JP2019102638A5 - - Google Patents
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- JP2019102638A5 JP2019102638A5 JP2017231776A JP2017231776A JP2019102638A5 JP 2019102638 A5 JP2019102638 A5 JP 2019102638A5 JP 2017231776 A JP2017231776 A JP 2017231776A JP 2017231776 A JP2017231776 A JP 2017231776A JP 2019102638 A5 JP2019102638 A5 JP 2019102638A5
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- support surface
- frequency power
- ring
- focus ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 description 3
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017231776A JP7033441B2 (ja) | 2017-12-01 | 2017-12-01 | プラズマ処理装置 |
| TW107141998A TWI803539B (zh) | 2017-12-01 | 2018-11-26 | 支持組件及支持組件之組裝方法 |
| CN201811434243.0A CN109872939B (zh) | 2017-12-01 | 2018-11-28 | 支承组件和支承组件的组装方法 |
| KR1020180150530A KR102603893B1 (ko) | 2017-12-01 | 2018-11-29 | 플라즈마 처리 장치 |
| US16/206,100 US11201038B2 (en) | 2017-12-01 | 2018-11-30 | Support assembly and support assembly assembling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017231776A JP7033441B2 (ja) | 2017-12-01 | 2017-12-01 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019102638A JP2019102638A (ja) | 2019-06-24 |
| JP2019102638A5 true JP2019102638A5 (https=) | 2020-10-08 |
| JP7033441B2 JP7033441B2 (ja) | 2022-03-10 |
Family
ID=66659508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017231776A Active JP7033441B2 (ja) | 2017-12-01 | 2017-12-01 | プラズマ処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11201038B2 (https=) |
| JP (1) | JP7033441B2 (https=) |
| KR (1) | KR102603893B1 (https=) |
| CN (1) | CN109872939B (https=) |
| TW (1) | TWI803539B (https=) |
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| JP6888007B2 (ja) | 2016-01-26 | 2021-06-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウェハエッジリングの持ち上げに関する解決 |
| CN108369922B (zh) | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| US10847347B2 (en) | 2018-08-23 | 2020-11-24 | Applied Materials, Inc. | Edge ring assembly for a substrate support in a plasma processing chamber |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US10784089B2 (en) | 2019-02-01 | 2020-09-22 | Applied Materials, Inc. | Temperature and bias control of edge ring |
| US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
| KR102726757B1 (ko) * | 2019-12-24 | 2024-11-08 | 주식회사 제우스 | 기판 처리장치 |
| JP7330115B2 (ja) * | 2020-02-07 | 2023-08-21 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US11668553B2 (en) | 2020-02-14 | 2023-06-06 | Applied Materials Inc. | Apparatus and method for controlling edge ring variation |
| JP7454961B2 (ja) * | 2020-03-05 | 2024-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| KR102751528B1 (ko) | 2020-09-01 | 2025-01-07 | 삼성전자주식회사 | 플라즈마 공정 장비 |
| JP7489896B2 (ja) * | 2020-10-22 | 2024-05-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| CN115398602B (zh) * | 2021-03-24 | 2025-02-21 | 株式会社日立高新技术 | 等离子处理装置以及等离子处理方法 |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12525433B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| KR102896325B1 (ko) * | 2021-11-09 | 2025-12-08 | 삼성전자주식회사 | 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법 |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| US12562351B2 (en) | 2024-01-30 | 2026-02-24 | Applied Materials, Inc. | Extreme edge sheath tunability with non-movable edge ring |
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| JP4559595B2 (ja) * | 2000-07-17 | 2010-10-06 | 東京エレクトロン株式会社 | 被処理体の載置装置及びプラズマ処理装置 |
| JP4419474B2 (ja) * | 2002-08-27 | 2010-02-24 | Jsr株式会社 | 異方導電性シートおよびインピーダンス測定用プローブ |
| US7662723B2 (en) * | 2005-12-13 | 2010-02-16 | Lam Research Corporation | Methods and apparatus for in-situ substrate processing |
| JP5281309B2 (ja) | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置,プラズマ処理方法,プログラム |
| JP5357639B2 (ja) * | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP5563347B2 (ja) * | 2010-03-30 | 2014-07-30 | 東京エレクトロン株式会社 | プラズマ処理装置及び半導体装置の製造方法 |
| JP5584517B2 (ja) * | 2010-05-12 | 2014-09-03 | 東京エレクトロン株式会社 | プラズマ処理装置及び半導体装置の製造方法 |
| WO2012056807A1 (ja) * | 2010-10-25 | 2012-05-03 | 日本碍子株式会社 | セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材 |
| JP5741124B2 (ja) * | 2011-03-29 | 2015-07-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2013078420A2 (en) * | 2011-11-24 | 2013-05-30 | Lam Research Corporation | Symmetric rf return path liner |
| JP5970268B2 (ja) * | 2012-07-06 | 2016-08-17 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および処理方法 |
| JP5982206B2 (ja) * | 2012-07-17 | 2016-08-31 | 東京エレクトロン株式会社 | 下部電極、及びプラズマ処理装置 |
| JP5602282B2 (ja) * | 2013-06-06 | 2014-10-08 | 東京エレクトロン株式会社 | プラズマ処理装置およびフォーカスリングとフォーカスリング部品 |
| JP6219229B2 (ja) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構 |
| US10163610B2 (en) * | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
| CN108140606B (zh) * | 2015-10-21 | 2022-05-24 | 住友大阪水泥股份有限公司 | 静电卡盘装置 |
| US10062599B2 (en) * | 2015-10-22 | 2018-08-28 | Lam Research Corporation | Automated replacement of consumable parts using interfacing chambers |
| US9852889B1 (en) * | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
| JP2018006299A (ja) * | 2016-07-08 | 2018-01-11 | 東芝メモリ株式会社 | プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法 |
| US20180061696A1 (en) * | 2016-08-23 | 2018-03-01 | Applied Materials, Inc. | Edge ring or process kit for semiconductor process module |
| US20190119815A1 (en) * | 2017-10-24 | 2019-04-25 | Applied Materials, Inc. | Systems and processes for plasma filtering |
-
2017
- 2017-12-01 JP JP2017231776A patent/JP7033441B2/ja active Active
-
2018
- 2018-11-26 TW TW107141998A patent/TWI803539B/zh active
- 2018-11-28 CN CN201811434243.0A patent/CN109872939B/zh active Active
- 2018-11-29 KR KR1020180150530A patent/KR102603893B1/ko active Active
- 2018-11-30 US US16/206,100 patent/US11201038B2/en active Active
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