JP6842443B2 - プラズマ処理装置及びプラズマを生成する方法 - Google Patents

プラズマ処理装置及びプラズマを生成する方法 Download PDF

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Publication number
JP6842443B2
JP6842443B2 JP2018119084A JP2018119084A JP6842443B2 JP 6842443 B2 JP6842443 B2 JP 6842443B2 JP 2018119084 A JP2018119084 A JP 2018119084A JP 2018119084 A JP2018119084 A JP 2018119084A JP 6842443 B2 JP6842443 B2 JP 6842443B2
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frequency power
signal
pulsed
high frequency
period
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Japanese (ja)
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JP2019220435A (ja
JP2019220435A5 (enExample
Inventor
紳治 久保田
紳治 久保田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018119084A priority Critical patent/JP6842443B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to PCT/JP2019/022954 priority patent/WO2019244698A1/ja
Priority to CN201980004388.3A priority patent/CN111052874B/zh
Priority to KR1020207006605A priority patent/KR102723098B1/ko
Priority to US16/645,188 priority patent/US10978274B2/en
Priority to TW108120965A priority patent/TWI812738B/zh
Publication of JP2019220435A publication Critical patent/JP2019220435A/ja
Publication of JP2019220435A5 publication Critical patent/JP2019220435A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2018119084A 2018-06-22 2018-06-22 プラズマ処理装置及びプラズマを生成する方法 Active JP6842443B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018119084A JP6842443B2 (ja) 2018-06-22 2018-06-22 プラズマ処理装置及びプラズマを生成する方法
CN201980004388.3A CN111052874B (zh) 2018-06-22 2019-06-10 等离子体处理装置和生成等离子体的方法
KR1020207006605A KR102723098B1 (ko) 2018-06-22 2019-06-10 플라즈마 처리 장치 및 플라즈마를 생성하는 방법
US16/645,188 US10978274B2 (en) 2018-06-22 2019-06-10 Plasma processing apparatus and method for generating plasma
PCT/JP2019/022954 WO2019244698A1 (ja) 2018-06-22 2019-06-10 プラズマ処理装置及びプラズマを生成する方法
TW108120965A TWI812738B (zh) 2018-06-22 2019-06-18 電漿處理裝置及電漿產生方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018119084A JP6842443B2 (ja) 2018-06-22 2018-06-22 プラズマ処理装置及びプラズマを生成する方法

Publications (3)

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JP2019220435A JP2019220435A (ja) 2019-12-26
JP2019220435A5 JP2019220435A5 (enExample) 2021-02-04
JP6842443B2 true JP6842443B2 (ja) 2021-03-17

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US (1) US10978274B2 (enExample)
JP (1) JP6842443B2 (enExample)
KR (1) KR102723098B1 (enExample)
CN (1) CN111052874B (enExample)
TW (1) TWI812738B (enExample)
WO (1) WO2019244698A1 (enExample)

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Also Published As

Publication number Publication date
US10978274B2 (en) 2021-04-13
CN111052874A (zh) 2020-04-21
TW202002727A (zh) 2020-01-01
US20200286714A1 (en) 2020-09-10
KR102723098B1 (ko) 2024-10-28
TWI812738B (zh) 2023-08-21
JP2019220435A (ja) 2019-12-26
CN111052874B (zh) 2023-02-28
KR20210021441A (ko) 2021-02-26
WO2019244698A1 (ja) 2019-12-26

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