JP2019220435A5 - - Google Patents

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JP2019220435A5
JP2019220435A5 JP2018119084A JP2018119084A JP2019220435A5 JP 2019220435 A5 JP2019220435 A5 JP 2019220435A5 JP 2018119084 A JP2018119084 A JP 2018119084A JP 2018119084 A JP2018119084 A JP 2018119084A JP 2019220435 A5 JP2019220435 A5 JP 2019220435A5
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Japan
Prior art keywords
frequency power
signal
high frequency
pulsed
generate
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JP2018119084A
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English (en)
Japanese (ja)
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JP6842443B2 (ja
JP2019220435A (ja
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Priority claimed from JP2018119084A external-priority patent/JP6842443B2/ja
Priority to JP2018119084A priority Critical patent/JP6842443B2/ja
Priority to PCT/JP2019/022954 priority patent/WO2019244698A1/ja
Priority to KR1020207006605A priority patent/KR102723098B1/ko
Priority to US16/645,188 priority patent/US10978274B2/en
Priority to CN201980004388.3A priority patent/CN111052874B/zh
Priority to TW108120965A priority patent/TWI812738B/zh
Publication of JP2019220435A publication Critical patent/JP2019220435A/ja
Publication of JP2019220435A5 publication Critical patent/JP2019220435A5/ja
Publication of JP6842443B2 publication Critical patent/JP6842443B2/ja
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JP2018119084A 2018-06-22 2018-06-22 プラズマ処理装置及びプラズマを生成する方法 Active JP6842443B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018119084A JP6842443B2 (ja) 2018-06-22 2018-06-22 プラズマ処理装置及びプラズマを生成する方法
CN201980004388.3A CN111052874B (zh) 2018-06-22 2019-06-10 等离子体处理装置和生成等离子体的方法
KR1020207006605A KR102723098B1 (ko) 2018-06-22 2019-06-10 플라즈마 처리 장치 및 플라즈마를 생성하는 방법
US16/645,188 US10978274B2 (en) 2018-06-22 2019-06-10 Plasma processing apparatus and method for generating plasma
PCT/JP2019/022954 WO2019244698A1 (ja) 2018-06-22 2019-06-10 プラズマ処理装置及びプラズマを生成する方法
TW108120965A TWI812738B (zh) 2018-06-22 2019-06-18 電漿處理裝置及電漿產生方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018119084A JP6842443B2 (ja) 2018-06-22 2018-06-22 プラズマ処理装置及びプラズマを生成する方法

Publications (3)

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JP2019220435A JP2019220435A (ja) 2019-12-26
JP2019220435A5 true JP2019220435A5 (enExample) 2021-02-04
JP6842443B2 JP6842443B2 (ja) 2021-03-17

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JP2018119084A Active JP6842443B2 (ja) 2018-06-22 2018-06-22 プラズマ処理装置及びプラズマを生成する方法

Country Status (6)

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US (1) US10978274B2 (enExample)
JP (1) JP6842443B2 (enExample)
KR (1) KR102723098B1 (enExample)
CN (1) CN111052874B (enExample)
TW (1) TWI812738B (enExample)
WO (1) WO2019244698A1 (enExample)

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US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
KR20230073145A (ko) 2020-09-29 2023-05-25 램 리써치 코포레이션 Rf 생성기들의 동기화
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
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US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
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US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
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