JP2019140235A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019140235A JP2019140235A JP2018021979A JP2018021979A JP2019140235A JP 2019140235 A JP2019140235 A JP 2019140235A JP 2018021979 A JP2018021979 A JP 2018021979A JP 2018021979 A JP2018021979 A JP 2018021979A JP 2019140235 A JP2019140235 A JP 2019140235A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 230000002457 bidirectional effect Effects 0.000 claims abstract description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 93
- 229920005591 polysilicon Polymers 0.000 claims description 93
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 228
- 239000011229 interlayer Substances 0.000 description 35
- 239000012535 impurity Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
Description
102、202 ドリフト領域
103、203 ベース領域
104 トレンチ
105、205、305 ゲート絶縁膜
106、206、306 ゲート電極
107、207、322、422 P型ポリシリコン層
108、208、321、323、421、423 N型ポリシリコン層
109、209、309、409 双方向ダイオード
110、210 ソース領域
111、211 ベースコンタクト領域
112、212、312 ソースメタル層
113、116、216、313、316、413、424 層間絶縁膜
114、214、314、414 ゲートメタル層
115 絶縁膜
117 ドレイン電極
118 フィールド絶縁膜
120、220 半導体基板
Claims (9)
- 半導体基板と、
前記半導体基板内に設けられた第1導電型のドレイン領域及びソース領域と、
前記ドレイン領域と前記ソース領域との間に設けられた第2導電型のベース領域と、
前記ベース領域内に設けられた前記ベース領域よりも高濃度の第2導電型のベースコンタクト領域と、
前記ベース領域にチャネルが形成されるように、ゲート絶縁膜を介して前記ベース領域と接して設けられたゲート電極と、
前記半導体基板に垂直な方向に、前記ゲート電極と重なるように設けられ、一端が前記ゲート電極と電気的に接続され、他端が前記ソース領域と電気的に接続された双方向ダイオードと、
前記ソース領域、前記ベースコンタクト領域、及び前記双方向ダイオードの他端と電気的に接続されたソースメタル層と、
前記ゲート電極と電気的に接続され、前記半導体基板上の少なくとも一部の領域において、前記半導体基板に垂直な方向に、少なくとも一部が前記ソースメタル層と重なるように設けられたゲートメタル層とを備えることを特徴とする半導体装置。 - 前記ゲート電極は、第1導電型のポリシリコン層からなり、
前記双方向ダイオードは、前記ゲート電極と、前記ゲート電極上に設けられた第2導電型の第2のポリシリコン層と、前記第2のポリシリコン層上に設けられた第1導電型の第3のポリシリコン層とを含んで構成され、
前記ゲート電極、前記第2のポリシリコン層、及び前記第3のポリシリコン層は、前記半導体基板に垂直な方向に、この順に配置されていることを特徴とする請求項1に記載の半導体装置。 - 前記ドレイン領域は、前記半導体基板の裏面から所定の厚さを有して前記半導体基板内に設けられており、
前記半導体基板の表面から前記ドレイン領域の上面に達するトレンチをさらに備え、
前記ゲート絶縁膜は、前記トレンチの内側の底面及び側面を覆っており、
前記ゲート電極は、前記ゲート絶縁膜を介して前記トレンチ内に埋め込まれていることを特徴とする請求項2に記載の半導体装置。 - 前記第2のポリシリコン層は、前記ゲート絶縁膜を介して前記トレンチ内に埋め込まれていることを特徴とする請求項3に記載の半導体装置。
- 前記第3のポリシリコン層は、前記ゲート絶縁膜を介して前記トレンチ内に埋め込まれていることを特徴とする請求項4に記載の半導体装置。
- 前記双方向ダイオードは、前記ゲート絶縁膜を介して前記半導体基板上に設けられていることを特徴とする請求項2に記載の半導体装置。
- 前記双方向ダイオードは、一端が前記ゲートメタル層に接続され、他端が前記ソースメタル層に接続されていることを特徴とする請求項1に記載の半導体装置。
- 前記双方向ダイオードは、前記半導体基板上の前記少なくとも一部の領域における前記ソースメタル層上において、第1導電型の第1のポリシリコン層と、前記第1のポリシリコン層上に設けられた第2導電型の第2のポリシリコン層と、前記第2のポリシリコン層上に設けられた第1導電型の第3のポリシリコン層とを含んで構成され、
前記第1のポリシリコン層、前記第2のポリシリコン層、及び前記第3のポリシリコン層は、前記半導体基板に垂直な方向に、この順に配置されていることを特徴とする請求項7に記載の半導体装置。 - 前記双方向ダイオードは、前記半導体基板上の前記少なくとも一部の領域における前記ソースメタル層上において、第1導電型の第1のポリシリコン層と、前記第1のポリシリコン層に隣接して設けられた第2導電型の第2のポリシリコン層と、前記第2のポリシリコン層に隣接して設けられた第1導電型の第3のポリシリコン層とを含んで構成され、
前記第1のポリシリコン層、前記第2のポリシリコン層、及び前記第3のポリシリコン層は、前記半導体基板に平行な方向に、この順に配置されていることを特徴とする請求項7に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018021979A JP6998788B2 (ja) | 2018-02-09 | 2018-02-09 | 半導体装置 |
TW107145980A TW201935568A (zh) | 2018-02-09 | 2018-12-19 | 半導體裝置 |
KR1020180170618A KR20190096794A (ko) | 2018-02-09 | 2018-12-27 | 반도체 장치 |
CN201910011338.XA CN110137256A (zh) | 2018-02-09 | 2019-01-07 | 半导体装置 |
US16/241,259 US10797043B2 (en) | 2018-02-09 | 2019-01-07 | Semiconductor device with bidirectional diode |
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JP2018021979A JP6998788B2 (ja) | 2018-02-09 | 2018-02-09 | 半導体装置 |
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JP2019140235A true JP2019140235A (ja) | 2019-08-22 |
JP6998788B2 JP6998788B2 (ja) | 2022-01-18 |
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JP (1) | JP6998788B2 (ja) |
KR (1) | KR20190096794A (ja) |
CN (1) | CN110137256A (ja) |
TW (1) | TW201935568A (ja) |
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JP2010177454A (ja) * | 2009-01-29 | 2010-08-12 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
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JPH11220127A (ja) * | 1998-02-03 | 1999-08-10 | Sharp Corp | 絶縁ゲート型半導体装置及びその製造方法 |
JP2001326354A (ja) * | 2000-03-06 | 2001-11-22 | Rohm Co Ltd | 半導体装置 |
US20100224931A1 (en) * | 2008-02-23 | 2010-09-09 | Force Mos Technology Co. Ltd. | Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortage |
JP2009218307A (ja) * | 2008-03-10 | 2009-09-24 | Fuji Electric Device Technology Co Ltd | Mos型半導体装置 |
JP2010177454A (ja) * | 2009-01-29 | 2010-08-12 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2012174726A (ja) * | 2011-02-17 | 2012-09-10 | Semiconductor Components Industries Llc | 絶縁ゲート型半導体装置 |
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CN110137256A (zh) | 2019-08-16 |
US10797043B2 (en) | 2020-10-06 |
US20190252542A1 (en) | 2019-08-15 |
JP6998788B2 (ja) | 2022-01-18 |
TW201935568A (zh) | 2019-09-01 |
KR20190096794A (ko) | 2019-08-20 |
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