JP2019131441A - 結晶成長方法および半導体素子の製造方法 - Google Patents
結晶成長方法および半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000002109 crystal growth method Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000002344 surface layer Substances 0.000 claims abstract description 31
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 238000000638 solvent extraction Methods 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
Description
図2は、本実施形態の結晶成長方法を示す断面図である。まず、表面層を有する基板10を準備する。基板10は、たとえば、窒化物半導体などであればよい。また、窒化物半導体中に不純物がドーピングされたn型基板またはp型基板であってもよい。たとえば、基板の欠陥密度は、1×105/cm3以下のものを使用する。
次に上述の準備工程で準備したGaN基板である基板10上にマスクパターンを形成するマスク形成工程を行う。まず基板10上にマスクの材料となるSiO2をPCVD(Plasma Chemical Vapor Deposition)法などによって、表面層10a上に所定の厚さのマスク層であるSiO2層を積層する。続いて、フォトグラフィー法とHF(フッ酸)系ウェットエッチングまたはドライエッチングによって、SiO2層をパターニングして、図2および図3に示されるマスクパターン11を形成する。マスクパターン11は、帯状体11aを所定の間隔で複数本平行に並べたストライプ状である。
つづいて、図5、6に示されるように、成長領域10a1,10a2,10a3上に半導体結晶の結晶成長層である半導体層13を気相成長(エピタキシャル成長)させる結晶成長工程を行う。本開示の半導体層13は、窒化物半導体であり、より具体的には、AlGaN層である。
W/2−(D−t)×n>t/tanα(単位はμm)・・・・・(1)
の関係を満たせば、隣の成長領域に形成した結晶成長層と重なり合うことがない。たとえば、αが90度の場合、D=2μm、t=0.5μm、n=1の場合には帯状体11aの幅Wは、3μm以上であればよく、D=2μm、t=1.0μm、n=4の場合には帯状体11aの幅Wは、8μm以上であればよく、また、D=2μm、t=0.2μm、n=4であれば、帯状体11aの幅Wは、14.4μm以上であればよい。
結晶成長工程S3を終了後、図10に示されるように、成長した半導体層13を実質的に侵さないエッチャントを用いてマスク材料をエッチング除去する。SiO2マスクの場合、HF系ウェットエッチングを行う。このとき、マスクパターン11は、基板上方からの平面視において露出しているので、このマスク除去工程を速やかに行うことが可能となる。その結果、たとえば、開口2μm以上、深さ2μ以上の溝構造が形成される。
その後、図11に示されるように半導体層13上に、AlGaN層などのデバイス製造に必要な半導体層14をエピタキシャル成長によって順次積層して半導体素子15を基板10上に複数個製造する。
図12は、本実施形態の半導体素子の製造方法の別の工程図である。準備工程S1、基板上にマスクパターンを形成するマスク形成工程S2、および基板上に窒化物半導体を成長させる結晶成長工程S3からなる上述の結晶成長方法によって半導体層13を作成した後、半導体層13上にさらに半導体層を形成して半導体素子を形成する。その後半導体層形成工程S6を行って、半導体素子を作成する。前述の半導体素子の製造方法の工程図に比べて、マスクパターンをエッチングによって取り除くマスク除去工程S4が省略されている。
10a 表面層
10a1,10a2,10a3 成長領域
11 マスクパターン
11a 帯状体
12a,12b 側面
12c 底面
12d 上面
13,13a1,13a2,13a3 半導体層
14 半導体層
15 半導体素子
Claims (6)
- 表面層を有する基板を準備する準備工程と、
前記表面層上に、複数の帯状体からなるマスクパターンを形成し、前記表面層を前記複数の帯状体で区画することによって、前記表面層の一部を露出させるマスク形成工程と、
露出した前記表面層の一部を複数の成長領域とし、前記複数の成長領域上に、気相成長によって、前記基板と異なる格子定数を有する半導体結晶を成長させて結晶成長層を形成する結晶成長工程と、を含み、
前記複数の帯状体のそれぞれは、前記表面層から離れるにつれて幅が減少するように傾斜した側面を有する結晶成長方法。 - 前記帯状体の短手方向の断面は、台形状または三角形状である請求項1に記載の結晶成長方法。
- 前記マスクパターンは、ストライプ状、または格子状である請求項1または2に記載の結晶成長方法。
- 前記結晶成長工程は、前記帯状体を介して隣接する前記複数の成長領域のうち、一方の成長領域上に成長した結晶成長層と、他方の成長領域上に成長した他方の結晶成長層とが離れた状態で結晶成長を停止させる請求項1〜3のいずれか1つに記載の結晶成長方法。
- 前記結晶成長工程後に、前記マスクパターンをエッチングによって除去するマスク除去工程をさらに含む請求項4に記載の結晶成長方法。
- 請求項1〜5のいずれか1つに記載の結晶成長方法によって形成された前記結晶成長層を用いて半導体素子を形成する半導体素子の製造方法。
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WO2021131808A1 (ja) * | 2019-12-26 | 2021-07-01 | 京セラ株式会社 | 半導体素子の製造方法及び半導体装置 |
WO2021246527A1 (ja) * | 2020-06-05 | 2021-12-09 | 株式会社Flosfia | 半導体装置の製造方法 |
US11880071B2 (en) | 2021-08-23 | 2024-01-23 | Corning Research & Development Corporation | Optical assembly for interfacing waveguide arrays, and associated methods |
US11914193B2 (en) | 2021-06-22 | 2024-02-27 | Corning Research & Development Corporation | Optical assembly for coupling with two-dimensionally arrayed waveguides and associated methods |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261032A (ja) * | 2000-06-19 | 2002-09-13 | Nichia Chem Ind Ltd | 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子 |
JP2003037066A (ja) * | 2001-05-17 | 2003-02-07 | Nichia Chem Ind Ltd | 窒化物半導体基板、及びその成長方法 |
