JP2021521326A - 高温アモルファスカーボン堆積の厚膜堆積中の自発的アークの解決 - Google Patents
高温アモルファスカーボン堆積の厚膜堆積中の自発的アークの解決 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title abstract description 16
- 229910003481 amorphous carbon Inorganic materials 0.000 title abstract description 4
- 230000002269 spontaneous effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
Description
Claims (15)
- リングであって、
本体を備えており、前記本体が、
上面;
前記上面に平行な底面;
前記上面を前記底面に接続する傾斜面であって、前記傾斜面と前記底面とが約20度から約80度の範囲の角度を形成する、傾斜面;
前記上面を前記底面に接続する外縁;及び
前記傾斜面と前記底面との接合部によって画成される、約12.08インチから約12.18インチの範囲の直径を有する内縁
を備えている、
リング。 - 前記リングがセラミック材料から製造される、請求項1に記載のリング。
- 前記角度が約40度から約70度の範囲である、請求項1に記載のリング。
- 前記角度が約55度から約65度の範囲である、請求項1に記載のリング。
- 基板上に層を形成するための処理チャンバであって、
チャンバ本体;
前記チャンバ本体上に配置された蓋;
前記チャンバ本体に配置された基板支持体;及び
前記基板支持体上に配置されたエッジリング
を備えており、前記エッジリングが、
本体を備えており、前記本体が、
外縁;及び
内縁
を備えており、前記内縁の直径が、前記基板の直径より約0.28インチから約0.38インチ大きい、
処理チャンバ。 - 前記内縁の直径が約12.08インチから約12.18インチの範囲である、請求項5に記載の処理チャンバ。
- 前記内縁の直径が前記基板の直径の約102.4パーセントから約103.2パーセントである、請求項5に記載の処理チャンバ。
- 前記エッジリングがセラミック材料から製造される、請求項5に記載の処理チャンバ。
- 前記エッジリングが、
上面;
前記上面に平行な底面;及び
前記上面を前記底面に接続する傾斜面
をさらに含む、請求項5に記載の処理チャンバ。 - 前記内縁が、前記傾斜面と前記底面との接合部によって画成される、請求項9に記載の処理チャンバ。
- 方法において、
エッジリングで取り囲まれた基板を処理チャンバ内に配置することであって、前記基板と前記エッジリングの内縁との距離が約0.14インチから約0.19インチの範囲である、配置すること;及び
前記基板上に、約2ミクロンを超える厚さを有する誘電体層を形成すること、
を含む、方法。 - 前記基板が層のスタックを含み、前記誘電体層が前記層のスタック上に形成される、請求項11に記載の方法。
- 前記層のスタックが複数の交互の酸化物層及び窒化物層を含む、請求項12に記載の方法。
- 前記誘電体層上にフォトレジストを形成し、パターン化することをさらに含む、請求項13に記載の方法。
- 前記層のスタックに1つ以上の開口部を形成することをさらに含む、請求項14に記載の方法。
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US201962795242P | 2019-01-22 | 2019-01-22 | |
US62/795,242 | 2019-01-22 | ||
PCT/US2019/026576 WO2019199822A2 (en) | 2018-04-10 | 2019-04-09 | Resolving spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition |
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JPWO2019199822A5 JPWO2019199822A5 (ja) | 2022-04-19 |
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US (1) | US20210017645A1 (ja) |
JP (1) | JP2021521326A (ja) |
KR (1) | KR20200130745A (ja) |
CN (1) | CN112041480A (ja) |
SG (1) | SG11202009444QA (ja) |
WO (1) | WO2019199822A2 (ja) |
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- 2019-04-09 US US17/040,788 patent/US20210017645A1/en not_active Abandoned
- 2019-04-09 CN CN201980028655.0A patent/CN112041480A/zh active Pending
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US20210017645A1 (en) | 2021-01-21 |
KR20200130745A (ko) | 2020-11-19 |
WO2019199822A3 (en) | 2020-10-22 |
CN112041480A (zh) | 2020-12-04 |
SG11202009444QA (en) | 2020-10-29 |
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