JP2017228558A5 - - Google Patents

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Publication number
JP2017228558A5
JP2017228558A5 JP2016121596A JP2016121596A JP2017228558A5 JP 2017228558 A5 JP2017228558 A5 JP 2017228558A5 JP 2016121596 A JP2016121596 A JP 2016121596A JP 2016121596 A JP2016121596 A JP 2016121596A JP 2017228558 A5 JP2017228558 A5 JP 2017228558A5
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JP
Japan
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waveform
electrode
frequency
unit
high frequency
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JP2016121596A
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English (en)
Japanese (ja)
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JP2017228558A (ja
JP6541623B2 (ja
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Priority to JP2016121596A priority Critical patent/JP6541623B2/ja
Priority claimed from JP2016121596A external-priority patent/JP6541623B2/ja
Priority to TW106118818A priority patent/TWI794176B/zh
Priority to KR1020170077136A priority patent/KR102358730B1/ko
Priority to US15/626,502 priority patent/US9934947B2/en
Publication of JP2017228558A publication Critical patent/JP2017228558A/ja
Publication of JP2017228558A5 publication Critical patent/JP2017228558A5/ja
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Publication of JP6541623B2 publication Critical patent/JP6541623B2/ja
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JP2016121596A 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法 Active JP6541623B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016121596A JP6541623B2 (ja) 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法
TW106118818A TWI794176B (zh) 2016-06-20 2017-06-07 電漿處理裝置及波形修正方法
KR1020170077136A KR102358730B1 (ko) 2016-06-20 2017-06-19 플라즈마 처리 장치 및 파형 보정 방법
US15/626,502 US9934947B2 (en) 2016-06-20 2017-06-19 Plasma processing apparatus and waveform correction method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016121596A JP6541623B2 (ja) 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法

Publications (3)

Publication Number Publication Date
JP2017228558A JP2017228558A (ja) 2017-12-28
JP2017228558A5 true JP2017228558A5 (enExample) 2018-08-16
JP6541623B2 JP6541623B2 (ja) 2019-07-10

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JP2016121596A Active JP6541623B2 (ja) 2016-06-20 2016-06-20 プラズマ処理装置、及び波形補正方法

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US (1) US9934947B2 (enExample)
JP (1) JP6541623B2 (enExample)
KR (1) KR102358730B1 (enExample)
TW (1) TWI794176B (enExample)

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JP7037964B2 (ja) * 2018-03-09 2022-03-17 東京エレクトロン株式会社 測定器、及びフォーカスリングを検査するためのシステムの動作方法
JP6846384B2 (ja) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法
US10916409B2 (en) * 2018-06-18 2021-02-09 Lam Research Corporation Active control of radial etch uniformity
JP6842443B2 (ja) * 2018-06-22 2021-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマを生成する方法
US12230475B2 (en) 2018-08-14 2025-02-18 Tokyo Electron Limited Systems and methods of control for plasma processing
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
US11721526B2 (en) * 2019-05-31 2023-08-08 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
KR102175086B1 (ko) * 2019-07-15 2020-11-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN113035677B (zh) * 2019-12-09 2023-01-24 中微半导体设备(上海)股份有限公司 等离子体处理设备以及等离子体处理方法
CN113272939B (zh) * 2019-12-17 2023-11-14 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
JP2021168231A (ja) * 2020-04-09 2021-10-21 東京計器株式会社 高周波生成装置
US11775199B2 (en) * 2021-01-20 2023-10-03 Micron Technology, Inc. Voltage resonance mitigation of memory dies
CN117836896A (zh) 2021-08-12 2024-04-05 朗姆研究公司 针对晶片偏置的脉冲畸变
JP2024062195A (ja) 2022-10-24 2024-05-09 東京エレクトロン株式会社 周波数可変電源及びプラズマ処理装置
US20250191884A1 (en) * 2023-12-11 2025-06-12 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma

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US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
JP3808973B2 (ja) * 1996-05-15 2006-08-16 株式会社ダイヘン プラズマ処理装置
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
KR100525961B1 (ko) 1996-11-04 2005-12-21 어플라이드 머티어리얼스, 인코포레이티드 플라즈마시스에서발생하는고주파를필터링하는플라즈마처리장치및방법
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