CN108738350B - 高分辨率功率电子器件测量 - Google Patents

高分辨率功率电子器件测量 Download PDF

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CN108738350B
CN108738350B CN201780013783.9A CN201780013783A CN108738350B CN 108738350 B CN108738350 B CN 108738350B CN 201780013783 A CN201780013783 A CN 201780013783A CN 108738350 B CN108738350 B CN 108738350B
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transistor
voltage
terminal
high voltage
circuit
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CN108738350A (zh
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S·R·巴尔
G·L·史密斯
D·瑞兹弗拉瑞斯
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Texas Instruments Inc
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Texas Instruments Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/04—Voltage dividers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0084—Measuring voltage only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • G01R31/2639—Circuits therefor for testing other individual devices for testing field-effect devices, e.g. of MOS-capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Amplifiers (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Power Conversion In General (AREA)
CN201780013783.9A 2016-03-02 2017-03-02 高分辨率功率电子器件测量 Active CN108738350B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/058,444 2016-03-02
US15/058,444 US10094863B2 (en) 2016-03-02 2016-03-02 High-resolution power electronics measurements
PCT/US2017/020535 WO2017151982A1 (en) 2016-03-02 2017-03-02 High-resolution power electronics measurements

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CN108738350A CN108738350A (zh) 2018-11-02
CN108738350B true CN108738350B (zh) 2022-05-13

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US (2) US10094863B2 (https=)
EP (1) EP3423843B1 (https=)
JP (2) JP7189402B2 (https=)
CN (1) CN108738350B (https=)
WO (1) WO2017151982A1 (https=)

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US11448686B2 (en) * 2019-09-18 2022-09-20 Texas Instruments Incorporated RDSON/dRON measurement method and circuit for high voltage HEMTs
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CN114414977B (zh) * 2019-10-30 2023-12-19 英诺赛科（珠海）科技有限公司 量测高电子移动率晶体管之装置
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CN111060793B (zh) * 2019-11-13 2021-09-28 南京航空航天大学 直流固态功率控制器的功率管导通电压的在线测量电路
CN110794280B (zh) * 2019-11-20 2025-04-29 北京华峰测控技术股份有限公司 氮化镓功率管动态电阻的软切测量电路及测量方法
TWI764509B (zh) * 2021-01-12 2022-05-11 宏汭精測科技股份有限公司 用以測試元件動態特性之通用開關操作裝置及方法
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US11979143B2 (en) * 2021-08-09 2024-05-07 Stmicroelectronics S.R.L. Electronic circuit testing methods and systems
US12243613B2 (en) * 2022-02-24 2025-03-04 Changxin Memory Technologies, Inc. Voltage output test circuit, voltage divider output circuit, and memory
WO2023164900A1 (en) * 2022-03-03 2023-09-07 Innoscience (suzhou) Semiconductor Co., Ltd. Apparatus and method for measuring dynamic on-resistance of nitride-based switching device
CN114740297B (zh) * 2022-04-12 2022-12-02 湖南炬神电子有限公司 一种功率器件测试方法及系统
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US20170254842A1 (en) 2017-09-07
EP3423843A1 (en) 2019-01-09
CN108738350A (zh) 2018-11-02
JP7189402B2 (ja) 2022-12-14
US10094863B2 (en) 2018-10-09
EP3423843B1 (en) 2025-05-07
JP2019512685A (ja) 2019-05-16
WO2017151982A1 (en) 2017-09-08
EP3423843A4 (en) 2019-04-03
JP2022172144A (ja) 2022-11-15
US20190094276A1 (en) 2019-03-28

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