JP2019125761A - 不純物導入装置、不純物導入方法及び炭化ケイ素半導体装置の製造方法 - Google Patents
不純物導入装置、不純物導入方法及び炭化ケイ素半導体装置の製造方法 Download PDFInfo
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- JP2019125761A JP2019125761A JP2018007315A JP2018007315A JP2019125761A JP 2019125761 A JP2019125761 A JP 2019125761A JP 2018007315 A JP2018007315 A JP 2018007315A JP 2018007315 A JP2018007315 A JP 2018007315A JP 2019125761 A JP2019125761 A JP 2019125761A
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Abstract
Description
−不純物導入装置−
第1の実施の形態に係る不純物導入装置は、図1に示すように、成膜装置10、光照射装置20、並びに成膜装置10及び光照射装置20に接続された演算制御装置30を備える。
次に図1に示した不純物導入装置を用いて行う第1の実施の形態に係る不純物導入方法を説明する。まず図2のステップS1において図3に示すように、例えば、4H−SiCのn+型の半導体基板1aの上に、n−型の4H−SiCのエピタキシャル成長層2を結晶成長した2層構造の複合構造物(1a,2)を対象物として用意する。対象物の表面層をなすエピタキシャル成長層2は、例えば1×1013〜1×1016/cm3程度の不純物濃度で5〜20μm程度の厚みである。
第1の実施の形態に係る半導体装置の製造方法ではまず、図3で示したようなn+型のSiCの半導体基板1a上にn−型のエピタキシャル成長層2が結晶成長された複合構造物(1a,2)を対象物として用意する。すなわち対象物はSiCの半導体層が2層積層された構造である。そして−不純物導入方法−で説明したような光パルスLnの多段照射及びエネルギー逓増照射を行って、図9に示したような不純物導入領域4aが選択的に形成された試料を作製する。
−半導体装置の製造方法−
第2の実施の形態に係る半導体装置の製造方法は、図16に示すように、最初に用意される対象物が、SiCの半導体層が3層積層された複合構造物(1a,2,7)である点が異なる。複合構造物(1a,2,7)は、n+型のSiCの半導体基板1a上にn−型のエピタキシャル成長層2が結晶成長され、このエピタキシャル成長層2の上にp型のベース層7が設けられて作製されている。第2の実施の形態に係る不純物導入方法及び不純物導入方法に用いる不純物導入装置については、第1の実施の形態の場合と等価であるため、重複説明を省略する。
−半導体装置の製造方法−
第3の実施の形態に係る半導体装置の製造方法は、図19に示すように、SiCの半導体基板の上面上に選択導入マスク(3a〜3d)を設けて半導体装置を製造する点が第1及び第2の実施の形態と異なる。第3の実施の形態に係る半導体装置の製造方法では、選択導入マスク(3a〜3d)の上にAlの不純物源膜4を成膜して不純物導入方法を行う。第3の実施の形態に係る不純物導入方法及び不純物導入方法に用いる不純物導入装置のそれぞれについては、第1の実施の形態の場合と等価であるため、重複説明を省略する。
本発明は上記の開示した実施の形態によって説明したが、この開示の一部をなす論述及び図面は、本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかになると考えられるべきである。
1a 半導体基板
2 エピタキシャル成長層
3a〜3d 第1導入阻止パターン〜第4導入阻止パターン
3e パッシベーション膜
4 不純物源膜
4a 不純物導入領域
4a1〜4a4 半導体領域
4x 反応生成層
4x1〜4x4 反応生成層
5 コンタクトシード層
5a オーミックコンタクト層
6 ステージ
7 ベース層
8 アノード電極膜
9 電極パッド
10 成膜装置
11 チャンバ
12 下部電極
14 ターゲット
15 電源
16 ガス導入バルブ
17 真空ポンプ
20 光照射装置
21 チャンバ
22 光学窓
23 X−Y移動ステージ
24 支持台
25 加熱装置
30 演算制御装置
31 膜厚制御部
32 光源制御部
33 ビーム調整系
34 光源
41 入力装置
42 データ記憶装置
L,Ln 光パルス
Claims (9)
- 炭化ケイ素からなる対象物の表面上に、不純物元素を含む不純物源膜を堆積するステップと、
前記不純物源膜に対して第1の光パルスを照射して、前記対象物の内部に反応生成層を形成するステップと、
前記反応生成層の上の前記不純物源膜に対して、前記第1の光パルスのエネルギー密度より大きなエネルギー密度の第2の光パルスを照射して、前記反応生成層を介して前記対象物の内部に前記不純物元素を導入するステップと、
を含むことを特徴とする不純物導入方法。 - 前記不純物元素は、アルミニウムであることを特徴とする請求項1に記載の不純物導入方法。
- 前記第1の光パルスのエネルギー密度は、1.0J/cm2以上、3.0J/cm2以下であることを特徴とする請求項1又は2に記載の不純物導入方法。
- 前記第2の光パルスのエネルギー密度は、6.0J/cm2以下であることを特徴とする請求項1〜3のいずれか一項に記載の不純物導入方法。
- 前記第1の光パルス及び前記第2の光パルスのそれぞれの波長は、190nmより長波長であることを特徴とする請求項1〜4のいずれか一項に記載の不純物導入方法。
- 前記第1の光パルス及び前記第2の光パルスを照射する処理は、前記対象物を室温以上、500℃以下の状態として行われることを特徴とする請求項1〜5のいずれか一項に記載の不純物導入方法。
- 第1導電型の炭化ケイ素の半導体領域の表面上に、第2導電型を呈する不純物元素を含む不純物源膜を堆積する工程と、
前記不純物源膜に対して第1の光パルスを照射して、前記半導体領域の内部に反応生成層を形成する工程と、
前記反応生成層の上の前記不純物源膜に対して、前記第1の光パルスのエネルギー密度より大きなエネルギー密度の第2の光パルスを照射して、前記反応生成層を介して前記半導体領域の内部に前記不純物元素を導入することにより、第2導電型の不純物導入領域を設けてpn接合を含む素子構造を形成する工程と、
を含むことを特徴とする炭化ケイ素半導体装置の製造方法。 - 光パルスを出射する光源と、
前記光源に接続され前記光パルスのエネルギー密度を制御する光源制御部と、
不純物元素を含む不純物源膜を表面上に堆積した、炭化ケイ素からなる対象物に前記光パルスを照射するビーム調整系と、
を備え、
前記光源制御部は、前記対象物の内部に反応生成層を形成するように前記不純物源膜に対して第1の光パルスを照射し、前記反応生成層の上の前記不純物源膜に対して前記第1の光パルスのエネルギー密度より大きなエネルギー密度の第2の光パルスを照射するように制御して、前記反応生成層を介して前記対象物の内部に前記不純物元素を導入することを特徴とする不純物導入装置。 - 前記対象物の表面上に、前記不純物源膜を堆積する成膜装置を更に備えることを特徴とする請求項8に記載の不純物導入装置。
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