JP2019104946A - 蒸着源、電子ビーム真空蒸着装置及び電子デバイスの製造方法 - Google Patents
蒸着源、電子ビーム真空蒸着装置及び電子デバイスの製造方法 Download PDFInfo
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- JP2019104946A JP2019104946A JP2017236424A JP2017236424A JP2019104946A JP 2019104946 A JP2019104946 A JP 2019104946A JP 2017236424 A JP2017236424 A JP 2017236424A JP 2017236424 A JP2017236424 A JP 2017236424A JP 2019104946 A JP2019104946 A JP 2019104946A
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- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical class C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、一形態に係る蒸着源を備える電子ビーム真空蒸着装置の模式図である。図1に示した真空蒸着装置10は、真空蒸着室12と、蒸着源14と、電子銃16と、を備えており、電子ビームEBを利用して真空蒸着を行う電子ビーム真空蒸着装置である。図1では、説明のために、真空蒸着装置10によって成膜層4が形成される帯状の被成膜基板2も図示している。
第2の実施形態として、第1の実施形態で説明した蒸着源14を用いた有機ELデバイス(電子デバイス)26の製造方法を説明する。以下では、断らない限り、ボトムエミッション型の有機ELデバイス26を説明するが、有機ELデバイス26はトップエミッション型のものでもよい。
支持基板28は、可視光(波長400nm〜800nmの光)に対して透光性を有する。支持基板28の厚さは、例えば、30μm〜500μmであり、フィルム状を呈し得る。支持基板28が樹脂の場合は、例えばロールツーロール方式で連続搬送する際の基板ヨレ、シワ、及び伸びを防止する観点からは45μm以上、可撓性の観点からは125μm以下が好ましい。
陽極層30は、支持基板28上に設けられている。陽極層30には、透光性を有する電極層が用いられる。透光性を有する電極としては、電気伝導度の高い金属酸化物、金属硫化物及び金属等の薄膜を用いることができ、光透過率の高い薄膜が好適に用いられる。例えば酸化インジウム、酸化亜鉛、酸化スズ、インジウム錫酸化物(Indium Tin Oxide:略称ITO)、インジウム亜鉛酸化物(Indium Zinc Oxide:略称IZO)、金、白金、銀、銅等からなる薄膜が用いられ、これらの中でもITO、IZO、又は酸化スズからなる薄膜が好適に用いられる。陽極層30として、ポリアニリン及びその誘導体、ポリチオフェン及びその誘導体等の有機物の透明導電膜を用いてもよい。陽極層30は、導電体(例えば金属)からなるネットワーク構造を有してもよい。
有機EL部32は、陽極層30及び陰極層34に印加された電圧に応じて、電荷の移動及び電荷の再結合などの有機ELデバイス26の発光に寄与する機能部であり、発光層を有する。
色素系材料としては、例えば、シクロペンダミン誘導体、テトラフェニルブタジエン誘導体化合物、トリフェニルアミン誘導体、オキサジアゾール誘導体、ピラゾロキノリン誘導体、ジスチリルベンゼン誘導体、ジスチリルアリーレン誘導体、ピロール誘導体、チオフェン環化合物、ピリジン環化合物、ペリノン誘導体、ペリレン誘導体、オリゴチオフェン誘導体、オキサジアゾールダイマー、ピラゾリンダイマー、キナクリドン誘導体、クマリン誘導体などが挙げられる。
金属錯体系材料としては、例えばTb、Eu、Dyなどの希土類金属、又はAl、Zn、Be、Ir、Ptなどを中心金属に有し、オキサジアゾール、チアジアゾール、フェニルピリジン、フェニルベンゾイミダゾール、キノリン構造などを配位子に有する金属錯体が挙げられ、例えばイリジウム錯体、白金錯体などの三重項励起状態からの発光を有する金属錯体、アルミニウムキノリノール錯体、ベンゾキノリノールベリリウム錯体、ベンゾオキサゾリル亜鉛錯体、ベンゾチアゾール亜鉛錯体、アゾメチル亜鉛錯体、ポルフィリン亜鉛錯体、フェナントロリンユーロピウム錯体などが挙げられる。
高分子系材料としては、ポリパラフェニレンビニレン誘導体、ポリチオフェン誘導体、ポリパラフェニレン誘導体、ポリシラン誘導体、ポリアセチレン誘導体、ポリフルオレン誘導体、ポリビニルカルバゾール誘導体、上記色素系材料や金属錯体系発光材料を高分子化したものなどが挙げられる。
ドーパント材料としては、例えばペリレン誘導体、クマリン誘導体、ルブレン誘導体、キナクリドン誘導体、スクアリウム誘導体、ポルフィリン誘導体、スチリル系色素、テトラセン誘導体、ピラゾロン誘導体、デカシクレン、フェノキサゾンなどが挙げられる。
(a)(陽極層)/発光層/(陰極層)
(b)(陽極層)/正孔注入層/発光層/(陰極層)
(c)(陽極層)/正孔注入層/発光層/電子注入層/(陰極層)
