JP2017199807A - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 116
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 70
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 63
- 239000007769 metal material Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 39
- 239000010410 layer Substances 0.000 description 34
- 238000005224 laser annealing Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 9
- 238000000921 elemental analysis Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018098 Ni-Si Inorganic materials 0.000 description 1
- 229910018529 Ni—Si Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
以下、本発明を図に示す実施形態について説明する。まず、図1を参照して、本実施形態にかかるSiC半導体装置について説明する。本実施形態では、縦型の半導体素子としてのプレーナ型の縦型パワーMOSFETを備えるSiC半導体装置について説明する。本SiC半導体装置は、例えばインバータに適用すると好適なものである。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
1b 裏面
10 ソース電極
11 ドレイン電極
11a Niシリサイド
11b Moカーバイド
50 レーザ光
110 金属薄膜
110a 第1金属材料
110b 第2金属材料
Claims (8)
- 表面(1a)および裏面(1b)を有し、炭化珪素で構成された半導体基板(1)と、該半導体基板の前記表面もしくは前記裏面に対してオーミック接合させられたオーミック電極(11)とを有する炭化珪素半導体装置であって、
前記オーミック電極は、金属シリサイド(11a)と金属カーバイド(11b)を含み、ブロック状で構成された前記金属カーバイドの周囲を前記金属シリサイドが囲んでおり、前記半導体基板と前記金属カーバイドとの間に前記金属シリサイドが配置されている炭化珪素半導体装置。 - 前記金属カーバイドは結晶性を有している請求項1に記載の炭化珪素半導体装置。
- 前記金属シリサイドは非晶質である請求項1または2に記載の炭化珪素半導体装置。
- ブロック状で構成された前記金属カーバイドの各ブロックは、最大寸法が3nm以上かつ40nm以下となっている請求項1ないし3のいずれか1つに記載の炭化珪素半導体装置。
- 前記金属シリサイドのうち前記半導体基板と前記金属カーバイドとの間に位置する部分の厚みは1nm以上かつ3nm以下となっている請求項1ないし4のいずれか1つに記載の炭化珪素半導体装置。
- 前記金属シリサイドはNiシリサイド(11a)を含み、前記金属カーバイドはMoカーバイド(11b)を含んでいる請求項1ないし5のいずれか1つに記載の炭化珪素半導体装置。
- 表面(1a)および裏面(1b)を有し、炭化珪素で構成された半導体基板(1)の前記表面もしくは前記裏面に対してオーミック接合させられるオーミック電極(11)を形成する炭化珪素半導体装置の製造方法であって、
金属シリサイド(11a)を生成する金属元素を含む第1金属材料(110a)と金属カーバイド(11b)を生成する金属元素を含む第2金属材料(110b)とを用いて、前記半導体基板の前記表面もしくは前記裏面に対して、前記第1金属材料と前記第2金属材料とを成膜することと、
前記第1金属材料と前記第2金属材料に対してエネルギー密度が1.4J/cm2以上のレーザ光(50)を照射することによって、前記第2金属材料に含まれる金属元素と炭化珪素中の炭素とによってブロック状の金属カーバイドを生成すると共に、前記第1金属材料に含まれる金属元素と炭化珪素中の珪素とによって前記金属カーバイドの周囲を囲みつつ、前記半導体基板と前記金属カーバイドとの間に配置されるように前記金属シリサイドを形成することと、を含んでいる炭化珪素半導体装置の製造方法。 - 前記レーザ光のエネルギー密度を2.0J/cm2以下とする請求項7に記載の炭化珪素半導体装置の製造方法。
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JP2016089578A JP6540585B2 (ja) | 2016-04-27 | 2016-04-27 | 炭化珪素半導体装置およびその製造方法 |
PCT/JP2017/007590 WO2017187760A1 (ja) | 2016-04-27 | 2017-02-28 | 炭化珪素半導体装置およびその製造方法 |
US15/772,125 US10361274B2 (en) | 2016-04-27 | 2017-02-28 | Silicon carbide semiconductor device having metal silicide surrounds a peripheral of metal carbide |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332358A (ja) * | 2005-05-26 | 2006-12-07 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2010205824A (ja) * | 2009-03-02 | 2010-09-16 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP2012222074A (ja) * | 2011-04-06 | 2012-11-12 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置の電極形成方法 |
JP2014078732A (ja) * | 2008-06-02 | 2014-05-01 | Fuji Electric Co Ltd | 炭化珪素半導体装置の製造方法 |
JP2016046448A (ja) * | 2014-08-26 | 2016-04-04 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP2016046311A (ja) * | 2014-08-20 | 2016-04-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5352954B2 (ja) | 2006-11-22 | 2013-11-27 | 日産自動車株式会社 | 電極膜/炭化珪素構造体 |
JP2017168681A (ja) * | 2016-03-16 | 2017-09-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332358A (ja) * | 2005-05-26 | 2006-12-07 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2014078732A (ja) * | 2008-06-02 | 2014-05-01 | Fuji Electric Co Ltd | 炭化珪素半導体装置の製造方法 |
JP2010205824A (ja) * | 2009-03-02 | 2010-09-16 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP2012222074A (ja) * | 2011-04-06 | 2012-11-12 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置の電極形成方法 |
JP2016046311A (ja) * | 2014-08-20 | 2016-04-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2016046448A (ja) * | 2014-08-26 | 2016-04-04 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
Cited By (16)
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CN110797260A (zh) * | 2018-08-02 | 2020-02-14 | 半导体组件工业公司 | 用于碳化硅功率半导体器件上的背侧欧姆接触的碳受控欧姆接触层 |
CN109524456A (zh) * | 2018-11-19 | 2019-03-26 | 中国电子科技集团公司第十三研究所 | 适用于高温的碳化硅欧姆接触制作方法及碳化硅功率器件 |
US11081564B2 (en) | 2019-02-07 | 2021-08-03 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP7101147B2 (ja) | 2019-08-02 | 2022-07-14 | 株式会社豊田中央研究所 | 半導体装置 |
JP2021027114A (ja) * | 2019-08-02 | 2021-02-22 | 株式会社豊田中央研究所 | 半導体素子およびその製造方法 |
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JP2023518744A (ja) * | 2020-03-20 | 2023-05-08 | ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | 炭化ケイ素基板の結晶学的c面でオーミック接触を生成するための方法およびオーミック接触 |
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