fr) * 2006-01-23 2009-01-09 Valeo Equip Electr Moteur Commande d'un transistor mos
JP2008076197A (ja) * 2006-09-20 2008-04-03 Eastman Kodak Co 試験装置
US7518378B2 (en) * 2007-02-13 2009-04-14 Keithley Instruments, Inc. Cable compensation for pulsed I-V measurements
JP4553395B2 (ja) * 2007-06-15 2010-09-29 シャープ株式会社 オシロスコープおよびそれを用いた半導体評価装置
US7960997B2 (en) 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
US20100127331A1 (en) * 2008-11-26 2010-05-27 Albert Ratnakumar Asymmetric metal-oxide-semiconductor transistors
JP5336232B2 (ja) 2009-03-18 2013-11-06 住友電工デバイス・イノベーション株式会社 スイッチング回路及びその試験方法
US8288767B2 (en) * 2010-01-04 2012-10-16 National Taiwan University Thin-film transistor and forming method thereof
JP2011220767A (ja) 2010-04-07 2011-11-04 Panasonic Corp 電流検出回路
EP2564220B1 (en) * 2010-04-30 2016-04-20 Katholieke Universiteit Leuven Voltage clamping circuit and use thereof
US8847575B2 (en) * 2011-10-14 2014-09-30 Infineon Technologies Ag Circuit arrangement
JP2013106464A (ja) * 2011-11-15 2013-05-30 Mitsubishi Electric Corp 半導体装置
JP5664536B2 (ja) 2011-12-19 2015-02-04 株式会社デンソー 電流検出回路および半導体集積回路装置
US8854065B2 (en) * 2012-01-13 2014-10-07 Infineon Technologies Austria Ag Current measurement in a power transistor
CN104272594B (zh) * 2012-05-01 2018-04-27 大岛俊蔵 过电流保护电源装置
JP6056411B2 (ja) * 2012-11-22 2017-01-11 富士通株式会社 電圧検出回路及びトランジスタの特性測定方法
US9678140B2 (en) * 2013-09-10 2017-06-13 Texas Instruments Incorporated Ultra fast transistor threshold voltage extraction
JP6237038B2 (ja) * 2013-09-20 2017-11-29 富士通株式会社 カスコードトランジスタ及びカスコードトランジスタの制御方法
JP6293623B2 (ja) * 2014-09-05 2018-03-14 株式会社東芝 半導体検査装置

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