JP2019503082A - 横方向ハードマスク凹部縮小のためのハイブリッドカーボンハードマスク - Google Patents
横方向ハードマスク凹部縮小のためのハイブリッドカーボンハードマスク Download PDFInfo
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- JP2019503082A JP2019503082A JP2018537462A JP2018537462A JP2019503082A JP 2019503082 A JP2019503082 A JP 2019503082A JP 2018537462 A JP2018537462 A JP 2018537462A JP 2018537462 A JP2018537462 A JP 2018537462A JP 2019503082 A JP2019503082 A JP 2019503082A
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- Prior art keywords
- hard mask
- etching process
- silicon
- nitride
- material layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 14
- 229910052799 carbon Inorganic materials 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 82
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- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000059 patterning Methods 0.000 claims abstract description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 24
- 229910052796 boron Inorganic materials 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 6
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- 229910052582 BN Inorganic materials 0.000 description 1
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- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
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- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
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- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Images
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
[0002] 集積回路は、単一チップ上に数百万個ものトランジスタ、コンデンサ、及び抵抗器が搭載されうる複雑なデバイスへと進化を遂げている。チップ設計の進化には、より高速な回路及びより高い回路密度が継続的に必要とされる。より高い回路密度を有するより高速な回路に対する要求は、このような集積回路の製造に使用される材料についても同様の要求を課している。特に、集積回路構成要素の寸法がサブミクロン単位まで小さくなるにつれ、このような構成要素に対して適切な電気的性能を得るためには、低抵抗率導電性材料並びに低誘電率絶縁材料を使用することが必要となることが多い。
Claims (15)
- 基板上に配置された一又は複数の材料層の上に第1のハードマスクを堆積すること、
前記第1のハードマスクの上に第2のハードマスクを堆積すること、
前記第2のハードマスクをパターニングすること、
前記第1のハードマスク及び前記第2のハードマスクをエッチングする第1のエッチング処理を実施すること、
前記一又は複数の材料層、前記第1のハードマスク、及び前記第2のハードマスクの上に第3のハードマスクを共形に堆積すること、及び、
前記一又は複数の材料層をエッチングして、前記一又は複数の材料層にチャネルを形成する第2のエッチング処理を実施すること
を含む、基板処理方法。 - 前記一又は複数の材料層は、窒化ケイ素材料及び酸化ケイ素材料を含む、請求項1に記載の方法。
- 前記窒化ケイ素材料及び前記酸化ケイ素材料は、積み重ねられた層を形成するため、交互の層に堆積される、請求項1に記載の方法。
- 前記第1のハードマスクは炭素含有材料である、請求項1に記載の方法。
- 前記第1のハードマスクは1μmから2μmまでの厚さに堆積される、請求項4に記載の方法。
- 前記第2のハードマスクは誘電体材料である、請求項1に記載の方法。
- 前記誘電体材料はケイ素含有材料である、請求項6に記載の方法。
- 前記ケイ素含有材料は二酸化ケイ素材料、窒化ケイ素材料、酸窒化ケイ素材料、或いはこれらの組み合わせである、請求項7に記載の方法。
- 前記第2のハードマスクは50μmから200μmまでの厚さに堆積される、請求項6に記載の方法。
- 前記第3のハードマスクは5nmから15nmまでの厚さに共形に堆積される、請求項1に記載の方法。
- 前記第3のハードマスクは、25重量%を超えるホウ素と50重量%の炭素からなる、ホウ素がドープされた炭素質材料からなる、請求項1に記載の方法。
- 前記ホウ素がドープされた炭素質材料は、窒素をふくむ炭窒化ホウ素材料である、請求項11に記載の方法。
- 前記炭窒化ホウ素材料の少なくとも80%は、ホウ素、炭素及び窒素から形成される、請求項12に記載の方法。
- 基板上に配置された一又は複数の酸化物及び窒化物含有材料層の上に第1のハードマスクを堆積すること、
前記第1のハードマスクの上に第2のハードマスクを堆積すること、
前記第1のハードマスク及び前記第2のハードマスクをエッチングする第1のエッチング処理を実施すること、
前記一又は複数の酸化物及び窒化物含有材料層、前記第1のハードマスク、及び前記第2のハードマスクの上に炭窒化ホウ素ハードマスクを共形に堆積すること、及び、
前記一又は複数の酸化物及び窒化物含有材料層をエッチングして、前記一又は複数の酸化物及び窒化物含有材料層にチャネルを形成する第2のエッチング処理であって、CH4、N2、O2、及びフッ素リッチ前駆体からなる群から選択された前駆体を用いるプラズマベースのエッチング処理である第2のエッチング処理を実施すること、
を含む、基板処理方法。 - 基板上に配置された一又は複数の酸化物及び窒化物含有材料層の上に炭素質ハードマスクを堆積すること、
前記炭素質ハードマスクの上にケイ素含有誘電体ハードマスクを堆積すること、
前記炭素質ハードマスク及び前記ケイ素含有誘電体ハードマスクをエッチングする第1のエッチング処理を実施すること、
前記一又は複数の酸化物及び窒化物含有材料層、前記炭素質ハードマスク、及び前記ケイ素含有誘電体ハードマスクの上に炭窒化ホウ素ハードマスクを共形に堆積すること、及び、
前記一又は複数の酸化物及び窒化物含有材料層をエッチングして、前記一又は複数の酸化物及び窒化物含有材料層にチャネルを形成する第2のエッチング処理であって、CH4、N2、O2、及びフッ素リッチ前駆体からなる群から選択された前駆体を用いるプラズマベースのエッチング処理である第2のエッチング処理を実施すること、
を含む、基板処理方法。
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JP7266068B2 (ja) | 2023-04-27 |
TWI726034B (zh) | 2021-05-01 |
WO2017127233A1 (en) | 2017-07-27 |
TW201736947A (zh) | 2017-10-16 |
JP6907217B2 (ja) | 2021-07-21 |
US20180277370A1 (en) | 2018-09-27 |
CN116631865A (zh) | 2023-08-22 |
CN108475640B (zh) | 2023-06-06 |
CN108475640A (zh) | 2018-08-31 |
KR20180097763A (ko) | 2018-08-31 |
US10410864B2 (en) | 2019-09-10 |
US20170207088A1 (en) | 2017-07-20 |
US9991118B2 (en) | 2018-06-05 |
JP2021177557A (ja) | 2021-11-11 |
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