JP2019505092A - マルチゾーン静電チャックのためのセンサシステム - Google Patents
マルチゾーン静電チャックのためのセンサシステム Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 238000009529 body temperature measurement Methods 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 13
- 239000004642 Polyimide Substances 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 6
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- 230000013011 mating Effects 0.000 description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 229910033181 TiB2 Inorganic materials 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001084 poly(chloroprene) Polymers 0.000 description 2
- 229920006260 polyaryletherketone Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Drying Of Semiconductors (AREA)
- Gripping On Spindles (AREA)
- Chemical Vapour Deposition (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Control Of Resistance Heating (AREA)
Abstract
Description
各々の温度センサ141は、自身が配置されるセル200の温度を測定し、及び/又は、そのセル200内の部分的に調整可能なヒータ140の操作性を決定することができる。更に、主抵抗ヒータにより画定されるゾーン内にある1以上の温度センサ141は、ゾーンの温度を測定し、及び/又は、主抵抗ヒータ154の操作性を決定するために用いることができる。単一の温度センサ141は部分的に調整可能なヒータ140と主抵抗ヒータ154の両方の操作性を決定するために用いることができる。
Claims (15)
- 基板支持アセンブリ用のヒータアセンブリであって、
本体と、
本体内に配置された1以上の主抵抗加熱要素と、
本体内に配置された複数の部分的に調整可能な加熱要素と、
本体内に配置された複数の温度センサを備え、複数の温度センサのうちの1以上が複数の部分的に調整可能な加熱要素のうちの1に近接して配置されるヒータアセンブリ。 - 前記本体はポリイミドを含む可撓性本体である請求項1記載のヒータアセンブリ。
- 前記複数の温度センサのうちの1以上は抵抗温度検出器(RTD)を備える請求項1記載のヒータアセンブリ。
- 前記RTDが堆積された白金を含む請求項3記載のヒータアセンブリ。
- 前記複数の温度センサのうちの1以上が熱電対を備える請求項1記載のヒータアセンブリ。
- 複数の部分的に調整可能な加熱要素に電気的に接続された部分的に調整可能なヒータコントローラであって、
複数の部分的に調整可能な加熱要素の第2の部分的に調整可能な加熱要素に対し、複数の部分的に調整可能な加熱要素の第1の部分的に調整可能な加熱要素の出力を独立して制御し、
第1の部分的に調整可能な加熱要素に近接する複数の温度センサのうちの第1の温度センサから温度測定値を受信し、
第1の部分的に調整可能な加熱要素が温度測定に基づいて故障したか否かを決定するように制御する部分的に調整可能なヒータコントローラを備える請求項1記載のヒータアセンブリ。 - 部分的に調整可能なヒータコントローラは、更に、
第1の部分的に調整可能な加熱要素について温度測定値と温度設定値の間の差を決定し、
その差が閾値を超えているかどうかを決定し、
差が閾値を超えると判定したことに応答して、第1の部分的に調整可能な加熱要素の設定を調整する請求項6記載のヒータアセンブリ。 - 複数の部分的に調整可能な加熱要素のうちの1以上の部分的に調整可能な加熱要素から分離された第1の金属層と、
第1の金属層を1以上の部分的に調整可能な加熱要素に接続する第1の複数のビアであって、第1の金属層は1以上の部分的に調整可能な加熱要素の共通接地として作用する第1の複数のビアと、
複数の温度センサのうちの1以上の温度センサから分離された第2の金属層と、
第2の金属層を1以上の温度センサに接続する第2の複数のビアであって、第2の金属層は1以上の温度センサの共通接地として作用する第2の複数のビアを備える請求項1記載のヒータアセンブリ。 - 基板支持アセンブリであって、
セラミック本体を含む静電チャックと、
セラミック本体内に配置された電極と、
セラミック本体内に配置された複数の加熱要素と、
1)セラミック本体内、又は、2)セラミック本体の底面上の少なくとも1に配置された複数の温度センサであって、複数の温度センサのうちの1以上が、複数の加熱要素の内の1の加熱要素に近接して配置され、加熱要素の操作性を検出するために用いられる基板支持アセンブリ。 - 複数の加熱要素は、1以上の主抵抗加熱要素と複数の部分的に調整可能な加熱要素とを含み、複数の部分的に調整可能な加熱要素の各々は複数の温度センサから個別の温度センサに近接している請求項9記載の基板支持アセンブリ。
- 複数の温度センサは複数の抵抗温度検出器(RTD)を含む請求項9記載の基板支持アセンブリ。
- 複数のRTDのうちの1以上は堆積された白金を含む請求項11記載の基板支持アセンブリ。
- 複数の加熱要素に電気的に接続されたヒータコントローラを含み、ヒータコントローラは、
複数の加熱要素の第2の加熱要素に対して複数の加熱要素の第1の加熱要素の出力を独立して制御し、
第1の加熱要素に近接する複数の温度センサのうちの第1の温度センサから温度測定値を受け取り、
温度測定値に基づいて第1の加熱要素が故障したかを判定する請求項9記載の基板支持アセンブリ。 - ヒータコントローラは、
第1の加熱要素の温度測定値と温度設定値の間の差を決定し、
差が閾値を超えているかどうかを決定し、
差が閾値を超えると決定したことに応答して、第1の加熱要素の設定を調整する請求項13記載の基板支持アセンブリ。 - 複数の加熱要素の1以上の加熱要素から分離された第1の金属層と、
第1の金属層を1以上の加熱要素に接続する第1の複数のビアであって、第1の金属層が1以上の加熱要素の共通接地として作用する第1の複数のビアと、
複数の温度センサの1以上の温度センサから分離された第2の金属層と、
第2の金属層を1以上の温度センサに接続する第2の複数のビアであって、第2の金属層が1以上の温度センサの共通接地として作用する第2の複数のビアを備える請求項9記載の基板支持アセンブリ。
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US201662286064P | 2016-01-22 | 2016-01-22 | |
US62/286,064 | 2016-01-22 | ||
US15/409,362 | 2017-01-18 | ||
US15/409,362 US10582570B2 (en) | 2016-01-22 | 2017-01-18 | Sensor system for multi-zone electrostatic chuck |
PCT/US2017/014233 WO2017127611A1 (en) | 2016-01-22 | 2017-01-20 | Sensor system for multi-zone electrostatic chuck |
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JP (2) | JP7253922B2 (ja) |
KR (1) | KR20180097789A (ja) |
CN (2) | CN108474694A (ja) |
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- 2017-01-20 CN CN201780007493.3A patent/CN108474694A/zh active Pending
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JP2023055790A (ja) | 2023-04-18 |
US20200163159A1 (en) | 2020-05-21 |
TWI771859B (zh) | 2022-07-21 |
KR20180097789A (ko) | 2018-08-31 |
JP7253922B2 (ja) | 2023-04-07 |
US10582570B2 (en) | 2020-03-03 |
TW201736812A (zh) | 2017-10-16 |
CN117198968A (zh) | 2023-12-08 |
US11265971B2 (en) | 2022-03-01 |
WO2017127611A1 (en) | 2017-07-27 |
TWI717453B (zh) | 2021-02-01 |
CN108474694A (zh) | 2018-08-31 |
TW202130980A (zh) | 2021-08-16 |
US20170215230A1 (en) | 2017-07-27 |
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