(d)(陽極層)/正孔注入層/発光層/電子輸送層/電子注入層/(陰極層)
(e)(陽極層)/正孔注入層/正孔輸送層/発光層/(陰極層)
(f)(陽極層)/正孔注入層/正孔輸送層/発光層/電子注入層/(陰極層)
(g)(陽極層)/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/(陰極層)
(h)(陽極層)/発光層/電子注入層/(陰極層)
(i)(陽極層)/発光層/電子輸送層/電子注入層/(陰極層)
記号「/」は、記号「/」の両側の層同士が接合していることを意味している。
陰極層34は、有機EL部32上に設けられる。陰極層34は、陽極層30のうち有機EL部32から露出している部分と反対側において、支持基板28に接するように設けられ得る。陰極層34は、2層以上が積層された積層構造を有してもよい。
Claims (10)
- 電子ビームの照射により加熱蒸発する蒸着材料を収容する坩堝と、
前記坩堝の開口側の縁部を取り囲むように配置されたヒータと、
を備える、蒸着源。 - 前記ヒータの前記縁部側の面の少なくとも一部が平面状である、
請求項1に記載の蒸着源。 - 前記ヒータが、前記坩堝の外側面も取り囲んでおり、
前記ヒータは、前記坩堝から前記ヒータ側に飛散してきた前記蒸着材料を、前記坩堝の軸線方向において前記坩堝の底部からみて前記開口側に飛散させるように、前記縁部及び前記外側面と離間して配置されている、
請求項1又は2に記載の蒸着源。 - 前記ヒータは、前記縁部の側方に位置する第1加熱領域と、前記第1加熱領域より、前記坩堝の軸線方向において前記底部側に位置する第2加熱領域とを有し、
前記第1加熱領域は、前記第1加熱領域における前記第2加熱領域に近い一方の領域と前記坩堝の前記軸線との間の距離が、前記第1加熱領域における他方の領域と前記坩堝の前記軸線との間の距離と同じ、又は前記第1加熱領域における他方の領域と前記坩堝の前記軸線との間の距離より短くなるように配置されており、
前記第2加熱領域は、前記第2加熱領域における前記第1加熱領域に近い一方の領域と前記坩堝の前記外側面との間の距離が、前記第2加熱領域における他方の領域と前記坩堝の前記外側面との間の距離と同じ、又は前記第2加熱領域における他方の領域と前記坩堝の前記外側面との間の距離より長くなるように配置されている、
請求項3に記載の蒸着源。 - 前記坩堝の軸線方向において、前記坩堝の底部から最も遠い側の前記ヒータの縁部が、前記坩堝の前記軸線方向において、前記坩堝の前記縁部より前記底部から遠い側に位置している、
請求項1〜4の何れか一項に記載の蒸着源。 - 前記蒸着材料がアルミニウムである、
請求項1〜5の何れか一項に記載の蒸着源。 - 前記坩堝の材料が、熱分解窒化ホウ素、熱分解グラファイト、熱分解炭化珪素、熱分解窒化珪素、熱分解窒化アルミニウム、酸化アルミニウム、窒化ホウ素、窒化アルミニウム、シリコンカーバイド及びグラファイトのうちの少なくとも一つを含む、
請求項1〜6の何れか一項に記載の蒸着源。 - 請求項1〜7の何れか一項に記載の蒸着源を備えた、電子ビーム真空蒸着装置。
- 支持基板上に、第1電極層、デバイス機能部及び第2電極層を順に形成することによって製造される電子デバイスの製造方法であって、
前記第1電極層を形成する工程及び前記第2電極層を形成する工程のうち少なくとも一方が、請求項1〜7の何れか一項に記載の蒸着源を用いた真空蒸着法で成膜層を形成する成膜層形成工程を含む、
電子デバイスの製造方法。 - 前記支持基板が長尺であって可撓性を有し、
前記成膜層形成工程では、前記支持基板を連続搬送しながら、前記成膜層を形成する、
請求項9に記載の電子デバイスの製造方法。
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JP6982695B2 (ja) * | 2019-09-09 | 2021-12-17 | 株式会社アルバック | 蒸着源及び真空処理装置 |
KR102319130B1 (ko) * | 2020-03-11 | 2021-10-29 | 티오에스주식회사 | 가변 온도조절 장치를 구비한 금속-산화물 전자빔 증발원 |
KR102336228B1 (ko) * | 2020-04-06 | 2021-12-09 | 티오에스주식회사 | 챔버 분리형 에피 성장 장치 |
CN112267096A (zh) * | 2020-10-26 | 2021-01-26 | 天长市石峰玻璃有限公司 | 一种可提高镀膜均匀度的镀膜装置 |
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US20200377991A1 (en) | 2020-12-03 |
EP3722453A4 (en) | 2021-08-25 |
TW201930622A (zh) | 2019-08-01 |
WO2019111901A1 (ja) | 2019-06-13 |
JP7058499B2 (ja) | 2022-04-22 |
EP3722453A1 (en) | 2020-10-14 |
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