JP2019140310A5 - - Google Patents

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Publication number
JP2019140310A5
JP2019140310A5 JP2018024047A JP2018024047A JP2019140310A5 JP 2019140310 A5 JP2019140310 A5 JP 2019140310A5 JP 2018024047 A JP2018024047 A JP 2018024047A JP 2018024047 A JP2018024047 A JP 2018024047A JP 2019140310 A5 JP2019140310 A5 JP 2019140310A5
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JP
Japan
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region
electrode
conductive
semiconductor
gate electrode
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JP2018024047A
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English (en)
Japanese (ja)
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JP2019140310A (ja
JP6926012B2 (ja
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Priority to JP2018024047A priority Critical patent/JP6926012B2/ja
Priority claimed from JP2018024047A external-priority patent/JP6926012B2/ja
Priority to US16/033,371 priority patent/US10847648B2/en
Priority to CN201810762478.6A priority patent/CN110164971B/zh
Publication of JP2019140310A publication Critical patent/JP2019140310A/ja
Publication of JP2019140310A5 publication Critical patent/JP2019140310A5/ja
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Publication of JP6926012B2 publication Critical patent/JP6926012B2/ja
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JP2018024047A 2018-02-14 2018-02-14 半導体装置 Active JP6926012B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018024047A JP6926012B2 (ja) 2018-02-14 2018-02-14 半導体装置
US16/033,371 US10847648B2 (en) 2018-02-14 2018-07-12 Semiconductor device
CN201810762478.6A CN110164971B (zh) 2018-02-14 2018-07-12 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018024047A JP6926012B2 (ja) 2018-02-14 2018-02-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2019140310A JP2019140310A (ja) 2019-08-22
JP2019140310A5 true JP2019140310A5 (https=) 2020-03-26
JP6926012B2 JP6926012B2 (ja) 2021-08-25

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ID=67540256

Family Applications (1)

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JP2018024047A Active JP6926012B2 (ja) 2018-02-14 2018-02-14 半導体装置

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US (1) US10847648B2 (https=)
JP (1) JP6926012B2 (https=)
CN (1) CN110164971B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6864640B2 (ja) * 2018-03-19 2021-04-28 株式会社東芝 半導体装置及びその制御方法
JP7164497B2 (ja) * 2019-08-23 2022-11-01 株式会社東芝 半導体装置
CN111739936B (zh) * 2020-08-07 2020-11-27 中芯集成电路制造(绍兴)有限公司 一种半导体器件及其形成方法
JP7447769B2 (ja) * 2020-11-13 2024-03-12 三菱電機株式会社 半導体素子、半導体装置
JP7486407B2 (ja) * 2020-11-27 2024-05-17 三菱電機株式会社 半導体装置および半導体装置の製造方法
DE112022001247T5 (de) * 2021-03-26 2023-12-14 Rohm Co., Ltd. Halbleiterbauteil
JP7728216B6 (ja) * 2022-03-23 2025-09-19 株式会社東芝 半導体装置
JP2025041261A (ja) * 2023-09-13 2025-03-26 三菱電機株式会社 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4830360B2 (ja) 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
JP2010010263A (ja) 2008-06-25 2010-01-14 Panasonic Corp 縦型半導体装置
JP5422930B2 (ja) 2008-06-30 2014-02-19 株式会社デンソー 半導体装置
US8022470B2 (en) * 2008-09-04 2011-09-20 Infineon Technologies Austria Ag Semiconductor device with a trench gate structure and method for the production thereof
JP5488691B2 (ja) * 2010-03-09 2014-05-14 富士電機株式会社 半導体装置
JP5287835B2 (ja) * 2010-04-22 2013-09-11 株式会社デンソー 半導体装置
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP6392133B2 (ja) * 2015-01-28 2018-09-19 株式会社東芝 半導体装置
JP6334438B2 (ja) * 2015-03-10 2018-05-30 株式会社東芝 半導体装置
JP6445952B2 (ja) * 2015-10-19 2018-12-26 株式会社東芝 半導体装置
US9530882B1 (en) * 2015-11-17 2016-12-27 Force Mos Technology Co., Ltd Trench MOSFET with shielded gate and diffused drift region
US20170317207A1 (en) * 2016-04-29 2017-11-02 Force Mos Technology Co., Ltd. Trench mosfet structure and layout with separated shielded gate
JP6677613B2 (ja) 2016-09-15 2020-04-08 株式会社東芝 半導体装置

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