JP2019102638A5 - - Google Patents

Download PDF

Info

Publication number
JP2019102638A5
JP2019102638A5 JP2017231776A JP2017231776A JP2019102638A5 JP 2019102638 A5 JP2019102638 A5 JP 2019102638A5 JP 2017231776 A JP2017231776 A JP 2017231776A JP 2017231776 A JP2017231776 A JP 2017231776A JP 2019102638 A5 JP2019102638 A5 JP 2019102638A5
Authority
JP
Japan
Prior art keywords
high frequency
support surface
frequency power
ring
focus ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017231776A
Other languages
English (en)
Japanese (ja)
Other versions
JP7033441B2 (ja
JP2019102638A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2017231776A external-priority patent/JP7033441B2/ja
Priority to JP2017231776A priority Critical patent/JP7033441B2/ja
Priority to TW107141998A priority patent/TWI803539B/zh
Priority to CN201811434243.0A priority patent/CN109872939B/zh
Priority to KR1020180150530A priority patent/KR102603893B1/ko
Priority to US16/206,100 priority patent/US11201038B2/en
Publication of JP2019102638A publication Critical patent/JP2019102638A/ja
Publication of JP2019102638A5 publication Critical patent/JP2019102638A5/ja
Publication of JP7033441B2 publication Critical patent/JP7033441B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017231776A 2017-12-01 2017-12-01 プラズマ処理装置 Active JP7033441B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017231776A JP7033441B2 (ja) 2017-12-01 2017-12-01 プラズマ処理装置
TW107141998A TWI803539B (zh) 2017-12-01 2018-11-26 支持組件及支持組件之組裝方法
CN201811434243.0A CN109872939B (zh) 2017-12-01 2018-11-28 支承组件和支承组件的组装方法
KR1020180150530A KR102603893B1 (ko) 2017-12-01 2018-11-29 플라즈마 처리 장치
US16/206,100 US11201038B2 (en) 2017-12-01 2018-11-30 Support assembly and support assembly assembling method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017231776A JP7033441B2 (ja) 2017-12-01 2017-12-01 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2019102638A JP2019102638A (ja) 2019-06-24
JP2019102638A5 true JP2019102638A5 (https=) 2020-10-08
JP7033441B2 JP7033441B2 (ja) 2022-03-10

Family

ID=66659508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017231776A Active JP7033441B2 (ja) 2017-12-01 2017-12-01 プラズマ処理装置

Country Status (5)

Country Link
US (1) US11201038B2 (https=)
JP (1) JP7033441B2 (https=)
KR (1) KR102603893B1 (https=)
CN (1) CN109872939B (https=)
TW (1) TWI803539B (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6888007B2 (ja) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated ウェハエッジリングの持ち上げに関する解決
CN108369922B (zh) 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US10847347B2 (en) 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US10784089B2 (en) 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
KR102726757B1 (ko) * 2019-12-24 2024-11-08 주식회사 제우스 기판 처리장치
JP7330115B2 (ja) * 2020-02-07 2023-08-21 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US11668553B2 (en) 2020-02-14 2023-06-06 Applied Materials Inc. Apparatus and method for controlling edge ring variation
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
KR102751528B1 (ko) 2020-09-01 2025-01-07 삼성전자주식회사 플라즈마 공정 장비
JP7489896B2 (ja) * 2020-10-22 2024-05-24 東京エレクトロン株式会社 プラズマ処理装置
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
CN115398602B (zh) * 2021-03-24 2025-02-21 株式会社日立高新技术 等离子处理装置以及等离子处理方法
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
KR102896325B1 (ko) * 2021-11-09 2025-12-08 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US12562351B2 (en) 2024-01-30 2026-02-24 Applied Materials, Inc. Extreme edge sheath tunability with non-movable edge ring

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4559595B2 (ja) * 2000-07-17 2010-10-06 東京エレクトロン株式会社 被処理体の載置装置及びプラズマ処理装置
JP4419474B2 (ja) * 2002-08-27 2010-02-24 Jsr株式会社 異方導電性シートおよびインピーダンス測定用プローブ
US7662723B2 (en) * 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
JP5281309B2 (ja) 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置,プラズマ処理方法,プログラム
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5563347B2 (ja) * 2010-03-30 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
JP5584517B2 (ja) * 2010-05-12 2014-09-03 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
WO2012056807A1 (ja) * 2010-10-25 2012-05-03 日本碍子株式会社 セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
WO2013078420A2 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Symmetric rf return path liner
JP5970268B2 (ja) * 2012-07-06 2016-08-17 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP5982206B2 (ja) * 2012-07-17 2016-08-31 東京エレクトロン株式会社 下部電極、及びプラズマ処理装置
JP5602282B2 (ja) * 2013-06-06 2014-10-08 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
CN108140606B (zh) * 2015-10-21 2022-05-24 住友大阪水泥股份有限公司 静电卡盘装置
US10062599B2 (en) * 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering

Similar Documents

Publication Publication Date Title
JP2019102638A5 (https=)
JP2024160333A5 (https=)
TW201947660A (zh) 用於基座的射頻(rf)接地配置
RU2017134819A (ru) Монолитная пластина с электрическими контактами
US10284986B2 (en) Piezoelectric speaker and method for forming the same
MY178889A (en) Monolithic plane with electrical contacts and methods for manufacturing the same
JP2017228558A5 (https=)
JPWO2018163935A1 (ja) ウエハ支持台
JP2015002209A5 (https=)
JP2020107881A5 (https=)
JP2015517225A5 (https=)
JP2017516428A5 (https=)
JP2020077786A5 (https=)
JP2017085089A5 (https=)
JP2015225952A5 (https=)
JP2020077785A5 (https=)
WO2013022306A3 (ko) 플라즈마 발생장치, 플라즈마 발생장치용 회전 전극의 제조방법, 기판의 플라즈마 처리방법, 및 플라즈마를 이용한 혼합 구조의 박막 형성방법
WO2020126768A3 (en) Stage apparatus
CN104362884A (zh) 一种基于振动摩擦的多方向宽频能量收集装置
JP2011009249A5 (https=)
JP2017122739A5 (https=)
JP2020077654A5 (https=)
WO2020239221A8 (en) Integrated component and power switching device
US20170004925A1 (en) Power delivery systems and manufacturing equipment including a variable vacuum capacitor
WO2011132903A3 (ko) 플라즈마 처리 장치