JP2017228558A5 - - Google Patents

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Publication number
JP2017228558A5
JP2017228558A5 JP2016121596A JP2016121596A JP2017228558A5 JP 2017228558 A5 JP2017228558 A5 JP 2017228558A5 JP 2016121596 A JP2016121596 A JP 2016121596A JP 2016121596 A JP2016121596 A JP 2016121596A JP 2017228558 A5 JP2017228558 A5 JP 2017228558A5
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JP
Japan
Prior art keywords
waveform
electrode
frequency
unit
high frequency
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JP2016121596A
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English (en)
Japanese (ja)
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JP2017228558A (ja
JP6541623B2 (ja
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Priority to JP2016121596A priority Critical patent/JP6541623B2/ja
Priority claimed from JP2016121596A external-priority patent/JP6541623B2/ja
Priority to TW106118818A priority patent/TWI794176B/zh
Priority to KR1020170077136A priority patent/KR102358730B1/ko
Priority to US15/626,502 priority patent/US9934947B2/en
Publication of JP2017228558A publication Critical patent/JP2017228558A/ja
Publication of JP2017228558A5 publication Critical patent/JP2017228558A5/ja
Application granted granted Critical
Publication of JP6541623B2 publication Critical patent/JP6541623B2/ja
Expired - Fee Related legal-status Critical Current
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JP2016121596A 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法 Expired - Fee Related JP6541623B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016121596A JP6541623B2 (ja) 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法
TW106118818A TWI794176B (zh) 2016-06-20 2017-06-07 電漿處理裝置及波形修正方法
KR1020170077136A KR102358730B1 (ko) 2016-06-20 2017-06-19 플라즈마 처리 장치 및 파형 보정 방법
US15/626,502 US9934947B2 (en) 2016-06-20 2017-06-19 Plasma processing apparatus and waveform correction method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016121596A JP6541623B2 (ja) 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法

Publications (3)

Publication Number Publication Date
JP2017228558A JP2017228558A (ja) 2017-12-28
JP2017228558A5 true JP2017228558A5 (enExample) 2018-08-16
JP6541623B2 JP6541623B2 (ja) 2019-07-10

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JP2016121596A Expired - Fee Related JP6541623B2 (ja) 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法

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US (1) US9934947B2 (enExample)
JP (1) JP6541623B2 (enExample)
KR (1) KR102358730B1 (enExample)
TW (1) TWI794176B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7037964B2 (ja) * 2018-03-09 2022-03-17 東京エレクトロン株式会社 測定器、及びフォーカスリングを検査するためのシステムの動作方法
JP6846384B2 (ja) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法
US10916409B2 (en) * 2018-06-18 2021-02-09 Lam Research Corporation Active control of radial etch uniformity
JP6842443B2 (ja) * 2018-06-22 2021-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマを生成する方法
US12230475B2 (en) * 2018-08-14 2025-02-18 Tokyo Electron Limited Systems and methods of control for plasma processing
KR20250100790A (ko) * 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
US11721526B2 (en) * 2019-05-31 2023-08-08 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
KR102175086B1 (ko) * 2019-07-15 2020-11-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN113035677B (zh) * 2019-12-09 2023-01-24 中微半导体设备(上海)股份有限公司 等离子体处理设备以及等离子体处理方法
CN113272939B (zh) * 2019-12-17 2023-11-14 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
JP2021168231A (ja) * 2020-04-09 2021-10-21 東京計器株式会社 高周波生成装置
US11775199B2 (en) * 2021-01-20 2023-10-03 Micron Technology, Inc. Voltage resonance mitigation of memory dies
KR20240042091A (ko) * 2021-08-12 2024-04-01 램 리써치 코포레이션 웨이퍼 바이어싱을 위한 펄스의 왜곡
KR20240052537A (ko) * 2022-10-14 2024-04-23 삼성전자주식회사 플라즈마 제어 장치 및 이를 이용한 기판 처리 방법
JP2024062195A (ja) 2022-10-24 2024-05-09 東京エレクトロン株式会社 周波数可変電源及びプラズマ処理装置
CN117998716A (zh) * 2022-11-01 2024-05-07 中微半导体设备(上海)股份有限公司 一种电容耦合等离子处理器
US20250191884A1 (en) * 2023-12-11 2025-06-12 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma
US20260043884A1 (en) * 2024-08-06 2026-02-12 Mks Inc. High Accuracy Detector For Non-Sinusoidal Generator

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
JP3808973B2 (ja) * 1996-05-15 2006-08-16 株式会社ダイヘン プラズマ処理装置
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
EP0840350A2 (en) 1996-11-04 1998-05-06 Applied Materials, Inc. Plasma apparatus and process with filtering of plasma sheath-generated harmonics
US6323648B1 (en) * 1997-11-26 2001-11-27 Medrad, Inc. Peripheral vascular array
JP4633881B2 (ja) * 2000-02-21 2011-02-16 株式会社日立製作所 プラズマ処理装置及びそれを用いた処理方法
KR20020021808A (ko) * 2000-06-12 2002-03-22 이에츠구 히사시 면역분석법 및 면역분석장치
TW200420201A (en) * 2002-12-16 2004-10-01 Japan Science & Tech Agency Plasma generation device, plasma control method and substrate manufacturing method
US8835869B2 (en) * 2003-02-04 2014-09-16 Veeco Instruments, Inc. Ion sources and methods for generating an ion beam with controllable ion current density distribution
JP4408707B2 (ja) 2004-01-13 2010-02-03 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4920991B2 (ja) * 2006-02-22 2012-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5376816B2 (ja) * 2008-03-14 2013-12-25 東京エレクトロン株式会社 マイクロ波導入機構、マイクロ波プラズマ源およびマイクロ波プラズマ処理装置
JP4978566B2 (ja) * 2008-06-10 2012-07-18 パナソニック株式会社 大気圧プラズマ発生方法及び装置
US9111795B2 (en) * 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
JP2014049362A (ja) * 2012-09-03 2014-03-17 Tokyo Electron Ltd プラズマ発生装置および基板処理装置
US9924883B2 (en) * 2013-06-28 2018-03-27 University of Pittsburgh—of the Commonwealth System of Higher Education Biomimetic coating for neural implants
JP6140093B2 (ja) * 2014-03-18 2017-05-31 株式会社東芝 キャッシュメモリ、誤り訂正回路およびプロセッサシステム
US9798256B2 (en) * 2015-06-30 2017-10-24 Canon Kabushiki Kaisha Method of producing toner

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