JP2006315895A (ja) * | 2005-05-11 | 2006-11-24 | Furukawa Co Ltd | Iii族窒化物半導体層の形成方法、iii族窒化物半導体基板の製造方法およびiii族窒化物半導体基板 |
JP2007116097A (ja) * | 2005-09-22 | 2007-05-10 | Sony Corp | 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに窒化物系iii−v族化合物半導体の成長方法ならびに窒化物系iii−v族化合物半導体成長用基板ならびに光源セルユニットならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法 |
JP2011035338A (ja) * | 2009-08-06 | 2011-02-17 | Hitachi Ltd | 半導体受光素子及びその製造方法 |
US20120097975A1 (en) * | 2010-10-26 | 2012-04-26 | Samsung Electronics Co., Ltd. | Nitride-Based Semiconductor Substrates Having Hollow Member Pattern And Methods Of Fabricating The Same |
JP2015097261A (ja) * | 2013-10-11 | 2015-05-21 | パナソニックIpマネジメント株式会社 | 窒化物半導体積層構造、半導体発光素子および窒化物半導体積層構造を製造する方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW427039B (en) * | 1997-06-16 | 2001-03-21 | Matsushita Electric Ind Co Ltd | Manufacturing method for semiconductor, manufacturing method for semiconductor device, manufacturing method for semiconductor substrate |
US6627974B2 (en) * | 2000-06-19 | 2003-09-30 | Nichia Corporation | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
JP4390640B2 (ja) | 2003-07-31 | 2009-12-24 | シャープ株式会社 | 窒化物半導体レーザ素子、窒化物半導体発光素子、窒化物半導体ウェハおよびそれらの製造方法 |
US9153645B2 (en) * | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US7358107B2 (en) * | 2005-10-27 | 2008-04-15 | Sharp Laboratories Of America, Inc. | Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer |
US9070760B2 (en) * | 2011-03-14 | 2015-06-30 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US10217673B2 (en) * | 2014-12-17 | 2019-02-26 | Intel Corporation | Integrated circuit die having reduced defect group III-nitride structures and methods associated therewith |
-
2018
- 2018-01-31 JP JP2018015982A patent/JP6966343B2/ja active Active
-
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261032A (ja) * | 2000-06-19 | 2002-09-13 | Nichia Chem Ind Ltd | 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子 |
JP2003037066A (ja) * | 2001-05-17 | 2003-02-07 | Nichia Chem Ind Ltd | 窒化物半導体基板、及びその成長方法 |
JP2006315895A (ja) * | 2005-05-11 | 2006-11-24 | Furukawa Co Ltd | Iii族窒化物半導体層の形成方法、iii族窒化物半導体基板の製造方法およびiii族窒化物半導体基板 |
JP2007116097A (ja) * | 2005-09-22 | 2007-05-10 | Sony Corp | 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに窒化物系iii−v族化合物半導体の成長方法ならびに窒化物系iii−v族化合物半導体成長用基板ならびに光源セルユニットならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法 |
JP2011035338A (ja) * | 2009-08-06 | 2011-02-17 | Hitachi Ltd | 半導体受光素子及びその製造方法 |
US20120097975A1 (en) * | 2010-10-26 | 2012-04-26 | Samsung Electronics Co., Ltd. | Nitride-Based Semiconductor Substrates Having Hollow Member Pattern And Methods Of Fabricating The Same |
JP2015097261A (ja) * | 2013-10-11 | 2015-05-21 | パナソニックIpマネジメント株式会社 | 窒化物半導体積層構造、半導体発光素子および窒化物半導体積層構造を製造する方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021131808A1 (ja) * | 2019-12-26 | 2021-07-01 | 京セラ株式会社 | 半導体素子の製造方法及び半導体装置 |
WO2021246527A1 (ja) * | 2020-06-05 | 2021-12-09 | 株式会社Flosfia | 半導体装置の製造方法 |
US11914193B2 (en) | 2021-06-22 | 2024-02-27 | Corning Research & Development Corporation | Optical assembly for coupling with two-dimensionally arrayed waveguides and associated methods |
US11880071B2 (en) | 2021-08-23 | 2024-01-23 | Corning Research & Development Corporation | Optical assembly for interfacing waveguide arrays, and associated methods |
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