JP2012174726A - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- JP2012174726A JP2012174726A JP2011032342A JP2011032342A JP2012174726A JP 2012174726 A JP2012174726 A JP 2012174726A JP 2011032342 A JP2011032342 A JP 2011032342A JP 2011032342 A JP2011032342 A JP 2011032342A JP 2012174726 A JP2012174726 A JP 2012174726A
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Abstract
【解決手段】 ゲート引き出し配線と、ゲート引き出し配線と保護ダイオードとを接続する導電体とを、チップの同一辺に沿って曲折しない一直線状に配置する。又これらの上に重畳して延在し、これらと保護ダイオードを接続する第1ゲート電極層の曲折部を1以下とする。更に保護ダイオードを導電体またはゲート引き出し配線と隣接して配置し、保護ダイオードの一部をゲートパッド部に近接して配置する。
【選択図】 図1
Description
第1に、ゲート引き出し配線の引き出し部の配置面積を低減することによって、非動作領域を低減できるので、同じチップサイズの従来構造と比較して、素子領域の面積を拡大でき、オン抵抗を低減できる。また素子領域の面積を従来構造と同等に維持する場合には、チップサイズを縮小できる。
2 n−型半導体層
7 ゲート電極
8 ゲート引き出し配線
81 引き出し部
82 連結部
9 導電体
17 第1ゲート電極
18 第1ソース電極
27 第2ゲート電極
28 第2ソース電極
281 ゲートパッド部
282 配線部
283 接続部
Claims (7)
- 一導電型半導体層と、
前記一導電型半導体層の表面に設けられ、絶縁ゲート型半導体素子のトランジスタセルが配置される素子領域と、
該素子領域上に設けられ前記トランジスタセルのゲート電極と接続するゲートパッド部と、
前記トランジスタセルのソース電極と前記ゲート電極間に接続される保護ダイオードと、
前記一導電型半導体層の周辺部に配置され、前記ゲート電極を前記一導電型半導体層上に引き出して前記ゲートパッド部に接続するゲート引き出し配線と、
該ゲート引き出し配線と前記保護ダイオードとに接続する導電体と、
を具備し、
前記ゲート引き出し配線および前記導電体は曲折せず、前記一導電型半導体層の一の辺に沿って一直線状に設けられることを特徴とする絶縁ゲート型半導体装置。 - 前記保護ダイオード、前記ゲート引き出し配線および前記導電体は隣接して配置されることを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
- 前記保護ダイオードは前記一の辺に沿って配置されることを特徴とする請求項1または請求項2に記載の絶縁ゲート型半導体装置。
- 前記保護ダイオードは前記ゲートパッド部の直近に配置されることを特徴とする請求項1から請求項3のいずれかに記載の絶縁ゲート型半導体装置。
- 前記ゲート引き出し配線、前記導電体上に延在し前記保護ダイオードの一端に接続する第1ゲート電極層が設けられ、該第1ゲート電極層の曲折部は1以下であることを特徴とする請求項1から請求項4のいずれかに記載の絶縁ゲート型半導体装置。
- 前記保護ダイオード上で前記第1ゲート電極層と接続する第2ゲート電極層が設けられ、前記ゲートパッド部は前記第2ゲート電極層の一部であることを特徴とする請求項1から請求項5のいずれかに記載の絶縁ゲート型半導体装置。
- 前記一導電型半導体層は、短辺と長辺を有する矩形状であり、前記ゲート電極は前記長辺に沿ってストライプ状に延在し、前記ゲート引き出し配線は前記短辺に沿って配置されることを特徴とする請求項1から請求項6のいずれかに記載の絶縁ゲート型半導体装置。
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JP2011032342A JP6000513B2 (ja) | 2011-02-17 | 2011-02-17 | 絶縁ゲート型半導体装置 |
CN201280008087.6A CN103370792B (zh) | 2011-02-17 | 2012-02-09 | 绝缘栅极型半导体装置 |
US13/982,668 US8981471B2 (en) | 2011-02-17 | 2012-02-09 | Insulated gate semiconductor device |
PCT/JP2012/000875 WO2012111285A1 (ja) | 2011-02-17 | 2012-02-09 | 絶縁ゲート型半導体装置 |
US14/618,571 US10121887B2 (en) | 2011-02-17 | 2015-02-10 | Insulated gate semiconductor device and method |
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US9607984B2 (en) | 2014-08-01 | 2017-03-28 | Semiconductor Components Industries, Llc | Common drain semiconductor device structure and method |
JP2019140235A (ja) * | 2018-02-09 | 2019-08-22 | エイブリック株式会社 | 半導体装置 |
KR20210147069A (ko) * | 2019-04-11 | 2021-12-06 | 크리, 인코포레이티드 | 증가된 활성 영역을 갖는 트랜지스터 반도체 다이 |
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JP6000513B2 (ja) * | 2011-02-17 | 2016-09-28 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
US9076805B2 (en) * | 2012-07-14 | 2015-07-07 | Infineon Technologies Ag | Current sense transistor with embedding of sense transistor cells |
KR102369553B1 (ko) * | 2015-12-31 | 2022-03-02 | 매그나칩 반도체 유한회사 | 저전압 트렌치 반도체 소자 |
US10522674B2 (en) | 2016-05-18 | 2019-12-31 | Rohm Co., Ltd. | Semiconductor with unified transistor structure and voltage regulator diode |
JP6942511B2 (ja) * | 2016-05-18 | 2021-09-29 | ローム株式会社 | 半導体装置 |
WO2018198990A1 (ja) * | 2017-04-24 | 2018-11-01 | ローム株式会社 | 電子部品および半導体装置 |
CN109994445B (zh) * | 2017-12-29 | 2023-08-22 | 三垦电气株式会社 | 半导体元件和半导体装置 |
JP7454454B2 (ja) | 2020-06-18 | 2024-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
WO2023064232A1 (en) * | 2021-10-15 | 2023-04-20 | Wolfspeed, Inc. | Power semiconductor devices including multiple gate bond pads |
DE102022210413A1 (de) | 2022-09-30 | 2024-04-04 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zu dessen herstellung |
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- 2012-02-09 US US13/982,668 patent/US8981471B2/en active Active
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US9607984B2 (en) | 2014-08-01 | 2017-03-28 | Semiconductor Components Industries, Llc | Common drain semiconductor device structure and method |
JP2019140235A (ja) * | 2018-02-09 | 2019-08-22 | エイブリック株式会社 | 半導体装置 |
JP6998788B2 (ja) | 2018-02-09 | 2022-01-18 | エイブリック株式会社 | 半導体装置 |
KR20210147069A (ko) * | 2019-04-11 | 2021-12-06 | 크리, 인코포레이티드 | 증가된 활성 영역을 갖는 트랜지스터 반도체 다이 |
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US20150171071A1 (en) | 2015-06-18 |
US10121887B2 (en) | 2018-11-06 |
CN103370792A (zh) | 2013-10-23 |
US20140001539A1 (en) | 2014-01-02 |
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JP6000513B2 (ja) | 2016-09-28 |
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